ZHCS233D May   2011  – May 2017 SN65HVD101 , SN65HVD102

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Wake-up Detection
      2. 9.3.2 Current Limit Indication - Short Circuit Current Detection
      3. 9.3.3 Active Current Limit Condition: VTHL > VCQ ≥ VTHH
      4. 9.3.4 Inactive Current Limit Condition: VTHL < VCQ < VTHH
      5. 9.3.5 Over-temperature Detection
      6. 9.3.6 CQ Current-limit Adjustment
      7. 9.3.7 Transceiver Function Tables
      8. 9.3.8 Voltage Regulator (Not Available in SN65HVD102)
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Transceiver Configuration (SN65HVD101)
        2. 10.2.2.2 Maximum Ambient Temperature Check
        3. 10.2.2.3 Transient Protection
        4. 10.2.2.4 TVS Evaluation
      3. 10.2.3 Application Curves
    3. 10.3 System Examples
      1. 10.3.1 Driver for Incandescent Lamp Loads
      2. 10.3.2 Driver for Inductive Loads
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 相关链接
    2. 13.2 接收文档更新通知
    3. 13.3 社区资源
    4. 13.4 商标
    5. 13.5 静电放电警告
    6. 13.6 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Line voltage L+, CQ Steady state –40 40(2) (3) V
Transient pulse width <100 µs –50 50 V
Voltage difference |VL+ – VCQ| 40
Supply voltage VCC –0.3 6 V
Input voltage TX, EN, VCC_SET, ILIMADJ, –0.3 6 V
Output voltage RX, CUR_OK, WAKE, PWR_OK –0.3 6 V
Output current RX, CUR_OK, WAKE, PWR_OK –5 5 mA
Storage temperature, Tstg –65 150 °C
Junction temperature, TJ 180 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with reference to the GND pin, unless otherwise specified.
(3) GND pin and L– line should be at the same DC potential

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM, all pins), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VL+ Line voltage(1) 9 24 30 V
VCC Logic supply voltage (3.3V nominal) 3 3.3 3.6 V
VCC Logic supply voltage (5V nominal) 4.5 5 5.5 V
VIL Logic low input voltage 0.8 V
VIH Logic high input voltage 2 V
IO Logic output current –4 4 mA
ICC(OUT) Logic supply current (HVD101) 20 mA
IO(LIM) CQ driver output current limit 100 450 mA
RSET External resistor for CQ current limit 0 20 kΩ
CCOMP Compensation capacitor for voltage regulator (HVD101) 3.3 µF
1/tBIT Signaling rate IO-Link mode 250 kbps
SIO mode 10
TA Ambient temperature –40 105 °C
TJ Junction temperature –40 150 °C
(1) These devices will operate with line voltage as low as 9V and as high as 36V, however, the parametric performance is optimized for the IO-Link specified supply voltage range of 18V to 30V.

7.4 Thermal Information

THERMAL METRIC(1) SN65HVD10x UNITS
RGB 20 PINS
RθJA Junction-to-ambient thermal resistance 33.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 36.6
RθJB Junction-to-board thermal resistance 10.3
ψJT Junction-to-top characterization parameter 0.4
ψJB Junction-to-board characterization parameter 10.3
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.3
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

