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  • TPD4E001-Q1 具有 1.5pF I/O 电容的 4 通道 ESD 保护阵列

    • ZHCSB23F March   2013  – September 2017 TPD4E001-Q1

      PRODUCTION DATA.  

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  • TPD4E001-Q1 具有 1.5pF I/O 电容的 4 通道 ESD 保护阵列
  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—AEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 ESD Ratings—ISO Specification
    5. 6.5 Recommended Operating Conditions
    6. 6.6 Thermal Information
    7. 6.7 Electrical Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 AEC-Q100 Qualified
      2. 7.3.2 IEC 61000-4-2 Level 4 ESD Protection
      3. 7.3.3 IEC 61000-4-5 Surge Protection
      4. 7.3.4 Low 1.5-pF Input Capacitance
      5. 7.3.5 Low 10-nA (Maximum) Leakage Current
      6. 7.3.6 0.9-V to 5.5-V Supply Voltage Range
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range on IO1 Through IO4
        2. 8.2.2.2 Voltage Range on VCC
        3. 8.2.2.3 Bandwidth on IO1 Through IO4
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息
  13. 重要声明

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DATA SHEET

TPD4E001-Q1 具有 1.5pF I/O 电容的 4 通道 ESD 保护阵列

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

  • 符合 AEC-Q100 标准，其中包括以下内容：
    • 器件温度等级 1：-40°C 至 +125°C 运行环境温度范围
    • 器件人体模型 (HBM) 静电放电 (ESD) 分类等级 3B
    • HBM 电平 15kV
    • 器件带电器件模型 (CDM) ESD 分类等级 C5
  • IEC 61000-4-2 4 级 ESD 保护
    • ±8kV 接触放电
    • ±15kV 气隙放电
  • IEC 61000-4-5 浪涌保护
    • 5.5A (8/20µs)
  • 输入电容低至 1.5pF
  • 最大泄漏电流低至 10nA
  • 电源电压范围：0.9V 至 5.5V

2 应用

  • 终端设备
    • 汽车音响主机
    • 汽车后座娱乐系统
    • 汽车后置摄像头系统
  • 接口
    • USB 2.0
    • 以太网
    • 精密模拟接口

3 说明

TPD4E001-Q1 器件是一款低电容 TVS 二极管阵列，设计用于为通信线路中连接的敏感电子元件提供 ESD 保护。每个通道包含一对将 ESD 脉冲引导至 VCC 或者 GND 的瞬态电压抑制二极管。根据 IEC 61000-4-2 国际标准规定，TPD4E001-Q1 可防止接触放电电压高达 ±8kV 和气隙放电高达电压 ±15kV 的 ESD 事件发生。该器件每通道的电容低至 1.5pF，因此非常适用于高速数据接口。低泄露电流（最大 10nA）确保了系统的最低功耗和模块接口的高精度。

此外，此器件还适用于为使用 USB 2.0、以太网或高精度模拟接口的汽车音响主机、后座娱乐系统以及后座摄像机系统提供保护。

器件信息(1)

器件型号 封装 封装尺寸（标称值）
TPD4E001-Q1 SOT-23 (6) 2.90mm x 1.60mm
  1. 如需了解所有可用封装，请见数据表末尾的可订购产品附录。

典型电路原理图

TPD4E001-Q1 appin_lls682.gif

4 修订历史记录

Changes from E Revision (June 2017) to F Revision

  • Added ISO SpecificationGo

Changes from D Revision (March 2015) to E Revision

  • Updated Typical Application SchematicGo

Changes from C Revision (June 2013) to D Revision

  • Added 引脚配置和功能部分，ESD 额定值表，特性 描述部分，器件功能模式，应用和实施部分，电源相关建议部分，布局部分，器件和文档支持部分以及机械、封装和可订购信息部分Go
  • Changed 器件 CDM ESD 分类等级，从 C4B 改为 C5Go

Changes from B Revision (February 2012) to C Revision

  • Changed maximum ICC supply current in Electrical CharacteristicsGo

Changes from A Revision (April 2013) to B Revision

  • 已修改 说明 部分的文本Go
  • Revised Figure 2 graphGo
  • Revised APPLICATION INFORMATION schematicGo

