ZHCSIT2F September 2010 – September 2018 MSP430F5304 , MSP430F5308 , MSP430F5309 , MSP430F5310
PRODUCTION DATA.
| PARAMETER | TJ | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| DVCC(PGM/ERASE) | Program or erase supply voltage | 1.8 | 3.6 | V | ||
| tREADMARGIN | Read access time during margin mode | 200 | ns | |||
| IPGM | Supply current from DVCC during program | 3 | 5 | mA | ||
| IERASE | Supply current from DVCC during erase | 2 | 6.5 | mA | ||
| IMERASE, IBANK | Supply current from DVCC during mass erase or bank erase | 2 | 6.5 | mA | ||
| tCPT | Cumulative program time(1) | 16 | ms | |||
| Program and erase endurance | 104 | 105 | cycles | |||
| tRetention | Data retention duration | 25°C | 100 | years | ||
| tWord | Word or byte program time(2) | 64 | 85 | µs | ||
| tBlock, 0 | Block program time for first byte or word(2) | 49 | 65 | µs | ||
| tBlock, 1–(N–1) | Block program time for each additional byte or word, except for last byte or word(2) | 37 | 49 | µs | ||
| tBlock, N | Block program time for last byte or word(2) | 55 | 73 | µs | ||
| tErase | Erase time for segment, mass erase, and bank erase when available(2) | 23 | 32 | ms | ||