ZHCSD28C November 2012 – December 2014 RF430FRL152H , RF430FRL153H , RF430FRL154H
PRODUCTION DATA.
Figure 7-1 Application Circuit
Table 7-1 lists the bill of materials for this application.
| Name | Value | Description |
|---|---|---|
| L1 | 3 µH | RF inductance (nominal) |
| C1 | 8.2 pF | RF tuning capacitor (nominal) |
| C2 | 2.2 µF | Decoupling cap at VDDSW |
| C3 | 100 nF | Decoupling cap at VDDB |
| C4 | 10 nF | Charge pump capacitor |
| C5 | 100 nF | Decoupling cap at VDD2X |
| C6 | 10 nF | Decoupling cap at RST |
| C7 | 1µF | Bypass capacitor between SVSS and VSS |
| C8 | 100 nF | Decoupling cap at VDD |
| C9 | 100 nF | Decoupling cap at VDDH |
| B1 | 1.5 V | Battery |
| R2 | 100 kΩ | Reference resistor |