VIN |
|
UVLO |
VIN rising |
2.6 |
2.85 |
2.9 |
V |
Hysteresis |
|
150 |
|
mV |
|
Bias current |
EN = 2.4 V |
|
25 |
100 |
μA |
EN = 0 V |
|
3.9 |
5 |
mA |
VIN, VOUT |
|
RON |
RVIN-VOUT, IVOUT < ILIM, 1 A ≤ IVOUT ≤ 4.5 A |
|
33 |
50 |
mΩ |
|
Power limit TPS242x |
VVIN: 12 V, CVOUT = 1000 μF, EN: 3 V → 0 V |
3 |
5 |
7.5 |
W |
|
Reverse diode voltage |
VVOUT > VVIN , EN = 5 V, IVIN = –1 A |
|
0.77 |
1 |
V |
ISET |
ISET |
Fault current threshold |
IVOUT ↑, ICT: sinking → sourcing, pulsed test |
|
|
|
A |
0°C ≤ TJ ≤ +85°C |
RRSET = 200 kΩ |
0.8 |
|
1.2 |
RRSET = 100 kΩ |
1.8 |
|
2.2 |
RRSET = 49.9 kΩ |
3.6 |
|
4.4 |
–40°C ≤ TJ ≤ +125°C |
RRSET = 200 kΩ |
0.75 |
|
1.25 |
RRSET = 100 kΩ |
1.75 |
|
2.25 |
RRSET = 49.9 kΩ |
3.6 |
|
4.4 |
ILIM / ISET |
Ratio ILIM / ISET |
RRSET = 200 kΩ |
1.1 |
1.8 |
2.6 |
A |
RRSET = 100 kΩ |
1.1 |
1.5 |
2.1 |
RRSET = 49.9 kΩ |
1.1 |
1.4 |
1.6 |
ILIM |
Current limit |
IVOUT rising, VVIN–VOUT = 0.3 V, pulsed test |
RRSET = 200 kΩ |
1.1 |
1.8 |
2.4 |
A |
RRSET = 100 kΩ |
2.3 |
3 |
3.7 |
A |
RRSET = 49.9 kΩ |
4.6 |
5.5 |
6.3 |
A |
CT |
|
Charge-discharge current |
ICT sourcing, VCT = 1 V, In current limit |
29 |
35 |
41 |
μA |
ICT sinking (–2), VCT = 1 V, drive CT to 1 V, measure current |
1 |
1.4 |
1.8 |
|
Threshold voltage |
VCT rising |
1.3 |
1.4 |
1.5 |
V |
VCT falling, drive CT to 1 V, measure current |
0.1 |
0.16 |
0.3 |
|
ON/OFF fault duty cycle |
VVOUT = 0 V |
2.8% |
3.7% |
4.6% |
|
EN |
|
Threshold voltage |
VEN falling |
0.8 |
1 |
1.5 |
V |
Hysteresis |
20 |
150 |
250 |
mV |
|
Input bias current |
VEN = 2.4 V |
–2 |
0 |
0.5 |
μA |
VEN = 0.2 V |
–3 |
1 |
0.5 |
|
Turnon propagation delay |
VVIN = 3.3 V, ILOAD = 1 A, VEN : 2.4 V → 0.2 V,
VVOUT: rising 90% × VVIN |
|
350 |
500 |
μs |
|
Turnoff propagation delay |
VVIN = 3.3 V, ILOAD = 1 A, VEN : 0.2 V → 2.4 V,
VVOUT: ↓ 10% × VVIN |
|
30 |
50 |
FLT |
VOL |
Low level output voltage |
VCT = 1.8 V, IFLT = 1 mA |
|
0.2 |
0.4 |
V |
|
Leakage current |
VFLT = 18 V |
|
|
1 |
μA |
PG |
|
PG threshold |
V(VIN–VOUT) falling |
0.4 |
0.5 |
0.75 |
V |
Hysteresis |
0.1 |
0.25 |
0.4 |
VOL |
Low level output voltage |
IPG = 1 mA |
|
0.2 |
0.4 |
|
Leakage current |
VPG = 18 V |
|
|
1 |
μA |
THERMAL SHUTDOWN |
TSD |
Thermal shutdown |
Junction temperature rising |
|
160 |
|
°C |
|
|
Hysteresis |
|
10 |
|