ZHCSNX2 July   2021 TMUX1248

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (VDD = 5 V ±10 %), GND = 0 V unless otherwise specified.
    6. 6.6 Electrical Characteristics (VDD = 3.3 V ±10 %), GND = 0 V unless otherwise specified.
    7. 6.7 Electrical Characteristics (VDD = 1.8 V ±10 %), GND = 0 V unless otherwise specified.
    8. 6.8 Electrical Characteristics (VDD = 1.2 V ±10 %), GND = 0 V unless otherwise specified.
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 On-Resistance
    2. 7.2 Off-Leakage Current
    3. 7.3 On-Leakage Current
    4. 7.4 Transition Time
    5. 7.5 Break-Before-Make
    6. 7.6 Charge Injection
    7. 7.7 Off Isolation
    8. 7.8 Crosstalk
    9. 7.9 Bandwidth
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail to Rail Operation
      3. 8.3.3 1.8 V Logic Compatible Inputs
      4. 8.3.4 Fail-Safe Logic
    4. 8.4 Device Functional Modes
    5. 8.5 Truth Tables
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Layout Information
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

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6.7 Electrical Characteristics (VDD = 1.8 V ±10 %), GND = 0 V unless otherwise specified.

at TA = 25°C, VDD = 1.8 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0 V to VDD
ISD = 10 mA		 25°C 40 Ω
–40°C to +85°C 80 Ω
–40°C to +125°C 80 Ω
ΔRON On-resistance matching between channels VS = 0 V to VDD
ISD = 10 mA		 25°C 0.4 Ω
–40°C to +85°C 1.5 Ω
–40°C to +125°C 1.5 Ω
RON FLAT On-resistance flatness VS = 0 V to VDD
ISD = 10 mA		 25°C 35 Ω
IS(OFF) Source off leakage current(1) VDD = 1.98 V
Switch Off
VD = 1.8 V / 1 V
VS = 1 V / 1.8 V		 25°C ±75 nA
–40°C to +85°C –150 150 nA
–40°C to +125°C –175 175 nA
ID(ON)
IS(ON) 		Channel on leakage current VDD = 1.98 V
Switch On
VD = VS = 1.62 V / 1 V		 25°C ±200 nA
–40°C to +85°C –500 500 nA
–40°C to +125°C –750 750 nA
DIGITAL INPUTS
VIH Input logic high –40°C to +125°C 1.07 5.5 V
VIL Input logic low –40°C to +125°C 0 0.68 V
IIH
IIL 		Input leakage current 25°C ±0.005 µA
IIH
IIL 		Input leakage current –40°C to +125°C ±0.05 µA
CIN Logic input capacitance 25°C 1 pF
CIN Logic input capacitance –40°C to +125°C 2 pF
POWER SUPPLY
IDD VDD supply current Logic Inputs = 0 V or 5.5 V 25°C 0.002   µA
–40°C to +125°C 0.52 µA
DYNAMIC CHARACTERISTICS
tTRAN Switching time between channels VS = 1 V
RL = 200 Ω, CL = 15 pF		 25°C   24 ns
–40°C to +85°C   44 ns
–40°C to +125°C     45 ns
tOPEN (BBM) Break before make time VS = 1 V
RL = 200 Ω, CL = 15 pF		 25°C   16 ns
–40°C to +85°C 1     ns
–40°C to +125°C 1     ns
QC Charge Injection VS = VDD/2
RS = 0 Ω, CL = 1 nF		 25°C   –3   pC
OISO Off Isolation RL = 50 Ω, CL = 5 pF
f = 1 MHz		 25°C   –65   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz		 25°C   –45   dB
XTALK Crosstalk RL = 50 Ω, CL = 5 pF
f = 1 MHz		 25°C   –65   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz		 25°C   –45   dB
BW Bandwidth RL = 50 Ω, CL = 5 pF 25°C 250 MHz
CSOFF Source off capacitance f = 1 MHz 25°C 7 pF
CSON
CDON 		On capacitance f = 1 MHz 25°C 23 pF
(1) When VS is 1.8 V, VD is 1 V or when VS is 1 V, VD is 1.8 V.