ZHCSMW8C October   2020  – August 2021 TMUX7211 , TMUX7212 , TMUX7213

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Source or Drain Continuous Current
    6. 7.6  ±15 V Dual Supply: Electrical Characteristics 
    7. 7.7  ±15 V Dual Supply: Switching Characteristics 
    8. 7.8  ±20 V Dual Supply: Electrical Characteristics
    9. 7.9  ±20 V Dual Supply: Switching Characteristics
    10. 7.10 44 V Single Supply: Electrical Characteristics 
    11. 7.11 44 V Single Supply: Switching Characteristics 
    12. 7.12 12 V Single Supply: Electrical Characteristics 
    13. 7.13 12 V Single Supply: Switching Characteristics 
    14. 7.14 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1  On-Resistance
    2. 8.2  Off-Leakage Current
    3. 8.3  On-Leakage Current
    4. 8.4  tON and tOFF Time
    5. 8.5  tON (VDD) Time
    6. 8.6  Propagation Delay
    7. 8.7  Charge Injection
    8. 8.8  Off Isolation
    9. 8.9  Channel-to-Channel Crosstalk
    10. 8.10 Bandwidth
    11. 8.11 THD + Noise
    12. 8.12 Power Supply Rejection Ratio (PSRR)
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Bidirectional Operation
      2. 9.3.2 Rail-to-Rail Operation
      3. 9.3.3 1.8 V Logic Compatible Inputs
      4. 9.3.4 Integrated Pull-Down Resistor on Logic Pins
      5. 9.3.5 Fail-Safe Logic
      6. 9.3.6 Latch-Up Immune
      7. 9.3.7 Ultra-Low Charge Injection
    4. 9.4 Device Functional Modes
    5. 9.5 Truth Tables
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 术语表
  14. 14Mechanical, Packaging, and Orderable Information

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4 Revision History

Changes from Revision B (April 2021) to Revision C (August 2021)

  • 为 TMUX7211、TMUX7212 和 TMUX7213 添加了 QFN 封装Go
  • Added ESD detail for RUM packageGo
  • Changed THD+N typical for 12V supplyGo
  • Added the Integrated Pull-Down Resistor on Logic Pins sectionGo
  • Updated the Ultra-Low Charge Injection sectionGo
  • Updated the TMUX721x Layout Example figure in the Layout Example sectionGo

Changes from Revision A (March 2021) to Revision B (April 2021)

  • Included Break-before-make time delay for TMUX7213  Go
  • Updated the Charge Injection Compensation figureGo

Changes from Revision * (December 2020) to Revision A (March 2021)

  • 向“特性”部分添加了对 WQFN 的高电流支持Go
  • Added thermal information for QFN packageGo
  • Updated IDC specs for TSSOP package in Source or Drain Continuous Current table Go
  • Added IDC specs for QFN package in Source or Drain Continuous Current table Go
  • Updated VDD rise time value from 100ns to 1µs in TON(VDD) test conditionGo
  • Updated CL value from 1nF to 100pF in Charge Injection test conditionGo
  • Updated Figure 7-10 Leakage Current vs. Temperature Go