SCES204Q April   1999  – March 2017 SN74LVC2G125

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics: TA = -40°C to +85°C
    7. 6.7 Switching Characteristics: TA = -40°C to +125°C
    8. 6.8 Operating Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Balanced High-Drive CMOS Push-Pull Outputs
      2. 8.3.2 Standard CMOS Inputs
      3. 8.3.3 Clamp Diodes
      4. 8.3.4 Partial Power Down (Ioff)
      5. 8.3.5 Over-voltage Tolerant Inputs
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DCU|8
  • YZP|8
  • DCT|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

See(1)
MIN MAX UNIT
VCC Supply voltage –0.5 6.5 V
VI Input voltage (2) –0.5 6.5 V
VO Voltage range applied to any output in the high-impedance or power-off state(2) –0.5 6.5 V
VO Voltage range applied to any output in the high or low state(2)(3) –0.5 VCC + 0.5 V
IIK Input clamp current VI < 0 –50 mA
IOK Output clamp current VO < 0 –50 mA
IO Continuous output current ±50 mA
Continuous current through VCC or GND ±100 mA
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(3) The value of VCC is provided in the Recommended Operating Conditions table.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) 2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) 1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over recommended operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage Operating 1.65 5.5 V
Data retention only 1.5
VIH High-level input voltage VCC = 1.65 V to 1.95 V 0.65 × VCC V
VCC = 2.3 V to 2.7 V 1.7
VCC = 3 V to 3.6 V 2
VCC = 4.5 V to 5.5 V 0.7 × VCC
VIL Low-level input voltage VCC = 1.65 V to 1.95 V 0.35 × VCC V
VCC = 2.3 V to 2.7 V 0.7
VCC = 3 V to 3.6 V 0.8
VCC = 4.5 V to 5.5 V 0.3 × VCC
VI Input voltage 0 5.5 V
VO Output voltage High or low state 0 VCC V
3-state 0 5.5
IOH High-level output current VCC = 1.65 V –4 mA
VCC = 2.3 V –8
VCC = 3 V –16
–24
VCC = 4.5 V –32
IOL Low-level output current VCC = 1.65 V 4 mA
VCC = 2.3 V 8
VCC = 3 V 16
24
VCC = 4.5 V 32
Δt/Δv Input transition rise or fall rate VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V 20 ns/V
VCC = 3.3 V ± 0.3 V 10
VCC = 5 V ± 0.5 V 5
TA Operating free-air temperature –40 125 °C
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs, SCBA004.

6.4 Thermal Information

THERMAL METRIC(1) SN74LVC2G125 UNIT
DCT (SM8) DCU (VSSOP) YZP (DSBGA)
8 PINS 8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 199.0 217.8 99.8 °C/W
RθJCtop Junction-to-case (top) thermal resistance 89.5 98.3 1.0 °C/W
RθJB Junction-to-board thermal resistance 118.7 138.7 29.6 °C/W
ψJT Junction-to-top characterization parameter 14.3 34.6 0.5 °C/W
ψJB Junction-to-board characterization parameter 117.4 138.2 29.8 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC TA = –40°C to +85°C TA = –40°C to +125°C UNIT
MIN TYP(1) MAX MIN TYP(1) MAX
VOH IOH = –100 µA 1.65 V to 5.5 V VCC – 0.1 VCC – 0.1 V
IOH = –4 mA 1.65 V 1.2 1.2
IOH = –8 mA 1.8 V 1.4
2.3 V 1.9 1.9
IOH = –16 mA 3 V 2.4 2.4
IOH = –24 mA 2.3 2.3
IOH = –32 mA 4.5 V 3.8 3.8
VOL IOL = 100 µA 1.65 V to 5.5 V 0.1 0.1 V
IOL = 4 mA 1.65 V 0.45 0.45
IOL = 8 mA 1.8 V 0.45
2.3 V 0.3 0.3
IOL = 16 mA 3 V 0.4 0.4
IOL = 24 mA 0.55 0.55
IOL = 32 mA 4.5 V 0.55 0.75
II A or OE inputs VI = 5.5 V or GND 0 to 5.5 V ±5 ±5 µA
Ioff VI or VO = 5.5 V 0 ±10 ±10 µA
IOZ VO = 0 to 5.5 V 3.6 V 10 10 µA
ICC VI = 5.5 V or GND, IO = 0 1.65 V to 5.5 V 10 10 µA
ΔICC One input at VCC – 0.6 V,
Other inputs at VCC or GND		 3 V to 5.5 V 500 500 µA
Ci Data inputs VI = VCC or GND 3.3 V 3.5 3.5 pF
Control inputs 4 4
Co VO = VCC or GND 3.3 V 6.5 6.5 pF
(1) All typical values are at VCC = 3.3 V, TA = 25°C.

6.6 Switching Characteristics: TA = –40°C to +85°C

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 TA = –40°C to +85°C UNIT
VCC = 1.8 V
± 0.15 V		 VCC = 2.5 V
± 0.2 V		 VCC = 3.3 V
± 0.3 V		 VCC = 5 V
± 0.5 V
MIN MAX MIN MAX MIN MAX MIN MAX
tpd A Y 3.3 9.1 1.5 4.8 1.4 4.3 1 3.7 ns
ten OE Y 4 9.9 1.9 5.6 1.2 4.7 1.2 3.8 ns
tdis OE Y 1.5 11.6 1 5.8 1.4 4.6 1 3.4 ns

6.7 Switching Characteristics: TA = –40°C to +125°C

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 TA = –40°C to +125°C UNIT
VCC = 1.8 V
± 0.15 V		 VCC = 2.5 V
± 0.2 V		 VCC = 3.3 V
± 0.3 V		 VCC = 5 V
± 0.5 V
MIN MAX MIN MAX MIN MAX MIN MAX
tpd A Y 3.3 10.1 1.5 5.8 1.4 5.3 1 4.2 ns
ten OE Y 4 10.9 1.9 6.6 1.2 5.7 1.2 4.3 ns
tdis OE Y 1.5 12.6 1 6.8 1.4 5.6 1 3.9 ns

6.8 Operating Characteristics

TA = 25°
PARAMETER TEST
CONDITIONS		 VCC = 1.8 V VCC = 2.5 V VCC = 3.3 V VCC = 5 V UNIT
TYP TYP TYP TYP
Cpd Power dissipation
capacitance		 Outputs enabled f = 10 MHz 19 19 20 22 pF
Outputs disabled 2 2 2 3

6.9 Typical Characteristics

SN74LVC2G125 D001_SCES223.gif Figure 1. TPD Across Temperature at 3.3 V VCC
SN74LVC2G125 D002_SCES223.gif Figure 2. TPD Across VCC at 25°C