ZHCS625B DECEMBER   2011  – February 2019 TPS53219A

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Enable and Soft-Start
      2. 7.3.2  Adaptive ON-Time D-CAP Control and Frequency Selection
      3. 7.3.3  Small Signal Model
      4. 7.3.4  Ramp Signal
      5. 7.3.5  Adaptive Zero Crossing
      6. 7.3.6  Output Discharge Control
      7. 7.3.7  Low-Side Driver
      8. 7.3.8  High-Side Driver
      9. 7.3.9  Power Good
      10. 7.3.10 Current Sense and Overcurrent Protection
      11. 7.3.11 Overvoltage and Undervoltage Protection
      12. 7.3.12 UVLO Protection
      13. 7.3.13 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Light Load Condition in Auto-Skip Operation
      2. 7.4.2 Forced Continuous Conduction Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Typical Application With Power Block
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 External Components Selection
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Typical Application With Ceramic Output Capacitors
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 External Parts Selection With All Ceramic Output Capacitors
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 接收文档更新通知
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 术语表
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.3.7 Low-Side Driver

The low-side driver is designed to drive high-current low-RDS(on) N-channel MOSFETs. The drive capability is represented by its internal resistance, which is 1.0 Ω for VDRV to DRVL and 0.5 Ω for DRVL to GND. A dead time to prevent shoot through is internally generated between high-side MOSFET off to low-side MOSFET on, and low-side MOSFET off to high-side MOSFET on. The bias voltage VDRV can be delivered from 6.2-V VREG supply or from external power source from 4.5 V to 6.5 V. The instantaneous drive current is supplied by an input capacitor connected between the VDRV and PGND pins.

The average low-side gate drive current is calculated in Equation 3.

Equation 3. TPS53219A q_igl_lusaa0.gif

When VDRV is supplied by external voltage source, the device continues to be supplied by the VREG pin. There is no internal connection from VDRV to VREG.