SBOS321E March   2005  – April 2016 TLV3501 , TLV3502

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information: TLV3501
    5. 6.5 Thermal Information: TLV3502
    6. 6.6 Electrical Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Voltage
      2. 7.3.2 Input Overvoltage Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Adding External Hysteresis
    2. 8.2 Typical Application
      1. 8.2.1 Relaxation Oscillator
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 High-Speed Window Comparator
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 TI Precision Designs
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Related Links
    4. 11.4 Community Resource
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage Supply 5.5 V
Signal input terminal(2) (V−) − 0.3 (V+) + 0.3 V
Current Signal input terminal(2) 10 mA
Output short circuit(3) 74 mA
Temperature Operating, TA –40 125 °C
Junction, TJ 150 °C
Storage, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails must be current-limited to 10 mA or less.
(3) Short-circuit to ground, one comparator per package.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±3000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted).
MIN NOM MAX UNIT
VS Supply voltage 2.2 2.7 5.5 V
VIL Low-level input voltage, SHDN (comparator is enabled)(1) (V+) – 1.7 V
VIH High-level input voltage, SHDN (comparator is disabled)(1) (V+) – 0.9 V
TA Operating temperature –40 125 °C
(1) When the SHDN pin is within 0.9 V of the most positive supply, the part is disabled. When it is more than 1.7 V below the most positive supply, the part is enabled.

6.4 Thermal Information: TLV3501

THERMAL METRIC(1) TLV3501 UNIT
DBV (SOT-23) D (SOIC)
6 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 192.2 129.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 134.8 75.9 °C/W
RθJB Junction-to-board thermal resistance 37.1 69.8 °C/W
ψJT Junction-to-top characterization parameter 28.3 29.7 °C/W
ψJB Junction-to-board characterization parameter 36.7 69.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W

6.5 Thermal Information: TLV3502

THERMAL METRIC(1) TLV3502 UNIT
D (SOIC) DCN (SOT-23)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 116.4 191.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 61.7 43.9 °C/W
RθJB Junction-to-board thermal resistance 57 120.3 °C/W
ψJT Junction-to-top characterization parameter 18.5 14.4 °C/W
ψJB Junction-to-board characterization parameter 56.5 118.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.6 Electrical Characteristics

At TA = 25°C and VS = 2.7 V to 5.5 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage(1) VCM = 0 V, IO = 0 mA ±1 ±6.5 mV
dVOS/dT Input offset voltage vs temperature TA = –40°C to +125°C ±5 μV/°C
PSRR Input offset voltage vs power supply VS = 2.7 V to 5.5 V 100 400 μV/V
Input hysteresis 6 mV
INPUT BIAS CURRENT
IB Input bias current(2) VCM = VCC/2 ±2 ±10 pA
IOS Input offset current(2)(3) VCM = VCC/2 ±2 ±10 pA
INPUT VOLTAGE RANGE
VCM Common-mode voltage range (V−) − 0.2 (V+) − 0.2 V
CMRR Common-mode rejection ratio VCM = −0.2 V to (V+) + 0.2 V 57 70 dB
VCM = −0.2 V to (V+) + 0.2 V,
TA = −40°C to +125°C		 55
INPUT IMPEDANCE
Common-mode 1013 || 2 Ω || pF
Differential 1013 || 4 Ω || pF
OUTPUT
VOH, VOL Voltage output swing from rail IOUT = ±1 mA 30 50 mV
SHUTDOWN
tOFF Shutdown turnoff time 30 ns
tON Shutdown turnon time 100 ns
VL SHDN low threshold Comparator is enabled(4) (V+) − 1.7 V
VH SHDN high threshold Comparator is disabled(4) (V+) − 0.9 V
Input bias current of shutdown pin 2 pA
IQSD Quiescent current in shutdown 2 µA
POWER SUPPLY
VS Specified voltage 2.7 5.5 V
Operating voltage range Higher end 2.2 V
Lower end 5.5
IQ Quiescent current VS = 5 V, VO = High 3.2 5 mA
TEMPERATURE RANGE
Specified range –40 125 °C
Operating range –40 125 °C
(1) VOS is defined as the average of the positive and the negative switching thresholds.
(2) Not production tested.
(3) The difference between IB+ and IB–.
(4) When the shutdown pin is within 0.9 V of the most positive supply, the part is disabled. When it is more than 1.7 V below the most positive supply, the part is enabled.

6.7 Switching Characteristics

At TA = 25°C and VS = 2.7 V to 5.5 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
T(pd) Propagation delay time(1)(2) ΔVIN = 100 mV,
Overdrive = 20 mV		 At TA = 25°C 4.5 6.4 ns
At TA = −40°C to +125°C 7 ns
ΔVIN = 100 mV,
Overdrive = 5 mV		 At TA = 25°C 7.5 10 ns
At TA = −40°C to +125°C 12 ns
Δt(SKEW) Propagation delay skew(3) ΔVIN = 100 mV, overdrive = 20 mV 0.5 ns
fMAX Maximum toggle frequency Overdrive = 50 mV, VS = 5 V 80 MHz
tR Rise time(4) 1.5 ns
tF Fall time(4) 1.5 ns
(1) Not production tested.
(2) Propagation delay cannot be accurately measured with low overdrive on automatic test equipment. This parameter is ensured by characterization and testing at 100-mV overdrive.
(3) The difference between the propagation delay going high and the propagation delay going low.
(4) Measured between 10% of VS and 90% of VS.

6.8 Typical Characteristics

At TA = 25°C, VS = 5 V, and input overdrive = 100 mV, unless otherwise noted.
TLV3501 TLV3502 sbos321_typchar_1.gif
Figure 1. Output Response for Various Overdrive Voltages (Rising)
TLV3501 TLV3502 sbos321_typchar_3.gif
VOD = 20 mV
Figure 3. Propagation Delay vs Temperature
TLV3501 TLV3502 sbos321_typchar_5.gif
VOD = 20 mV
Figure 5. Propagation Delay vs Capacitive Load
TLV3501 TLV3502 sbos321_typchar_7.gif
VCM = 1 V VOD = 20 mV
Figure 7. Propagation Delay vs Supply Voltage
TLV3501 TLV3502 sbos321_typchar_9.gif
VDD = 5 V VIN = 20 mVPP
Figure 9. Response to 50-MHz Sine Wave
TLV3501 TLV3502 sbos321_typchar_11.gif
Figure 11. Quiescent Current vs Supply Voltage
TLV3501 TLV3502 sbos321_typchar_13.gif
Figure 13. Quiescent Current vs Shutdown Voltage
TLV3501 TLV3502 sbos321_typchar_2.gif
Figure 2. Output Response for Various Overdrive Voltages (Falling)
TLV3501 TLV3502 sbos321_typchar_4.gif
VOD = 50 mV
Figure 4. Propagation Delay vs Temperature
TLV3501 TLV3502 sbos321_typchar_6.gif
VOD = 50 mV
Figure 6. Propagation Delay vs Capacitive Load
TLV3501 TLV3502 sbos321_typchar_8.gif
Figure 8. Wake-Up Delay vs Temperature
TLV3501 TLV3502 sbos321_typchar_10.gif
Figure 10. Response to 100-MHz Sine Wave (±2.5-V Dual Supply into 50-Ω Oscilloscope Input)
TLV3501 TLV3502 sbos321_typchar_12.gif
Figure 12. Quiescent Current vs Temperature
TLV3501 TLV3502 sbos321_typchar_14.gif
Figure 14. Quiescent Current vs Frequency