SCDS001O November   1992  – September 2015 SN74CBT3244

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information Package
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DGV|20
  • DB|20
  • DBQ|20
  • DW|20
  • PW|20
  • RGY|20
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage, VCC –0.5 7 V
Input voltage, VI (2) –0.5 7 V
Continuous channel current 128 mA
Clamp current, IK (VI/O < 0) –50 mA
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(3) The package thermal impedance is calculated in accordance with JESD 51-7.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage 4.5 5.5 V
VIH High-level control input voltage 2 V
VIL Low-level control input voltage 0.8 V
TA Operating free-air temperature –40 85 °C
(1) All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.

6.4 Thermal Information Package

THERMAL METRIC(1)(3) SN74CBT3244 UNIT
DB
(SSOP)
DBQ (SSOP) DGV (TVSOP) PW (TSSOP) RGY
(VQFN)
20 PINS 20 PINS 20 PINS 20 PINS 20 PINS
RθJA Junction-to-ambient thermal resistance 70 68 92 83 37 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VIK VCC = 4.5 V II = –18 mA –1.2 V
II VCC = 5.5 V VI = 5.5 V or GND ±5 µA
ICC VCC = 5.5 V IO = 0, VI = VCC or GND 50 µA
ΔICC(2) Control inputs VCC = 5.5 V One input at 3.4 V, Other inputs at VCC or GND 3.5 mA
Ci Control inputs VI = 3 V or 0 3 pF
Cio(OFF) VO = 3 V or 0 OE = VCC 6 pF
ron(3) VCC = 4.5 V VI = 0 V II = 64 mA 5 7 Ω
II = 30 mA 5 7
VI = 2.4 V II = 15 mA 10 15
(1) All typical values are at VCC = 5 V, TA = 25°C.
(2) This is the increase in supply current for each input that is at the specified TTL voltage level, rather than VCC or GND.
(3) Measured by the voltage drop between the A and the B terminals at the indicated current through the switch. On-state resistance is determined by the lowest voltage of the two (A or B) terminals.

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER FROM (INPUT) TO (OUTPUT) MIN TYP MAX UNIT
tpd(1) A or B B or A 0.25 ns
ten OE A or B 1 8.9 ns
tdis OE A or B 1 7.4 ns
(1) This propagation delay is the calculated RC time constant of the typical on-state resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance).

6.7 Typical Characteristics

SN74CBT3244 D001_SCDS001.gif
Note device variation mentioned in Electrical Characteristics
Figure 1. ICC variation With Temperature