ZHCSE34A August   2015  – August 2015

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
  4. 修订历史记录
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 GND
      2. 8.3.2 VIN
      3. 8.3.3 dV/dT
      4. 8.3.4 EN/UVLO
      5. 8.3.5 ILIM
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Simple eFuse Protection for Set Top Boxes
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Step by Step Design Procedure
          2. 9.2.1.2.2 Programming the Current-Limit Threshold: RILIM Selection
          3. 9.2.1.2.3 Undervoltage Lockout Set Point
          4. 9.2.1.2.4 Setting Output Voltage Ramp Time (TdVdT)
            1. 9.2.1.2.4.1 Case 1: Start-Up without Load: Only Output Capacitance COUT Draws Current During Start-Up
            2. 9.2.1.2.4.2 Case 2: Start-Up with Load: Output Capacitance COUT and Load Draws Current During Start-Up
          5. 9.2.1.2.5 Support Component Selection - CVIN
        3. 9.2.1.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 Output Short-Circuit Measurements
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 相关链接
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

9.1 Application Information

The TPA25925x/6x is a smart eFuse. It is typically used for Hot-Swap and Power rail protection applications. It operates from 4.5 V to 18 V with programmable current limit and undervoltage protection. The device aids in controlling the in-rush current and provides precise current limiting during overload conditions for systems such as Set-Top-Box, DTVs, Gaming Consoles, SSDs/HDDs and Smart Meters. The device also provides robust protection for multiple faults on the sub-system rail.

The following design procedure can be used to select component values for the device.

Alternatively, the WEBENCH® software may be used to generate a complete design. The WEBENCH® software uses an iterative design procedure and accesses a comprehensive database of components when generating a design. Additionally, a spreadsheet design tool TPS2592xx Design Calculator (SLUC570) is available on web folder.

This section presents a simplified discussion of the design process.

9.2 Typical Application

9.2.1 Simple eFuse Protection for Set Top Boxes

TPS259250 TPS259251 TPS259260 TPS259261 typ_app_1_simple3_lvscq3.gif
* CIN is optional and 0.1 µF is recommended to suppress transients due to the inductance of PCB routing or from input wiring.
Figure 42. Typical Application Schematic: Simple e-Fuse for STBs

9.2.1.1 Design Requirements

Table 1. Design Parameters

DESIGN PARAMETER EXAMPLE VALUE
Input voltage range, VIN 12 V
Undervoltage lockout set point, V(UV) Default: VUVR = 4.3 V
Overvoltage protection set point , V(OV) Default: VOVC = 15 V
Load at start-up, RL(SU) 4 Ω
Current limit, IOL 3.7 A
Load capacitance, COUT 1 µF
Maximum ambient temperatures, TA 85°C

9.2.1.2 Detailed Design Procedure

The following design procedure can be used to select component values for the TPS25926x.

9.2.1.2.1 Step by Step Design Procedure

To begin the design process a few parameters must be decided upon. The designer needs to know the following:

  • Normal input operation voltage
  • Maximum output capacitance
  • Maximum current Limit
  • Load during start-up
  • Maximum ambient temperature of operation

This design procedure below seeks to control the junction temperature of device under both static and transient conditions by proper selection of output ramp-up time and associated support components. The designer can adjust this procedure to fit the application and design criteria.

9.2.1.2.2 Programming the Current-Limit Threshold: RILIM Selection

The RILIM resistor at the ILIM pin sets the over load current limit, this can be set using Equation 4.

Equation 4. TPS259250 TPS259251 TPS259260 TPS259261 eq4_lvscq3.gif

For ILIM = 3.7 A, from Equation 4, RILIM is 100 kΩ, choose closest standard value resistor with 1% tolerance.

9.2.1.2.3 Undervoltage Lockout Set Point

The undervoltage lockout (UVLO) trip point is adjusted using the external voltage divider network of R1 and R2 as connected between IN, EN/UVLO and GND pins of the device. The values required for setting the undervoltage are calculated solving Equation 5.

Equation 5. TPS259250 TPS259251 TPS259260 TPS259261 eq5_slvscq3.gif

Where VENR is enable voltage rising threshold (1.4 V). Since R1 and R2 will leak the current from input supply (Vin), these resistors should be selected based on the acceptable leakage current from input power supply (Vin).

The current drawn by R1 and R2 from the power supply {I(R12) = V(IN)/(R1 + R2)}.

However, leakage currents due to external active components connected to the resistor string can add error to these calculations. So, the resistor string current, I(R12) must be chosen to be 20x greater than the leakage current expected.

For default UVLO of VUVR = 4.3 V, select R2 = OPEN, and R1 = 1 MΩ. Since EN/UVLO pin is rated only to 7 V, it cannot be connected directly to VIN = 12 V. It has to be connected through R1 = 1 MΩ only, so that the pull-up current for EN/UVLO pin is limited to < 20 µA.