5 Pin Configuration and Functions

DBV Package
6-Pin SOT-23
Top View
TPD4E001-Q1 po_SLLSEG0.gif

Pin Functions

PIN TYPE DESCRIPTION
NAME NO.
GND 2 GND Ground
IO1 1 I/O ESD-protected channel
IO2 3
IO3 4
IO4 6
VCC 5 I Power-supply input. Bypass VCC to GND with a 0.1-μF ceramic capacitor

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VCC Supply voltage –0.3 7 V
VIO I/O voltage tolerance –0.3 VCC + 0.3 V
IPP Peak pulse current (Tp = 8/20 µs)(2) 5.5 A
PPP Peak pulse power (Tp = 8/20 µs)(2) 100 W
TA Free air operating temperature –40 125 °C
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) SStresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC 61000-4-5.

6.2 ESD Ratings—AEC Specification

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±15000 V
Charged-device model (CDM), per AEC Q100-011 ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 ESD Ratings—IEC Specification

VALUE UNIT
V(ESD) Electrostatic discharge IEC 61000-4-2 contact discharge ±8000 V
IEC 61000-4-2 air-gap discharge ±15000

6.4 ESD Ratings—ISO Specification

VALUE UNIT
V(ESD) Electrostatic discharge ISO 10605 (330 pF, 330 Ω) contact discharge ±8000 V
ISO 10605 (330 pF, 330 Ω) air-gap discharge ±15000

6.5 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
TA Free air operating temperature –40 125 °C
VCC pin Operating voltage 0.9 5.5 V
IO1, IO2, IO3, IO4 pins Operating voltage 0 VCC V

6.6 Thermal Information

THERMAL METRIC(1) TPD4E001-Q1 UNIT
DBV (SOT-23)
6 PINS
RθJA Junction-to-ambient thermal resistance 202.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 146.2 °C/W
RθJB Junction-to-board thermal resistance 47.1 °C/W
ψJT Junction-to-top characterization parameter 37.6 °C/W
ψJB Junction-to-board characterization parameter 46.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.7 Electrical Characteristics

VCC = 5 V ± 10%, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
ICC Supply current 1 200 nA
VF Diode forward voltage IF = 10 mA 0.65 0.95 V
VBR Breakdown voltage IBR = 10 mA 11 V
VCLAMP Clamping voltage Surge strike(2) on IO pin, GND pin grounded, VCC = 5.5 V, IPP = 5.5 A Positive transients 16 V
VRWM Reverse standoff voltage IO pin to GND pin 5.5 V
IIO Channel leakage current VIO = GND to VCC ±10 nA
CIO Channel input capacitance VCC = 5 V, bias of VCC/2, f = 10 MHz 1.5 pF
(1) Typical values are at VCC = 5 V and TA = 25°C.

6.8 Typical Characteristics

TPD4E001-Q1 iocap_iovolt_lls682.gif Figure 1. IO Capacitance vs IO Voltage (VCC = 5 V)
TPD4E001-Q1 peak_pulse_SLLSEG0.gif Figure 3. Peak Pulse Waveform, VCC = 5.5 V
TPD4E001-Q1 C001_SLLSEG0.png Figure 2. IO Leakage Current vs Temperature

7 Detailed Description

7.1 Overview

The TPD4E001-Q1 device is a low-capacitance, TVS diode array designed for ESD protection in sensitive electronics connected to communication lines. Each channel consists of a pair of transient voltage suppression diodes that steer ESD pulses to VCC or GND. The TPD4E001-Q1 device protects against ESD events up to ±8-kV contact discharge and ±15-kV air-gap discharge, as specified in IEC 61000-4-2 international standard. This device has a low capacitance of 1.5-pF per channel making it ideal for use in high-speed data interfaces. The low-leakage current (10 nA maximum) ensures minimum power consumption for the system and high accuracy for analog interfaces.

7.2 Functional Block Diagram

TPD4E001-Q1 lb_lls682.gif

7.3 Feature Description

7.3.1 AEC-Q100 Qualified

This device is qualified according to the AEC-Q100 standard. The device temperature rating is Grade 1 (–40°C to +125°C). The HBM Classification Level passed is 3B (> 8 kV). The CDM Classification Level passed is C5 (all pins 750 V to <1000 V).

7.3.2 IEC 61000-4-2 Level 4 ESD Protection

The device is specified at ±8-kV contact discharge and ±15-kV air gap discharge.

