SCDS424A December   2019  – March 2020 TMUX1237

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      TMUX1237 Block Diagram
      2.      Application Example
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (VDD = 5 V ±10 %), GND = 0 V unless otherwise specified.
    6. 6.6 Electrical Characteristics (VDD = 3.3 V ±10 %), GND = 0 V unless otherwise specified.
    7. 6.7 Electrical Characteristics (VDD = 1.8 V ±10 %), GND = 0 V unless otherwise specified.
    8. 6.8 Electrical Characteristics (VDD = 1.2 V ±10 %), GND = 0 V unless otherwise specified.
    9. 6.9 Typical Characteristics
  7. Parameter Measurement Information
    1. 7.1 On-Resistance
    2. 7.2 Off-Leakage Current
    3. 7.3 On-Leakage Current
    4. 7.4 Transition Time
    5. 7.5 Break-Before-Make
    6. 7.6 Charge Injection
    7. 7.7 Off Isolation
    8. 7.8 Crosstalk
    9. 7.9 Bandwidth
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail to Rail Operation
      3. 8.3.3 1.8 V Logic Compatible Inputs
      4. 8.3.4 Fail-Safe Logic
    4. 8.4 Device Functional Modes
    5. 8.5 Truth Tables
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Input Control for Power Amplifier
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Switchable Operational Amplifier Gain Setting
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Layout Information
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

Electrical Characteristics (VDD = 1.2 V ±10 %), GND = 0 V unless otherwise specified.

At TA = 25°C, VDD = 1.2 V (unless otherwise noted).
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0 V to VDD
IDS = 10 mA
25°C 70 Ω
–40°C to +85°C 105 Ω
–40°C to +125°C 105 Ω
ΔRON On-resistance matching between channels VS = 0 V to VDD
IDS = 10 mA
25°C 0.4 Ω
–40°C to +85°C 1.5 Ω
–40°C to +125°C 1.5 Ω
IS(OFF) Source off leakage current(1) VDD = 1.32 V
Switch Off
VD = 1.2 V / 1 V
VS = 1 V / 1.2 V
25°C ±75 nA
–40°C to +85°C –150 150 nA
–40°C to +125°C –175 175 nA
ID(ON)
IS(ON)
Channel on leakage current VDD = 1.32 V
Switch On
VD = VS = 1 V / 0.8 V
25°C ±200 nA
–40°C to +85°C –500 500 nA
–40°C to +125°C –750 750 nA
DIGITAL INPUTS
VIH Input logic high –40°C to +125°C 0.96 V
VIL Input logic low –40°C to +125°C 0.36 V
IIH
IIL
Input leakage current 25°C ±0.005 µA
IIH
IIL
Input leakage current –40°C to +125°C ±0.10 µA
CIN Digital input capacitance 25°C 1 pF
CIN Digital input capacitance –40°C to +125°C 2 pF
POWER SUPPLY
IDD VDD supply current Digital Inputs = 0 V or 5.5 V 25°C 0.002   µA
–40°C to +125°C 0.9 µA
DYNAMIC CHARACTERISTICS
tTRAN Switching time between channels VIN = VDD
VS = 1 V
RL = 200 Ω, CL = 15 pF
25°C   40 ns
–40°C to +85°C   300 ns
–40°C to +125°C     300 ns
tOPEN (BBM) Break before make time VS = 1 V
RL = 200 Ω, CL = 15 pF
25°C   425 ns
–40°C to +85°C 1     ns
–40°C to +125°C 1     ns
QC Charge Injection VS = (VDD + VSS)/2
RS = 0 Ω, CL = 1 nF
25°C   ±5 pC
OISO Off Isolation RL = 50 Ω, CL = 5 pF
f = 1 MHz
25°C   -64   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
25°C   -44   dB
XTALK Crosstalk RL = 50 Ω, CL = 5 pF
f = 1 MHz
25°C   -64   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
25°C   -44   dB
BW Bandwidth RL = 50 Ω, CL = 5 pF 25°C 250 MHz
CSOFF Source off capacitance f = 1 MHz 25°C 9 pF
CSON
CDON
On capacitance f = 1 MHz 25°C 23 pF
When VS is 1 V, VD is 1.2 V or when VS is 1.2 V, VD is 1 V.