SNOSB28H August   2010  – October 2026 LMP8640 , LMP8640HV

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics 2.7V
    6. 6.6 Electrical Characteristics 5 V
    7. 6.7 Electrical Characteristics 12V
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Selection of Sense Resistor
        1. 7.3.1.1 Resistor Power Rating and Thermal Issues
        2. 7.3.1.2 Using PCB Trace as a Sense Resistor
      2. 7.3.2 Sense Line Inputs
      3. 7.3.3 Effects of Series Resistance on Sense Lines
    4. 7.4 Device Functional Modes
      1. 7.4.1 Bias Current at Low Common Mode Voltage
      2. 7.4.2 Applying Input Voltage With No Supply Voltage
      3. 7.4.3 Driving an ADC
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Design Procedure
        1. 8.2.2.1 First Step – LMP8640 or LMP8640HV Selection
        2. 8.2.2.2 Second Step – Gain Option Selection
        3. 8.2.2.3 Third Step – Shunt Resistor Selection
      3. 8.2.3 Application Curve
    3. 8.3 What to Do and What Not to Do
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics 2.7V

Unless otherwise specified, all limits verified at TA = 25°C, VS= V+ – V-, VSENSE= +IN-(-IN), V+ = 2.7V, V− = 0 V, −2V < VCM < 76V, RL = 10MΩ.(1)
PARAMETER TEST CONDITIONS MIN(3) TYP(2) MAX(3) UNIT
VOS Input Offset Voltage VCM = 2.1V -900 900 µV
VCM = 2.1V, Over Temperature -1160 1160
TCVOS Input Offset Voltage Drift(4) (6) VCM = 2.1V 2.6 µV/°C
IB Input Bias Current (7) VCM = 2.1V, VSENSE = 0V 12 20 µA
VCM = 2.1V, Over Temperature, VSENSE = 0V 27
eni Input Voltage Noise (6) f > 10kHz 117 nV/√ Hz
Gain AV Gain LMP8640-T LMP8640HV-T 20 V/V
Gain LMP8640-F LMP8640HV-F 50
Gain LMP8640-H LMP8640HV-H 100
Gain error VCM = 2.1V -0.25% 0.25%
VCM = 2.1V, Over Temperature -0.51% 0.51%
Accuracy over temperature(6) VCM = 2.1V, Over Temperature 26.2 ppm/°C
PSRR Power Supply Rejection Ratio VCM = 2.1V, 2.7V < V+ < 12V, 85 dB
CMRR Common Mode Rejection Ratio LMP8640HV 2.1V < VCM < 42V
LMP8640 2.1V < VCM< 42V		 103 dB
LMP8640HV 2.1V < VCM < 76V 95
-2V <VCM < 2V, 60
BW Fixed Gain LMP8640-T LMP8640HV-T
(6)		 DC VSENSE = 67.5mV,
CL = 30pF,RL= 1MΩ		 950 kHz
Fixed Gain LMP8640-F LMP8640HV-F
(6)		 DC VSENSE =27mV,
CL = 30pF, RL= 1MΩ		 450
Fixed Gain LMP8640-H LMP8640HV-H
(6)		 DC VSENSE = 13.5mV,
CL = 30pF, RL= 1MΩ		 230
SR Slew Rate (5)(6) VCM =5V, CL = 30pF, RL = 1MΩ,
LMP8640-T LMP8640HV-T
VSENSE =100mVpp,
LMP8640-F LMP8640HV-F
VSENSE =40mVpp,
LMP8640-H LMP8640HV-H
VSENSE =20mVpp,		 1.4 V/µs
RIN Differential Mode Input Impedance(6) 4 kΩ
IS Supply Current VCM = 2.1V 420 600 µA
VCM = 2.1V, Over Temperature 800
VCM = −2V 2000 2500
VCM = −2V, Over Temperature 2750
VOUT Maximum Output Voltage VCM = 2.1V 2.65 V
Minimum Output Voltage LMP8640-T LMP8640HV-T
VCM = 2.1V		 18.2 mV
LMP8640-F LMP8640HV-F
VCM = 2.1V		 40
LMP8640-H LMP8640HV-H
VCM = 2.1V		 80
CLOAD Max Output Capacitance Load(6) 30 pF
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the device can be permanently degraded, either mechanically or electrically.
(2) Typical values represent the most likely parametric norm at the time of characterization. Actual typical values can vary over time and also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(3) Limits are 100% production tested at 25°C. Limits over the operating temperature range are verified through correlations using statistical quality control (SQC) method.
(4) Offset voltage temperature drift is determined by dividing the change in VOS at the temperature extremes by the total temperature change.
(5) The number specified is the average of rising and falling slew rates and measured at 90% to 10%.
(6) This parameter is verified by design and/or characterization and is not tested in production.
(7) Positive Bias Current corresponds to current flowing into the device. Specification does not include input signal dependent currents on the positive input of approximately Vsense / 4KΩ due to topology feedback action.