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  • SN74HCS74-Q1 具有清零和预设功能的汽车类施密特触发输入双路正边沿触发式 D 型触发器

    • ZHCSJY7E April   2019  – December 2021 SN74HCS74-Q1

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  • SN74HCS74-Q1 具有清零和预设功能的汽车类施密特触发输入双路正边沿触发式 D 型触发器
  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Timing Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Balanced CMOS Push-Pull Outputs
      2. 8.3.2 CMOS Schmitt-Trigger Inputs
      3. 8.3.3 Clamp Diode Structure
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Power Considerations
        2. 9.2.1.2 Input Considerations
        3. 9.2.1.3 Output Considerations
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information
  14. 重要声明

封装选项

机械数据 (封装 | 引脚)
  • DYY|14
    • MPSS114C
  • PW|14
    • MPDS360A
  • BQA|14
    • MPQF538A
  • D|14
    • MPDS177H
散热焊盘机械数据 (封装 | 引脚)
  • BQA|14
    • QFND686
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SN74HCS74-Q1 具有清零和预设功能的汽车类施密特触发输入双路正边沿触发式 D 型触发器

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

  • 符合面向汽车应用的 AEC-Q100 标准：
    • 器件温度等级 1：
      –40°C 至 +125°C，TA
    • 器件 HBM ESD 分类等级 2
    • 器件 CDM ESD 分类等级 C6
  • 宽工作电压范围：2V 至 6V
  • 施密特触发输入可实现慢速或高噪声输入信号
  • 低功耗
    • ICC 典型值为 100nA
    • 输入泄漏电流典型值为 ±100nA
  • 电压为 6V 时，输出驱动为 ±7.8mA

2 应用

  • 将瞬时开关转换为拨动开关
  • 在控制器复位期间保持信号
  • 输入慢速边沿速率信号
  • 可在高噪声环境中运行
  • 将时钟信号一分为二

3 说明

该器件包含两个独立的 D 型正缘触发触发器。所有输入均包括施密特触发，可实现慢速或高噪声输入信号。将预设 (PRE) 输入设为低电平，会输出高电平。将清零 (CLR) 输入设为低电平，会重新输出低电平。预设和清零功能是异步的，并且不依赖于其他输入的电平。当 PRE 和 CLR 处于非活动状态（高电平）时，数据 (D) 输入处满足设置时间要求的数据将传输到时钟 (CLK) 脉冲正向缘上的输出（Q，Q）处。时钟触发在一定电压电平下发生，并且不与输入 (CLK) 信号的上升时间直接相关。经过保持时间间隔后，可以更改数据 (D) 输入处的数据而不影响输出（Q，Q）处的电平。

器件信息
器件型号 封装(1) 封装尺寸（标称值）
SN74HCS74PW-Q1 TSSOP (14) 5.00mm × 4.40mm
SN74HCS74D-Q1 SOIC (14) 8.70mm × 3.90mm
SN74HCS74BQA-Q1 WQFN (14) 3.00mm × 2.50mm
SN74HCS74DYY-Q1 SOT-23-THIN (14) 2.00 mm x 4.20 mm
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。
GUID-F06C44E8-F43D-4047-8B2A-320DF7F75729-low.gif施密特触发输入的优势

4 Revision History

Changes from Revision D (March 2021) to Revision E (December 2021)

  • 将 DYY 状态从“预发布”更改为“正在供货”Go
  • Added DYY package information to Pin Configuration and Functions Go
  • Added DYY package to Thermal Information tableGo

Changes from Revision C (November 2020) to Revision D (March 2021)

  • 将 BQA 状态从“预发布”更改为“正在供货”Go

Changes from Revision B (August 2019) to Revision C (November 2020)

  • 更新了整个文档中的表格、图和交叉参考的编号格式Go
  • 向“器件信息”添加了 BQA 封装信息Go
  • Added BQA pinout diagram and package information to Pin Configuration and Functions Go
  • Added BQA package to Thermal Information tableGo

Changes from Revision A (June 2019) to Revision B (August 2019)

  • 向“器件信息”添加了 D 封装信息Go
  • Added D package information to Pin Configuration and Functions Go
  • Added D package column to Thermal Information tableGo

Changes from Revision * (April 2019) to Revision A (June 2019)

  • 已将数据表从产品定制转换为产品目录Go

5 Pin Configuration and Functions

GUID-7B2146FD-DB98-4805-AE9A-4367DEE7C744-low.gifD, PW or DYY Package
14-Pin SOIC, TSSOP or SOT
Top View
GUID-20201105-CA0I-R51S-5DRT-TCZRPR5P0NLB-low.gifBQA Package
14-Pin WQFN
Top View

