SNWS020C November   2007  – October 2015 LMH2100

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Ratings
    4. 6.4 Thermal Information
    5. 6.5 2.7-V DC and AC Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Characteristics of the LMH2100
      2. 7.3.2 Accurate Power Measurement
        1. 7.3.2.1 LOG-Conformance Error
        2. 7.3.2.2 Temperature Drift Error
          1. 7.3.2.2.1 Temperature Compensation
          2. 7.3.2.2.2 Differential Power Errors
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown
        1. 7.4.1.1 Output Behavior in Shutdown
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Functionality and Application of RF Power Detectors
        1. 8.1.1.1 Functionality of RF Power Detectors
          1. 8.1.1.1.1 Key Characteristics of RF Power Detectors
          2. 8.1.1.1.2 Types of RF Power Detectors
            1. 8.1.1.1.2.1 Diode Detector
            2. 8.1.1.1.2.2 (Root) Mean Square Detector
            3. 8.1.1.1.2.3 Logarithmic Detectors
    2. 8.2 Typical Applications
      1. 8.2.1 Application With Transmit Power Control Loop
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Detector Interfacing
            1. 8.2.1.2.1.1 Concept of Power Measurements
            2. 8.2.1.2.1.2 RF Input
            3. 8.2.1.2.1.3 Output and Reference
              1. 8.2.1.2.1.3.1 Filtering
            4. 8.2.1.2.1.4 Interface to the ADC
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Application With Voltage Standing Wave Ratio Measurement
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Supply Lines
        1. 10.1.1.1 Positive Supply (VDD)
        2. 10.1.1.2 Ground (GND)
      2. 10.1.2 RF Input Interface
      3. 10.1.3 Microstrip Configuration
      4. 10.1.4 GCPW Configuration
      5. 10.1.5 Reference (REF)
      6. 10.1.6 Output (OUT)
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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11 Device and Documentation Support

11.1 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.2 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.3 Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

11.4 Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.