The power failure threshold is detected on the falling edge of supply. This threshold voltage is 4% lower than the rising threshold, VUVR. This is calculated using Equation 6.

Equation 6. V(PFAIL) = 0.96 x VUVR

Where VUVR is 4.3 V, Power fail threshold set is : 4.1 V.

9.2.1.2.4 Setting Output Voltage Ramp Time (TdVdT)

For a successful design, the junction temperature of device should be kept below the absolute-maximum rating during both dynamic (start-up) and steady state conditions. Dynamic power stresses often are an order of magnitude greater than the static stresses, so it is important to determine the right start-up time and in-rush current limit required with system capacitance to avoid thermal shutdown during start-up with and without load.

The ramp-up capacitor CdVdT needed is calculated considering the two possible cases.

9.2.1.2.4.1 Case 1: Start-Up without Load: Only Output Capacitance COUT Draws Current During Start-Up

During start-up, as the output capacitor charges, the voltage difference as well as the power dissipated across the internal FET decreases. The average power dissipated in the device during start-up is calculated using Equation 8.

For TPS25926x device, the inrush current is determined as,

Equation 7. TPS259250 TPS259251 TPS259260 TPS259261 eq7_lvscq3.gif

Power dissipation during start-up is:

Equation 8. TPS259250 TPS259251 TPS259260 TPS259261 eq_15_slvsce9.gif

Equation 8 assumes that load does not draw any current until the output voltage has reached its final value.

9.2.1.2.4.2 Case 2: Start-Up with Load: Output Capacitance COUT and Load Draws Current During Start-Up

When load draws current during the turn-on sequence, there will be additional power dissipated. Considering a resistive load during start-up (RL(SU)), load current ramps up proportionally with increase in output voltage during TdVdT time. The average power dissipation in the internal FET during charging time due to resistive load is given by:

Equation 9. TPS259250 TPS259251 TPS259260 TPS259261 eq_19_slvsce9.gif

Total power dissipated in the device during startup is:

Equation 10. TPS259250 TPS259251 TPS259260 TPS259261 eq_20_slvsce9.gif

Total current during startup is given by:

Equation 11. TPS259250 TPS259251 TPS259260 TPS259261 eq_21_slvsce9.gif

If I(STARTUP) > IOL, the device limits the current to IOL and the current limited charging time is determined by:

Equation 12. TPS259250 TPS259251 TPS259260 TPS259261 eq12_slvscq3.gif

The power dissipation, with and without load, for selected start-up time should not exceed the shutdown limits as shown in Figure 43:

TPS259250 TPS259251 TPS259260 TPS259261 D031_SLVSCQ3.gif Figure 43. Thermal Shutdown Limit Plot

For the design example under discussion, select ramp-up capacitor CdVdT = OPEN. Then, using Equation 2:

Equation 13. TPS259250 TPS259251 TPS259260 TPS259261 eq13_lvscq3.gif

The inrush current drawn by the load capacitance (COUT) during ramp-up using Equation 14:

Equation 14. TPS259250 TPS259251 TPS259260 TPS259261 eq14_lvscq3.gif

The inrush power dissipation is calculated using Equation 15:

Equation 15. TPS259250 TPS259251 TPS259260 TPS259261 eq15_lvscq3.gif

For 90 mW of power loss, the thermal shut down time of the device should not be less than the ramp-up time TdVdT to avoid the false trip at maximum operating temperature. From thermal shutdown limit graph Figure 43 at TA = 85°C, for 90 mW of power, the shutdown time is infinite. So it is safe to use 0.79 ms as start-up time without any load on output.

Considering the start-up with load 4 Ω, the additional power dissipation, when load is present during start up is calculated using Equation 9:

Equation 16. TPS259250 TPS259251 TPS259260 TPS259261 eq16_lvscq3.gif

The total device power dissipation during start up is:

Equation 17. TPS259250 TPS259251 TPS259260 TPS259261 eq17_lvscq3.gif

From thermal shutdown limit graph at TA = 85°C, the thermal shutdown time for 6.09 W is more than 10 ms. So it is well within acceptable limits to use no external capacitor (CdV/dT) with start-up load of 4 Ω.

If, due to large COUT, there is a need to decrease the power loss during start-up, it can be done with increase of CdVdT capacitor.

9.2.1.2.5 Support Component Selection - CVIN

CVIN is a bypass capacitor to help control transient voltages, unit emissions, and local supply noise. Where acceptable, a value in the range of 0.001 μF to 0.1 μF is recommended for CVIN.

9.2.1.3 Application Curves

TPS259250 TPS259251 TPS259260 TPS259261 A01_HotPlug_StartUp_100uF_WithoutLoad.png
TPS25926x
Figure 44. Hot-Plug Start-Up: Output Ramp without Load on Output
TPS259250 TPS259251 TPS259260 TPS259261 A02_HotPlug_StartUp_100uF_With24OhmLoad.png
TPS25926x
Figure 45. Hot-Plug Start-Up: Output Ramp with 24-Ω Load at Start Up