SLOS704B January 2011 – August 2015 TPA6138A2
PRODUCTION DATA.
MIN | MAX | UNIT | |
---|---|---|---|
VDD to GND | –0.3 | 4 | V |
Input voltage, VI | VSS – 0.3 | VDD + 0.3 | V |
Minimum load impedance – line outputs – OUTL, OUTR | 12.8 | Ω | |
Mute to GND, UVP to GND | –0.3 | VDD +0.3 | V |
Maximum operating junction temperature range, TJ | –40 | 150 | °C |
Storage temperature range, Tstg | –40 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VDD | Power supply | DC supply voltage | 3 | 3.3 | 3.6 | V |
RL | Load impedance | 16 | 32 | Ω | ||
VIL | Low-level input voltage | Mute | 40 | %VDD | ||
VIH | High-level input voltage | Mute | 60 | %VDD | ||
TA | Ambient temperature | –40 | 25 | 85 | °C |
THERMAL METRIC(1) | TPA6138A2 | UNIT | |
---|---|---|---|
PW (TSSOP) | |||
14 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 130 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 49 | °C/W |
RθJB | Junction-to-board thermal resistance | 63 | °C/W |
ψJT | Junction-to-top characterization parameter | 3.6 | °C/W |
ψJB | Junction-to-board characterization parameter | 62 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
|VOS| | Output offset voltage | VDD = 3.3 V | 0.5 | 1 | mV | |
PSRR | Power-supply rejection ratio | 80 | dB | |||
VOH | High-level output voltage | VDD = 3.3 V | 3.1 | V | ||
VOL | Low-level output voltage | VDD = 3.3 V | –3.05 | V | ||
VUVP_EX | External UVP detect voltage | 1.25 | V | |||
VUVP_EX_HYSTERESIS | External UVP detect hysteresis current | 5 | µA | |||
fCP | Charge-pump switching frequency | 200 | 300 | 400 | kHz | |
|IIH| | High-level input current, Mute | VDD = 3.3 V, VIH = VDD | 1 | µA | ||
|IIL| | Low-level input current, Mute | VDD = 3.3 V, VIL = 0 V | 1 | µA | ||
IDD | Supply current | VDD = 3.3 V, no load, Mute = VDD, no load | 5 | 14 | 25 | mA |
VDD = 3.3 V, no load, Mute = GND, disabled | 14 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PO | Output power, outputs in phase | THD+N = 1%, VDD = 3.3 V, f = 1 kHz, RL = 32 Ω | 40 | mW | ||
THD+N | Total harmonic distortion plus noise | VDD = 3.3V, f = 1kHz, RLD = 32Ω, Po = 10mW | 0.01% | |||
SNR | Signal-to-noise ratio(1) | A-weighted | 90 | 96 | dB | |
DNR | Dynamic range(2) | A-weighted | 90 | 100 | dB | |
VN | Noise voltage | A-weighted | 13 | μV | ||
ZO | Output Impedance when muted | Mute = GND | 110 | mΩ | ||
Input-to-output attenuation when muted | Mute = GND | 80 | dB | |||
Crosstalk—L to R, R to L | Po = 20 mW | –75 | dB | |||
ILIMIT | Current limit | PVDD = 3.3 V | 50 | mA |
VDD = 3.3 V, | RL = 32 Ω |
VDD = 3.3 V, | RL = 32 Ω |
VDD = 3.3 V, | RL = 16 Ω |
VDD = 3.3 V | RL = 16 Ω |
Gain = 6dB | Vripple = 200 mVpp |