ZHCSEM7 December   2015 TPS2559-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Thermal Sense
      2. 9.3.2 Overcurrent Protection
      3. 9.3.3 FAULT Response
    4. 9.4 Device Functional Modes
      1. 9.4.1 Operation with VIN Undervoltage Lockout (UVLO) Control
      2. 9.4.2 Operation with EN Control
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Step by Step Design Procedure
        2. 10.2.2.2 Input and Output Capacitance
        3. 10.2.2.3 Programming the Current-Limit Threshold
        4. 10.2.2.4 Design Above a Minimum Current Limit
        5. 10.2.2.5 Design Below a Maximum Current Limit
        6. 10.2.2.6 Accounting for Resistor Tolerance
        7. 10.2.2.7 Power Dissipation and Junction Temperature
        8. 10.2.2.8 Auto-Retry
        9. 10.2.2.9 Two-level Current-limit
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 社区资源
    2. 13.2 商标
    3. 13.3 静电放电警告
    4. 13.4 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN MAX UNIT
Voltage range IN, OUT, EN, ILIM, FAULT –0.3 7 V
IN to OUT –7 7 V
Continuous output current, IOUT OUT Internally Limited mA
Continuous FAULT sink current 20 mA
ILIM source current Internally Limited mA
Maximum junction temperature, TJ –40 to OTSD2 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltages are referenced to GND unless otherwise noted.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge(1) Human body model (HBM), ESD stress voltage, all pins(2) ±2000 V
Charged device model (CDM), ESD stress voltage, all pins(3) ±750
System Level (4) Contact discharge ±8000
Air discharge ±15000
(1) Electrostatic discharge (ESD) to measure device sensitivity or immunity to damage caused by assembly-line electrostatic discharges into the device.
(2) The passing level per AEC-Q100 Classification H2.
(3) The passing level per AEC-Q100 Classification C5.
(4) Surges per EN61000-4-2, 1999 applied between USB and output ground of the TPS2559EVM (SLUUB15) evaluation module (documentation available on the Web.) These were the test levels, not the failure threshold.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Input voltage, IN 2.5 6.5 V
VEN Input voltage, EN 0 6.5 V
IOUT Continuous output current of OUT 5.5 A
Continuous FAULT sink current 10 mA
R(ILIM) Recommended resistor limit range (1) 24.9 100 kΩ
TJ Operating junction temperature -40 125 °C
(1) R(ILIM) is the resistor from ILIM pin to GND and ILIM pin can be shorted to GND.

7.4 Thermal Information

THERMAL METRIC(1) TPS2559-Q1 UNIT
DRC (10 PINS)
RθJA Junction-to-ambient thermal resistance 40.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 45.5 °C/W
RθJB Junction-to-board thermal resistance 15.9 °C/W
ψJT Junction-to-top characterization parameter 0.4 °C/W
ψJB Junction-to-board characterization parameter 15.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.8 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Conditions are –40°C ≤ TJ ≤ 125°C, 2.5 V ≤ VIN ≤ 6.5 V, V(EN) = VIN, R(ILIM) = 49.9 kΩ. Positive current are into pins. Typical value is at 25°C. All voltages are with respect to GND (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SWITCH
RDS(on) Input - Output Resistance(1) TJ = 25°C 13 16 mΩ
-40°C ≤ TJ ≤ 125°C 21
ENABLE INPUT EN
EN turn on/off threshold 0.66 1.1 V
Hysteresis 55(2) mV
I(EN) Input current V(EN) = 0 V or V(EN) = 6.5 V –1 1 µA
CURRENT LIMIT
IOS OUT short circuit current limit R(ILIM) = 24.9 kΩ 4490 4730 4931 mA
R(ILIM) = 44.2kΩ 2505 2660 2805
R(ILIM) = 49.9kΩ 2215 2360 2490
R(ILIM) = 61.9 kΩ 1780 1900 2015
R(ILIM) = 100 kΩ 1080 1180 1265
ILIM pin short to GND (R(ILIM) = 0) 5860 6700 7460
SUPPLY CURRENT
I(IN_OFF) Disabled, IN supply current V(EN) = 0 V, No load on OUT 0.1 2 µA
I(IN_ON) Enabled, IN supply current R(ILIM) = 100 kΩ, no load on OUT 97 125 µA
R(ILIM) = 24.9 kΩ, no load on OUT 107 135
I(REV) Reverse leakage current VOUT = 6.5 V, VIN = 0 V, TJ = 25°C,
Measure IOUT		 0.01 1 µA
UNDERVOLTAGE LOCKOUT
VUVLO IN rising UVLO threshold voltage 2.36 2.45 V
Hysteresis 35(2) mV
FAULT
VOL Output low voltage IFAULT = 1 mA 180 mV
Off-state leakage VFAULT = 6.5 V 1 µA
THERMAL SHUTDOWN
OTSD2 Thermal shutdown threshold 155 °C
OTSD1 Thermal shutdown threshold in current-limit 135
Hysteresis 20 (2)
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature. Thermal effects must be taken into account separately
(2) These parameters are provided for reference only, and don’t constitute part of TI’s published device specifications for purposes of TI’s product warranty.