Pin Functions

PINTYPEDESCRIPTION
NAMENO.
1 CLR1InputClear for channel 1, active low
1D2InputData for channel 1
1CLK3InputClock for channel 1, rising edge triggered
1 PRE4InputPreset for channel 1, active low
1Q5OutputOutput for channel 1
1 Q6OutputInverted output for channel 1
GND7—Ground
2 Q8OutputInverted output for channel 2
2Q9OutputOutput for channel 2
2 PRE10InputPreset for channel 2, active low
2CLK11InputClock for channel 2, rising edge triggered
2D12InputData for channel 2
2 CLR13InputClear for channel 2, active low
VCC14—Positive supply
Thermal Pad(1) — The thermal pad can be connected to GND or left floating. Do not connect to any other signal or supply
(1) BQA package only.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage –0.5 7 V
IIK Input clamp current(2) VI < –0.5 V or VI > VCC + 0.5 V ±20 mA
IOK Output clamp current(2) VI < –0.5 V or VI > VCC + 0.5 V ±20 mA
IO Continuous output current VO = 0 to VCC ±35 mA
Continuous current through VCC or GND ±70 mA
TJ Junction temperature(3) 150 °C
Tstg Storage temperature –65 150 °C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute maximum ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If briefly operating outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not sustain damage, but it may not be fully functional. Operating the device in this manner may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
(3) Assured by design.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) HBM ESD Classification Level 2 ±4000 V
Charged device model (CDM), per AEC Q100-011 CDM ESD Classification Level C6 ±1500
(1) AEC Q100-002 indicate that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCC Supply voltage 2 5 6 V
VI Input voltage 0 VCC V
VO Output voltage 0 VCC V
TA Ambient temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) SN74HCS74-Q1 UNIT
PW (TSSOP) D (SOIC) BQA (WQFN) DYY (SOT)
14 PINS 14 PINS 14 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 151.7 133.6  109.7 236.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 79.4 89.0 111.0 143.2 °C/W
RθJB Junction-to-board thermal resistance 94.7 89.5 77.9 146.0 °C/W
ΨJT Junction-to-top characterization parameter 25.2 45.5 20.2 29.5 °C/W
ΨJB Junction-to-board characterization parameter 94.1 89.1 77.8 145.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A 56.6 N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over operating free-air temperature range; typical values measured at TA = 25°C (unless otherwise noted).
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VT+ Positive switching threshold 2 V 0.7 1.5 V
4.5 V 1.7 3.15
6 V 2.1 4.2
VT- Negative switching threshold 2 V 0.3 1.0 V
4.5 V 0.9 2.2
6 V 1.2 3.0
ΔVT Hysteresis (VT+ - VT-)(1) 2 V 0.2 1.0 V
4.5 V 0.4 1.4
6 V 0.6 1.6
VOH High-level output voltage VI = VIH or VIL IOH = -20 µA 2 V to 6 V VCC – 0.1 VCC – 0.002 V
IOH = -6 mA 4.5 V 4.0 4.3
IOH = -7.8 mA 6 V 5.4 5.75
VOL Low-level output voltage VI = VIH or VIL IOL = 20 µA 2 V to 6 V 0.002 0.1 V
IOL = 6 mA 4.5 V 0.18 0.30
IOL = 7.8 mA 6 V 0.22 0.33
II Input leakage current VI = VCC or 0 6 V ±100 ±1000 nA
ICC Supply current VI = VCC or 0, IO = 0 6 V 0.1 2 µA
Ci Input capacitance 2 V to 6 V 5 pF
Cpd Power dissipation capacitance per gate No load 2 V to 6 V 10 pF
(1) Guaranteed by design.

6.6 Switching Characteristics

CL = 50 pF; over operating free-air temperature range; typical values measured at TA = 25°C (unless otherwise noted). See Parameter Measurement Information
PARAMETER FROM (INPUT) TO (OUTPUT) VCC MIN TYP MAX UNIT
fmax Max switching frequency 2 V 18 31 MHz
4.5 V 45 95
6 V 65 105
tpd Propagation delay PRE or CLR Q or Q 2 V 19 42 ns
4.5 V 8 19
6 V 7 15
CLK Q or Q 2 V 19 42 ns
4.5 V 8 19
6 V 7 15
tt Transition-time Q or Q 2 V 9 16 ns
4.5 V 5 9
6 V 4 8

6.7 Timing Characteristics

CL = 50 pF; over operating free-air temperature range (unless otherwise noted). See Parameter Measurement Information.
PARAMETER VCC MIN MAX UNIT
fclock Clock frequency 2 V 18 MHz
4.5 V 45
6 V 65
tw Pulse duration PRE or CLR low 2 V 11 ns
4.5 V 11
6 V 11
CLK high or low 2 V 14 ns
4.5 V 12
6 V 11
tsu Setup time before CLK high Data 2 V 24 ns
4.5 V 9
6 V 6
PRE or CLR inactive 2 V 7 ns
4.5 V 5
6 V 5
th Hold time Data after CLK↑ 2 V 0 ns
4.5 V 0
6 V 0

 
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