SBOS392I August   2007  – April 2026

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Thermal Hysteresis
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Start-Up Time
      2. 8.3.2 Low Temperature Drift
      3. 8.3.3 Power Dissipation
      4. 8.3.4 Noise Performance
    4. 8.4 Device Functional Modes
  10. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 REF3312 in a Bipolar Signal-Chain Configuration
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Op Amp Level-Shift Design
          2. 9.2.1.2.2 Differential Input Attenuator Design
          3. 9.2.1.2.3 Input Filtering
          4. 9.2.1.2.4 Component Selection
            1. 9.2.1.2.4.1 Voltage References
            2. 9.2.1.2.4.2 Op Amp
          5. 9.2.1.2.5 Input Attenuation and Level Shifting
          6. 9.2.1.2.6 Input Filtering
          7. 9.2.1.2.7 Passive Component Tolerances and Materials
        3. 9.2.1.3 Application Curves
          1. 9.2.1.3.1 DC Performance
          2. 9.2.1.3.2 AC Performance
    3. 9.3 Power-Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
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8.3.2 Low Temperature Drift

The REF33xx is designed for minimal drift error, defined as the change in output voltage over temperature. The drift is calculated using the box method, as described in Equation 2:

Equation 2. D r i f t = V O U T M A X - V O U T M I N V O U T × T e m p e r a t u r e   R a n g e × 10 6 p p m