7.6 Timing Requirements

Conditions are –40°C ≤ TJ = ≤ 125°C, 2.5 V ≤ VIN ≤ 6.5 V, V(EN) = VIN, R(ILIM) = 49.9 kΩ. Positive current are into pins. Typical value is at 25°C. All voltages are with respect to GND (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SWITCH
tr OUT voltage rise time VIN = 6.5 V CL = 1 µF, RL = 100 Ω, See Figure 13 2.6 3.44 5.2 ms
VIN = 2.5 V 1.3 2.01 3.9
tf OUT voltage fall time VIN = 6.5 V 0.7 0.89 1.3
VIN = 2.5 V 0.42 0.58 1.04
ENABLE INPUT EN
ton OUT voltage turn-on time CL = 1 µF, RL = 100 Ω, See Figure 14 15 ms
toff OUT voltage turn-off time 8
CURRENT LIMIT
tIOS Short-circuit response time(1) VIN = 5 V, RSHORT = 50 mΩ, See Figure 15 3.5(1) µs
FAULT
FAULT deglitch FAULT assertion or de-assertion due to overcurrent condition 6 9 13 ms
(1) This parameter is provided for reference only and does not constitute part of TI's published device specifications for purposes of TI's product warranty

7.7 Typical Characteristics

TPS2559-Q1 C001_SLVSCL5.png
Figure 1. Under-voltage Lockout (UVLO) vs Temperature
TPS2559-Q1 C003_SLVSCL5.png
R(ILIM) = 100 KΩ
Figure 3. Supply Current, Output Enabled (IIN_ON) vs Temperature
TPS2559-Q1 C005_SLVSCL5.png
VOUT = 6.5 V
Figure 5. Reverse Leakage Current (IREV) v. Temperature
TPS2559-Q1 C007_SLVSCL5.png
VIN = 6.5 V ILIM pin short to GND
Figure 7. Short Circuit Current (IOS) vs Temperature
TPS2559-Q1 C009_SLVSCL5.png
COUT = 1 µF R(LOAD) = 100 Ω
Figure 9. Output Rise Time (tR) vs Temperature
TPS2559-Q1 C011_SLVSCL5.png
VIN = 6.5 V
Figure 11. Short Circuit Current (IOS) vs Temperature
TPS2559-Q1 C002_SLVSCL5.png
VIN = 6.5 V
Figure 2. Supply Current, Output Disabled (IIN_OFF) vs Temperature
TPS2559-Q1 C004_SLVSCL5.png
R(ILIM) = 24.9 KΩ
Figure 4. Supply Current, Output Enabled (IIN_ON) vs Temperature
TPS2559-Q1 C006_SLVSCL5.png
VIN = 5 V
Figure 6. Input-Output Resistance (RDS(on)) vs Temperature
TPS2559-Q1 C008_SLVSCL5.png
V(FAULT) = 2.5 V
Figure 8. Deglitch Time (tFAULT) vs Temperature
TPS2559-Q1 C010_SLVSCL5.png
COUT = 1 µF R(LOAD) = 100 Ω
Figure 10. Output Fall Time (tF) vs Temperature