SNVS300H July   2004  – September 2016 LM5111

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Options
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout
      2. 8.3.2 Output Stage
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 VCC
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Bias Supply Voltage
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
      1. 11.3.1 Drive Power Requirement Calculations in LM5111
      2. 11.3.2 Continuous Current Rating of LM5111
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

1 Features

  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5-A Sink and 3-A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns and 12 ns Rise and Fall, Respectively, With 2-nF Load)
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Supply Rail Undervoltage Lockout Protection (UVLO)ƒ
  • LM5111-4 UVLO Configured to Drive PFET through OUT_A and NFET through OUT_B
  • Pin Compatible With Industry Standard Gate Drivers

2 Applications

  • Synchronous Rectifier Gate Drivers
  • Switch-mode Power Supply Gate Driver
  • Solenoid and Motor Drivers

3 Description

The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package or the thermally enhanced
MSOP-PowerPAD package.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
LM5111 SOIC (8) 5.00 mm x 6.00 mm
MSOP-PowerPAD (8) 3.00 mm x 4.90 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Application Diagram

LM5111 simplified_app_diagram.gif