SLVSB43C November 2011 – February 2016 TPS54427
PRODUCTION DATA.
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Input voltage | VIN, EN | –0.3 | 20 | V |
| VBST | –0.3 | 26 | V | |
| VBST (10 ns transient) | –0.3 | 28 | V | |
| VBST (vs SW) | –0.3 | 6.5 | V | |
| VFB, SS | –0.3 | 6.5 | V | |
| SW | –2 | 20 | V | |
| SW (10 ns transient) | –3 | 22 | V | |
| Output voltage | VREG5 | –0.3 | 6.5 | V |
| GND | –0.3 | 0.3 | V | |
| Voltage from GND to thermal pad, Vdiff | –0.2 | 0.2 | V | |
| Operating junction temperature, TJ | –40 | 150 | °C | |
| Storage temperature, Tstg | –55 | 150 | °C | |
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
| THERMAL METRIC(1) | TPS54427 | UNIT | ||
|---|---|---|---|---|
| DDA [SO PowerPAD] | DRC [VSON] | |||
| 8 PINS | 10 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 42.1 | 43.2 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 50.9 | 53.8 | °C/W |
| RθJB | Junction-to-board thermal resistance | 31.8 | 18.2 | °C/W |
| ψJT | Junction-to-top characterization parameter | 5 | 0.6 | °C/W |
| ψJB | Junction-to-board characterization parameter | 13.5 | 18.3 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 7.1 | 4.7 | °C/W |
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY CURRENT | ||||||
| IVIN | Operating - non-switching supply current | VIN current, TA = 25°C, EN = 5 V, VFB = 0.8 V |
950 | 1400 | μA | |
| IVINSDN | Shutdown supply current | VIN current, TA = 25°C, EN = 0 V | 3.0 | 10 | μA | |
| LOGIC THRESHOLD | ||||||
| VENH | EN high-level input voltage | EN | 1.6 | V | ||
| VENL | EN low-level input voltage | EN | 0.6 | V | ||
| REN | EN pin resistance to GND | VEN = 12 V | 225 | 450 | 900 | kΩ |
| VFB VOLTAGE AND DISCHARGE RESISTANCE | ||||||
| VFBTH | VFB threshold voltage | TA = 25°C, VO = 1.05 V, continuous mode mode | 757 | 765 | 773 | mV |
| TA = –40°C to 85°C, VO = 1.05 V, continuous mode mode(1) |
751 | 765 | 779 | |||
| IVFB | VFB input current | VFB = 0.8 V, TA = 25°C | 0 | ±0.1 | μA | |
| VREG5 OUTPUT | ||||||
| VVREG5 | VREG5 output voltage | TA = 25°C, 6.0 V < VIN < 18 V, 0 < IVREG5 < 5 mA |
5.2 | 5.5 | 5.7 | V |
| VLN5 | Line regulation | 6 V < VIN < 18 V, IVREG5 = 5 mA | 25 | mV | ||
| VLD5 | Load regulation | 0 mA < IVREG5 < 5 mA | 100 | mV | ||
| IVREG5 | Output current | VIN = 6 V, VREG5 = 4.0 V, TA = 25°C | 60 | mA | ||
| MOSFET | ||||||
| RDS(on)h | High side switch resistance (DDA) | 25°C, VBST - SW = 5.5 V | 70 | mΩ | ||
| High side switch resistance (DRC) | 74 | |||||
| RDS(on)l | Low side switch resistance | 25°C | 53 | mΩ | ||
| CURRENT LIMIT | ||||||
| Iocl | Current limit | L out = 1.5 µH (1) | 4.6 | 5.3 | 6.8 | A |
| THERMAL SHUTDOWN | ||||||
| TSDN | Thermal shutdown threshold | Shutdown temperature(1) | 170 | °C | ||
| Hysteresis(1) | 35 | |||||
| ON-TIME TIMER CONTROL | ||||||
| tON | On time | VIN = 12 V, VO = 1.05 V | 150 | ns | ||
| tOFF(MIN) | Minimum off time | TA = 25°C, VFB = 0.7 V | 260 | 310 | ns | |
| SOFT START | ||||||
| ISSC | SS charge current | VSS = 1 V | 4.2 | 6.0 | 7.8 | μA |
| ISSD | SS discharge current | VSS = 0.5 V | 0.1 | 0.2 | mA | |
| UVLO | ||||||
| UVLO | UVLO threshold | Wake up VREG5 voltage | 3.45 | 3.75 | 4.05 | V |
| Hysteresis VREG5 voltage | 0.19 | 0.32 | 0.45 | |||
Figure 1. VIN Current vs Junction Temperature
Figure 3. EN Current vs EN Voltage
Figure 5. 1.05-V Output Voltage vs Vin Voltage
Figure 7. Switching Frequency vs Input Voltage
Figure 2. VIN Shutdown Current vs Junction Temperature
Figure 4. 1.05-V Output Voltage vs Output Current
Figure 6. Efficiency vs Output Current
Figure 8. Switching Frequency vs Output Current