ZHCSRR9J december   2003  – august 2023 TPS2061 , TPS2062 , TPS2063 , TPS2065 , TPS2066 , TPS2067

PRODMIX  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 说明（续）
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Dissipating Rating Table
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Electrical Characteristics
    5. 7.5 Typical Characteristics(All Devices Excluding TPS2065DBV)
    6. 7.6 Typical Characteristics (TPS2065DBV)
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1  Functional Block Diagram
    2. 9.2  Power Switch
    3. 9.3  Charge Pump
    4. 9.4  Driver
    5. 9.5  Enable ( ENx or ENx)
    6. 9.6  Current Sense
    7. 9.7  Overcurrent
      1. 9.7.1 Overcurrent Conditions (All Devices Excluding TPS2065DBV)
      2. 9.7.2 Overcurrent Conditions (TPS2065DBV)
    8. 9.8  Overcurrent ( OCx)
    9. 9.9  Thermal Sense
    10. 9.10 Undervoltage Lockout
  11. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1  Power-supply Considerations
      2. 10.1.2  OC Response
      3. 10.1.3  Power Dissipation and Junction Temperature
      4. 10.1.4  Thermal Protection
      5. 10.1.5  Undervoltage Lockout (UVLO)
      6. 10.1.6  Universal Serial Bus (USB) Applications
      7. 10.1.7  Host/Self-Powered and Bus-powered Hubs
      8. 10.1.8  Low-power Bus-powered and High-Power Bus-Powered Functions
      9. 10.1.9  USB Power-distribution Requirements
      10. 10.1.10 Generic Hot-Plug Applications
  12. 11Device and Documentation Support
    1. 11.1 Device Support
    2. 11.2 Documentation Support
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 静电放电警告
    7. 11.7 术语表
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

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机械数据 (封装 | 引脚)
  • D|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.4 Electrical Characteristics

over recommended operating junction temperature range, VI(IN) = 5.5 V, IO = 1 A, VI( ENx) = 0 V, or VI(ENx) = 5.5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
POWER SWITCH
rDS(on) Static drain-source on-state resistance, 5-V operation and 3.3-V operation VI(IN) = 5 V or 3.3 V, IO = 1 A, -40°C ≤ TJ ≤ 125°C D and DGN packages 70 135 mΩ
DBV package 95 140
Static drain-source on-state resistance, 2.7-V
operation		 VI(IN) = 2.7 V, IO = 1 A, -40°C ≤ TJ ≤ 125°C D and DGN packages 75 150 mΩ
tr Rise time, output VI(IN) = 5.5 V CL = 1 μF, RL = 5 Ω, TJ = 25°C 0.6 1.5 ms
VI(IN) = 2.7 V 0.4 1
tf Fall time, output VI(IN) = 5.5 V 0.05 0.5
VI(IN) = 2.7 V 0.05 0.5
ENABLE INPUT EN OR EN
VIH High-level input voltage 2.7 V ≤ VI(IN) ≤ 5.5 V 2 V
VIL Low-level input voltage 2.7 V ≤ VI(IN) ≤ 5.5 V 0.8
II Input current VI( ENx) = 0 V or 5.5 V, VI(ENx) = 0 V or 5.5 V -0.5 0.5 μA
ton Turnon time CL = 100 μF, RL = 5 Ω 3 ms
toff Turnoff time CL = 100 μF, RL = 5 Ω 10
CURRENT LIMIT
IOS Short-circuit output current VI(IN) = 5 V, OUT connected to GND,
device enabled into short-circuit		 TJ = 25°C 1.1 1.5 1.9 A
-40°C ≤ TJ ≤ 125°C 1.1 1.5 2.1
IOC_TRIP(2) Overcurrent trip threshold VI(IN) = 5 V, current ramp (≤ 100 A/s) on OUT TPS2061

TPS2062

TPS2065 (D and DGN package only)

TPS2066		 1.6 2.3 2.7 A
TPS2063, TPS2067 1.6 2.4 3.0
SUPPLY CURRENT (TPS2061, TPS2065)
Supply current, low-level output No load on OUT, VI( ENx) = 5.5 V,
or VI(ENx) = 0 V		 TJ = 25°C 0.5 1 μA
-40°C ≤ TJ ≤ 125°C 0.5 5
Supply current, high-level output No load on OUT, VI( ENx) = 0 V,
or VI(ENx) = 5.5 V		 TPS2061

TPS2065 (D and DGN packages only)

 TJ = 25°C 43 60 μA
-40°C ≤ TJ ≤ 125°C 43 70
TPS2065DBV TJ = 25°C 75 95
-40°C ≤ TJ ≤ 125°C 75 95
Leakage current OUT connected to ground, VI( EN) = 5.5 V,
or VI(EN) = 0 V		 -40°C ≤ TJ ≤ 125°C 1 μA
Reverse leakage current VI(OUTx) = 5.5 V, IN = ground TJ = 25°C 0 μA
SUPPLY CURRENT (TPS2062, TPS2066)
Supply current, low-level output No load on OUT, VI( ENx) = 5.5 V,
or VI(ENx) = 0 V		 TJ = 25°C 0.5 1 μA
-40°C ≤ TJ ≤ 125°C 0.5 5
Supply current, high-level output No load on OUT, VI( ENx) = 0 V,
or VI(ENx) = 5.5 V		 TJ = 25°C 50 70 μA
-40°C ≤ TJ ≤ 125°C 50 90
Leakage current OUT connected to ground, VI(/ENx) = 5.5 V,
or VI(ENx) = 0 V		 -40°C ≤ TJ ≤ 125°C 1 μA
Reverse leakage current VI(OUTx) = 5.5 V, IN = ground TJ = 25°C 0.2 μA
SUPPLY CURRENT (TPS2063, TPS2067)
Supply current, low-level output No load on OUT, VI( ENx) = 0 V TJ = 25°C 0.5 2 μA
-40°C ≤ TJ ≤ 125°C 0.5 10
Supply current, high-level output No load on OUT, VI( ENx) = 5.5 V TJ = 25°C 65 90 μA
-40°C ≤ TJ ≤ 125°C 65 110
Leakage current OUT connected to ground, VI( ENx) = 5.5 V,
or VI(ENx) = 0 V		 -40°C ≤ TJ ≤ 125°C 1 μA
Reverse leakage current VI(OUTx) = 5.5 V, INx = ground TJ = 25°C 0.2 μA
UNDERVOLTAGE LOCKOUT (All Devices excluding TPS2065DBV)
Low-level input voltage, IN 2 2.5 V
Hysteresis, IN TJ = 25°C 75 mV
UNDERVOLTAGE LOCKOUT (TPS2065DBV)
Low-level input voltage, IN 2 2.6 V
Hysteresis, IN TJ = 25°C 75 mV
OVERCURRENT OC1 and OC2
Output low voltage, VOL(OCx) IO( OCx) = 5 mA 0.4 V
Off-state current VO( OCx) = 5 V or 3.3 V 1 μA
OC deglitch OCx assertion or deassertion 4 8 15 ms
THERMAL SHUTDOWN(3)
Thermal shutdown threshold 135 °C
Recovery from thermal shutdown 125 °C
Hysteresis 10 °C
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
(2) TPS2065DBV doesn't have overcurrent trip threshold. Current will be limited to IOS under different test conditon. Check Section 9.7 for more details.
(3) The thermal shutdown only reacts under overcurrent conditions.