over all operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Driver
IIN Input current (TX, EN) VIN = 0V to VCC –100 100 µA
VRQH Residual voltage across the driver high side switch ICQ = –250 mA 18 < VL+ 1.5 3 V
VL+ < 18 3.5 V
ICQ = –200 mA 18 < VL+ 2 V
VL+ < 18 2.5 V
VRQL Residual voltage across the driver low side switch ICQ = 250 mA 18 < VL+ 1.5 3 V
VL+ < 18 3.5 V
ICQ = 200 mA 18 < VL+ 2 V
VL+ < 18 2.5 V
|IO(LIM)| Driver output current limit RSET = 20 kΩ 60 95 130 mA
RSET = 0 kΩ 300 400 480 mA
I(OZ) CQ leakage current with EN = L VCQ = 8 V –2 2 µA
Receiver
VTHH Input threshold “H” 18 V < VL+ < 30 V 10.5 13 V
VTHL Input threshold “L” 8 11.5 V
VHYS Receiver Hysteresis (VTHH – VTHL) 0.5 1 V
VTHH Input threshold “H” 9 V < VL+ < 18 V Note (1) Note(2) V
VTHL Input threshold “L” Note (3) Note(4) V
VHYS Receiver Hysteresis (VTHH–VTHL) 0.25 V
VOL Output low voltage RX IOL = 4 mA 0.4 V
OD outputs IOL = 1 mA 0.4
VOH Output high voltage RX IOH = –4 mA VCC–0.5 V
IOZ Output leakage current OD outputs Output in Z state, VO = VCC 0.03 1 µA
Protection Thresholds
VPG1 VL+ threshold for PWR_OK 8 10 V
VPG2 VCC threshold for PWR_OK VCC Set = GND 2.45 2.75 3 V
VCC Set = OPEN 3.9 4.25 4.6
VPOR1 Power-on Reset for VL+ 6 V
VPOR2 Power-on Reset for VCC 2.5 V
Voltage Regulator (HVD101)
VCC_OUT Voltage regulator output 9 V < VL+ < 30 V VCC SET = OPEN 4.5 5 5.5 V
VCC SET = GND 3 3.3 3.6
VDROP Voltage regulator drop-out voltage (VL+ – VCC_OUT ) ICC = 20 mA load current 3.2 3.9 V
Line regulation (dVCC_OUT /dL+) 9 V < VL+ < 30 V, IVCC = 1 mA 4 mV/V
Load regulation (dVCC_OUT /VCC_OUT) VL+ = 24 V,
IVCC = 100 µA to 20 mA 		1.3% 5%
PSRR Power Supply Rejection Ratio 100 kHz, IVCC = 20 mA 30 40 dB
Supply Current
IL+ Quiescent supply current Driver disabled, No Load HVD102 1 2 mA
HVD101 1.3 3
Dynamic supply current HVD102 2
HVD101 1.5
(1) VTHH(min) = 5V + (11/18)[VL+ - 9V]
(2) VTHH(max) = 6.5V + (13/18)[VL+ - 9V]
(3) VTHL(min) = 4V + (8/18)[VL+ -9V]
(4) VTHL(max) = 6V + (11/18)[VL+ -9V]

7.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Driver
tPLH, tPHL Driver propagation delay TX to CQ Figure 1, Figure 2, Figure 3,
RL= 2kΩ
CL = 5 nF
RSET = 0 Ω		 1 2 µs
tP(skew) Driver propagation delay skew 0.2 µs
tPZH, tPZL Driver enable delay (EN to CQ) 18 V < VL+ < 30 V 5 µs
9 V < VL+ < 18 V 8
tPHZ, tPLZ Driver disable delay 18 V < VL+ < 30 V 5 µs
VL+ < 18 V 8
tr, tf Driver output rise, tall time 18 V < VL+ 869 ns
|tr – tf| Difference in rise and fall time 300
Receiver
tWU1 Wake-up recognition begin Figure 6 45 60 75 µs
tWU2 Wake-up recognition end 85 100 135
tpWAKE Wake-up output delay 155
tND Noise suppression time(1) 250 ns
tPR Receiver propagation delay Figure 4 18 V < VL+ 300 600 ns
VL+ < 18 V 800
Protection Thresholds
TSD Shutdown temperature Die temperature 160 175 190 °C
TRE Re-enable temperature(2) 110 125 140
Thermal warning temperature (TEMP_OK) 120 135 150
tpSC Current limit indicator delay 85 175 µs
(1) Noise suppression time is defined as the permissible duration of a receive signal above/below the detection threshold without detection taking place.
(2) TRE is always less than TWARN so TEMP_OK is de-asserted (high impedance) when the device is re-enabled.

7.7 Typical Characteristics

SN65HVD101 SN65HVD102 RX_VL_SLLSE84.gif
Figure 1. Receiver Threshold Boundaries
SN65HVD101 SN65HVD102 Ilim_Rset_SLLSE84.gif
Figure 2. Typical Current Limit Characteristics