ZHCS820E February   2012  – September 2023 TPD1E10B09

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 接收文档更新通知
    2. 9.2 支持资源
    3. 9.3 Trademarks
    4. 9.4 静电放电警告
    5. 9.5 术语表
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.4 Thermal Information

THERMAL METRIC(1) TPD1E10B09 UNIT
DPY (X1SON)
2 PINS
RθJA Junction-to-ambient thermal resistance 615.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 404.8 °C/W
RθJB Junction-to-board thermal resistance 493.3 °C/W
ψJT Junction-to-top characterization parameter 127.7 °C/W
ψJB Junction-to-board characterization parameter 493.3 °C/W
P Power Dissipation(2) 162 mW
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) Max junction temperature: 125°C; power dissipation calculated at 25°C ambient temperature using JEDEC High K board Standard. Not to be used for steady state power dissipation in the breakdown region.