SBOS303D June   2004  – December 2016 OPA820

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: VS = ±5 V
    6. 7.6 Electrical Characteristics: VS = 5 V
    7. 7.7 Typical Characteristics
      1. 7.7.1 ±5-V Supply Voltage
      2. 7.7.2 5-V Supply Voltage
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Feature Description
      1. 9.2.1 Input and ESD Protection
      2. 9.2.2 Bandwidth versus Gain
      3. 9.2.3 Output Drive Capability
      4. 9.2.4 Driving Capacitive Loads
      5. 9.2.5 Distortion Performance
      6. 9.2.6 Noise Performance
      7. 9.2.7 DC Offset Control
      8. 9.2.8 Thermal Analysis
    3. 9.3 Device Functional Modes
      1. 9.3.1 Wideband Noninverting Operation
      2. 9.3.2 Wideband Inverting Operation
      3. 9.3.3 Wideband Single-Supply Operation
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Optimizing Resistor Values
    2. 10.2 Typical Applications
      1. 10.2.1 Active Filter Design
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 High-Q Bandpass Filter Design Procedure
          2. 10.2.1.2.2 Low-Pass Butterworth Filter Design Procedure
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Buffering High-Performance ADCs
      3. 10.2.3 Video Line Driving
      4. 10.2.4 Single Differential Op Amp
      5. 10.2.5 Triple Differencing Op Amp (Instrumentation Topology)
      6. 10.2.6 DAC Transimpedance Amplifier
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Minimizing Parasitic Capacitance
      2. 12.1.2 Minimizing Distance from Power Supply to Decoupling Capacitors
      3. 12.1.3 Selecting and Placing External Components
      4. 12.1.4 Connecting Other Wideband Devices
      5. 12.1.5 Socketing
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Design-In Tools
        1. 13.1.1.1 Demonstration Fixtures
        2. 13.1.1.2 Macromodels and Applications Support
      2. 13.1.2 Development Support
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Community Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • D|8
  • DBV|5
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 Revision History

Changes from C Revision (August 2008) to D Revision

  • Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information sectionGo
  • Deleted Ordering Information table; see Package Option Addendum at the end of the data sheetGo
  • Deleted Lead temperature (soldering, 300°C maximum) from Absolute Maximum Ratings tableGo
  • Added Thermal Information tableGo
  • Changed Open-loop voltage gain test condition in Electrical Characteristics: VS = ±5 V table From: VO To: VCMGo
  • Changed Open-loop voltage gain test condition in Electrical Characteristics: VS = 5 V table From: VO To: VCMGo
  • Changed R2 From: 505 Ω To: 517 Ω, C1 From: 150 pF To: 100 pF, and C2 From: 100 pF To: 160 pF in 5-MHz Butterworth Low-Pass Active Filter imageGo

Changes from B Revision (March 2006) to C Revision

  • Changed Storage Temperature minimum value from –40°C to –65°CGo

Changes from A Revision (July 2004) to B Revision

  • Changed the board part number in the Design-In Tools sectionGo