7.3.3 IEC 61000-4-5 Surge Protection

This device is rated to pass at least 5.5-A of peak pulse current according to the IEC 61000-4-5 (8/20-µs pulse) standard.

7.3.4 Low 1.5-pF Input Capacitance

This device has a typical capacitance of 1.5-pF on each of the four IO pins. This allows for high speed signals on the IO pins in excess of 1 Gbps.

7.3.5 Low 10-nA (Maximum) Leakage Current

This device is rated to have a maximum leakage current of 10-nA on each of the four IO pins.

7.3.6 0.9-V to 5.5-V Supply Voltage Range

This device is specified to operate with a supply voltage (on VCC) between 0.9-V and 5.5-V to ensure sufficient signal integrity.

7.4 Device Functional Modes

The TPD4E001-Q1 device is a passive integrated circuit that triggers when voltages are above VBR or below the lower diodes VF (–0.6 V). During ESD events, voltages as high as ±8 kV (contact) can be directed to ground via the internal diode network. Once the voltages on the protected line fall below the trigger levels of TPD4E001-Q1 (usually within 10s of nano-seconds) the device reverts back to its high-impedance state.

8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

8.1 Application Information

The TPD4E001-Q1 device is a TVS diode array which is typically used to provide a path to ground for dissipating ESD events on high-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.

8.2 Typical Application

For this design example, one TPD4E001-Q1 device is being used in a dual USB 2.0 application. This provides a complete port protection scheme.

TPD4E001-Q1 appin_lls682.gif Figure 4. Typical Application Schematic

8.2.1 Design Requirements

For this design example, a single TPD4E001-Q1 device is used to protect all the pins on two USB2.0 connectors.

Given the USB application, known parameters are listed in the Table 1.

Table 1. Design Parameters

DESIGN PARAMETER VALUE
Signal range on IO1, IO2, IO3, or IO4 0 V to 3.6 V
Voltage range on VCC 0 V to 5.25 V
Operating Frequency on IO1, IO2, IO3, or IO4 240 MHz

8.2.2 Detailed Design Procedure

To begin the design process, some parameters must be decided upon; the designer needs to know the following:

  • Signal range on all protected lines
  • Operating frequency on all protected lines

8.2.2.1 Signal Range on IO1 Through IO4

The TPD4E001-Q1 device has 4 identical protection channels for signal lines. The symmetry of the device provides flexibility when selecting which of the 4 IO channels protects which signal lines. Any IO supports a signal range of 0 to (VCC + 0.3) V. Therefore, this device supports the USB 2.0 signal swing assuming VCC is set appropriately.

8.2.2.2 Voltage Range on VCC

The VCC pin can be connected in one of two ways:

  • If the VCC pin connects to the system power supply, the TPD4E001-Q1 device works as a transient suppressor for any signal swing above VCC + VF. TI recommends a 0.1-μF capacitor on the device VCC pin for ESD bypass.
  • If the VCC pin does not connect to the system power supply, the TPD4E001-Q1 device can tolerate higher signal swing in the range up to 10 V. Note that TI still recommends a 0.1-μF capacitor at the VCC pin for ESD bypass.

If this pin is connected to the USB 2.0 VBUS supply or left floating, the allowable signal swing is enough for a USB 2.0 application.

8.2.2.3 Bandwidth on IO1 Through IO4

Each IO pin on the TPD4E001-Q1 device has a typical capacitance of 1.5 pF. This capacitance is low enough to easily support USB 2.0 data rates.

8.2.3 Application Curve

TPD4E001-Q1 D001_SLLSEG0.gif Figure 5. IEC 61000-4-2 Voltage Clamp Waveform 8-kV Contact

9 Power Supply Recommendations

This device is a passive ESD protection device so there is no need to power it. Do not violate the maximum voltage specifications for each pin.

