ZHCSNE5D
October 2020 – February 2024
LMG3522R030-Q1
PRODUCTION DATA
1
1
特性
2
应用
3
说明
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Thermal Information
5.5
Electrical Characteristics
5.6
Switching Characteristics
5.7
Typical Characteristics
6
Parameter Measurement Information
6.1
Switching Parameters
6.1.1
Turn-On Times
6.1.2
Turn-Off Times
6.1.3
Drain-Source Turn-On Slew Rate
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
GaN FET Operation Definitions
7.3.2
Direct-Drive GaN Architecture
7.3.3
Drain-Source Voltage Capability
7.3.4
Internal Buck-Boost DC-DC Converter
7.3.5
VDD Bias Supply
7.3.6
Auxiliary LDO
7.3.7
Fault Detection
7.3.7.1
Overcurrent Protection and Short-Circuit Protection
7.3.7.2
Overtemperature Shutdown
7.3.7.3
UVLO Protection
7.3.7.4
Fault Reporting
7.3.8
Drive-Strength Adjustment
7.3.9
Temperature-Sensing Output
7.3.10
Ideal-Diode Mode Operation
7.3.10.1
Overtemperature-Shutdown Ideal-Diode Mode
7.4
Start-Up Sequence
7.5
Safe Operation Area (SOA)
7.5.1
Repetitive SOA
7.6
Device Functional Modes
8
Application and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.2.1
Slew Rate Selection
8.2.2.1.1
Start-Up and Slew Rate With Bootstrap High-Side Supply
8.2.2.2
Signal Level-Shifting
8.2.2.3
Buck-Boost Converter Design
8.2.3
Application Curves
8.3
Do's and Don'ts
8.4
Power Supply Recommendations
8.4.1
Using an Isolated Power Supply
8.4.2
Using a Bootstrap Diode
8.4.2.1
Diode Selection
8.4.2.2
Managing the Bootstrap Voltage
8.5
Layout
8.5.1
Layout Guidelines
8.5.1.1
Solder-Joint Reliability
8.5.1.2
Power-Loop Inductance
8.5.1.3
Signal-Ground Connection
8.5.1.4
Bypass Capacitors
8.5.1.5
Switch-Node Capacitance
8.5.1.6
Signal Integrity
8.5.1.7
High-Voltage Spacing
8.5.1.8
Thermal Recommendations
8.5.2
Layout Examples
9
Device and Documentation Support
9.1
Documentation Support
9.1.1
Related Documentation
9.2
接收文档更新通知
9.3
支持资源
9.4
Trademarks
9.5
静电放电警告
9.6
Export Control Notice
9.7
术语表
10
Revision History
11
Mechanical, Packaging, and Orderable Information
封装选项
请参考 PDF 数据表获取器件具体的封装图。
机械数据 (封装 | 引脚)
RQS|52
散热焊盘机械数据 (封装 | 引脚)
RQS|52
QFND671A
订购信息
zhcsne5d_oa
5.7
Typical Characteristics
Figure 5-1
Drain-Current Turn-On Delay Time vs Drive-Strength Resistance
Figure 5-3
Turn-On Rise Time vs Drive-Strength Resistance
Figure 5-5
Drain Current vs Drain-Source Voltage
Figure 5-7
Normalized On-Resistance vs Junction Temperature
VDD = 12 V
T
J
= 25°C
Figure 5-9
VDD Supply Current vs IN Switching Frequency
Figure 5-11
Repetitive Safe Operation Area
Figure 5-2
Turn-On Delay Time vs Drive-Strength Resistance
Figure 5-4
Turn-On Slew Rate vs Drive-Strength Resistance
IN = 0 V
Figure 5-6
Off-State Source-Drain Voltage vs Source Current
Figure 5-8
Output Capacitance vs Drain-Source Voltage
VDD = 12 V
T
J
= 125°C
Figure 5-10
VDD Supply Current vs IN Switching Frequency