10 Layout

10.1 Layout Guidelines

When placed near the connector, the TPD4E001-Q1 device's ESD solution offers little or no signal distortion during normal operation due to low IO capacitance and ultra-low leakage-current specifications. The TPD4E001-Q1 device ensures that the core circuitry is protected and the system is functioning properly in the event of an ESD strike. For proper operation, observe the following layout and design guidelines:

  • Place the TPD4E001-Q1 device solution close to the connector. This allows the device to take away the energy associated with ESD strike before it reaches the internal circuitry of the system board.
  • Place a 0.1-μF capacitor very close to the VCC pin. This limits any momentary voltage surge at the IO pin during the ESD strike event.
  • Ensure that there is enough metallization for the VCC and GND loop. During normal operation, the TPD4E001-Q1 device consumes nA leakage current. But during the ESD event, VCC and GND may see 15 A to 30 A of current, depending on the ESD level. Sufficient current path enables safe discharge of all the energy associated with the ESD strike.
  • Leave the unused IO pins floating.
  • One can connect the VCC pin in two different ways:
    1. If the VCC pin connects to the system power supply, the TPD4E001-Q1 works as a transient suppressor for any signal swing above VCC + VF. TI recommends a 0.1-μF capacitor on the device VCC pin for ESD bypass.
    2. If the VCC pin does not connect to the system power supply, the TPD4E001-Q1 can tolerate higher signal swing in the range up to 10 V. Note that TI still recommends a 0.1-μF capacitor at the VCC pin for ESD bypass.
  • The optimum placement is as close to the connector as possible.
    • EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces, resulting in early system failures.
    • The PCB designer needs to minimize the possibility of EMI coupling by keeping any unprotected traces away from the protected traces which are between the TVS and the connector.
  • Route the protected traces as straight as possible.
  • Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded corners with the largest radii possible.
    • Electric fields tend to build up on corners, increasing EMI coupling.

10.2 Layout Example

TPD4E001-Q1 TPD4E001-Q1-layout.gif

11 器件和文档支持

11.1 文档支持

11.1.1 相关文档

请参阅如下相关文档：

  • 阅读和理解 ESD 保护数据表
  • 《ESD 布局指南》

11.2 接收文档更新通知

如需接收文档更新通知，请访问 ti.com 上的器件产品文件夹。单击右上角的通知我 进行注册，即可每周接收产品信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。

11.3 社区资源

下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商“按照原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅 TI 的 《使用条款》。

    TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在 e2e.ti.com 中，您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。
    设计支持 TI 参考设计支持 可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。

11.4 商标

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.5 静电放电警告

esds-image

这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损伤。

11.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

12 机械、封装和可订购信息

以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。这些数据如有变更，恕不另行通知和修订此文档。如欲获取此数据表的浏览器版本，请参阅左侧的导航。



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TI 组件未获得用于 FDA Class III（或类似的生命攸关医疗设备）的授权许可，除非各方授权官员已经达成了专门管控此类使 用的特别协议。

只有那些 TI 特别注明属于军用等级或“增强型塑料”的 TI 组件才是设计或专门用于军事/航空应用或环境的。购买者认可并同 意，对并非指定面向军事或航空航天用途的 TI组件进行军事或航空航天方面的应用，其风险由客户单独承担，并且由客户独 力负责满足与此类使用相关的所有法律和法规要求。

TI 已明确指定符合 ISO/TS16949 要求的产品，这些产品主要用于汽车。在任何情况下，因使用非指定产品而无法达到 ISO/TS16949要求，TI不承担任何责任。

产品

  • 数字音频: www.ti.com.cn/audio
  • 放大器和线性器件: www.ti.com.cn/amplifiers
  • 数据转换器: www.ti.com.cn/dataconverters
  • DLP® 产品: www.dlp.com
  • DSP - 数字信号处理器: www.ti.com.cn/dsp
  • 时钟和计时器: www.ti.com.cn/clockandtimers
  • 接口: www.ti.com.cn/interface
  • 逻辑: www.ti.com.cn/logic
  • 电源管理: www.ti.com.cn/power
  • 微控制器 (MCU): www.ti.com.cn/microcontrollers
  • RFID 系统: www.ti.com.cn/rfidsys
  • OMAP应用处理器: www.ti.com/omap
  • 无线连通性: www.ti.com.cn/wirelessconnectivity

应用

  • 通信与电信: www.ti.com.cn/telecom
  • 计算机及周边: www.ti.com.cn/computer
  • 消费电子: www.ti.com/consumer-apps
  • 能源: www.ti.com/energy
  • 工业应用: www.ti.com.cn/industrial
  • 医疗电子: www.ti.com.cn/medical
  • 安防应用: www.ti.com.cn/security
  • 汽车电子: www.ti.com.cn/automotive
  • 视频和影像: www.ti.com.cn/video

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