SNAS470E October   2008  – November 2015 LM48100Q-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics for VDD = 5 V
    6. 6.6  Electrical Characteristics for VDD = 5 V at Extended Temperature Limits
    7. 6.7  Electrical Characteristics for VDD = 3.6 V
    8. 6.8  Electrical Characteristics for VDD = 3.6 V at Extended Temperature Limits
    9. 6.9  I2C Interface Characteristics for VDD = 5 V, 2.2 V ≤ I2C VDD ≤ 5.5 V
    10. 6.10 I2C Interface Characteristics for VDD = 5 V, 1.8 V ≤ I2C VDD ≤ 2.2 V
    11. 6.11 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Diagnostic Control
      2. 7.3.2 Fault Detection Control Register
      3. 7.3.3 General Amplifier Function
        1. 7.3.3.1 Bridge Configuration Explained
        2. 7.3.3.2 Input Mixer/Multiplexer
      4. 7.3.4 Output Fault Detection
        1. 7.3.4.1 Output Short to Supplies (VDD or GND)
        2. 7.3.4.2 Output Short Circuit and Open Circuit Detection
        3. 7.3.4.3 Output Over-Current Detection
        4. 7.3.4.4 Thermal Overload Detection
      5. 7.3.5 Open FAULT Output
      6. 7.3.6 Volume Control
      7. 7.3.7 Shutdown Function
      8. 7.3.8 Power Dissipation
    4. 7.4 Device Functional Modes
      1. 7.4.1 One-Shot Mode
      2. 7.4.2 Continuous Diagnostic Mode
    5. 7.5 Programming
      1. 7.5.1 Write-Only I2C Compatible Interface
      2. 7.5.2 I2C Bus Format
    6. 7.6 Register Maps
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Power Supply Bypassing/Filtering
        2. 8.2.2.2 Input Capacitor Selection
        3. 8.2.2.3 Bias Capacitor Selection
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Exposed DAP Mounting Considerations
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

See (1)(2)(3)
MIN MAX UNIT
Supply voltage, continuous 6 V
Input voltage −0.3 VDD + 0.3 °C
Power dissipation(4) Internally Limited
Junction temperature 150 °C
Lead temperature (soldering 4 sec)(5) 260 °C
Storage temperature −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The Electrical Characteristics tables found in Specifications list ensured specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Test Conditions, Notes, or both. Typical specifications are estimations only and are not ensured.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.
(4) θJA measured with a 4 layer JEDEC board.
(5) For detailed information on soldering plastic HTSSOP and LLP packages go to the TI Packaging site, ti.com/packaging.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) 2500 V
Charged-device model (CDM), per AEC Q100-011 300
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

MIN MAX UNIT
Temperature TMIN ≤ TA ≤ TMAX −40 105 °C
Supply voltage VDDand PVDD 3 5.5 V
I2C Supply voltage I2CVDD 1.8 5.5 V
I2CVDD VDD V

6.4 Thermal Information

THERMAL METRIC(1) LM48100Q-Q1 UNIT
PWP (HTSSOP)
14 PINS
RθJA Junction-to-ambient thermal resistance 37.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 5.2 °C/W
RθJB Junction-to-board thermal resistance — °C/W
ψJT Junction-to-top characterization parameter — °C/W
ψJB Junction-to-board characterization parameter — °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics for VDD = 5 V

Programmable Gain = 0 dB, RL = 8 Ω, f = 1 kHz, unless otherwise specified. Limits apply for TA = 25°C, unless otherwise specified.
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX UNIT
IDD Quiescent Power Supply Current VIN = 0 V, Both channels active RL = 8 Ω 4.4 9 mA
RL = ∞ 4.2 6
IDD Diagnostic Mode Quiescent Power Supply Current Diagnostic Mode Enabled, RL = ∞ 12.5 14.5 mA
ISD Shutdown Current Shutdown Enabled 0.01 1 µA
VOS Differential Output Offset Voltage VIN = 0 V, RL = 8 Ω 8.8 50 mV
TWU Wake-Up Time Time from shutdown to audio available 11.6 50 ms
AV Gain Minimum Gain Setting –55 –54 –53 dB
Maximum Gain Setting 17 18 19
Mute Mute Attenuation –80 –77 dB
RIN Input Resistance AV = 18 dB 11.5 12.5 13.5 kΩ
AV = –54 dB 98 110 120
PO Output Power RL = 8 Ω, f = 1 kHz THD+N = 10% 1.6 W
THD+N = 1% 1.05 1.3
THD+N Total Harmonic Distortion + Noise PO = 850 mW, f = 1 kHz, RL = 8 Ω 0.04%
PSRR Power Supply Rejection Ratio VRIPPLE = 200 mVP-P Sine, Inputs AC GND, CIN_= 1 μF, Input Referred, CBIAS = 2.2 μF f = 217 Hz 66 79 dB
f = 1 kHz 74
SNR Signal-to-Noise-Ratio POUT = 450 mW, f = 1 kHz 104 dB
∈OS Output Noise AV = 0 dB, A-weighted Filter 12 μV
IOUT(FAULT) FAULT Output Current FAULT = 0, VOUT(FAULT)= 0.4 V 3 mA
RFAULT Output to Supply Short Circuit Detection Threshold Short between either OUTA to VDD or GND, or OUTB to VDD or GND Short Circuit 3 kΩ
Open Circuit 7.5
RFAULT Output to Supply Short Circuit Detection Threshold Short between both OUTA and
OUTB to VDD or GND 		Short Circuit 6 kΩ
Open Circuit 15
ROPEN Open Circuit Detection Threshold Open circuit between OUTA and OUTB 100 200 Ω
RSHT Output to Output Short Circuit Detection Threshold Short circuit between OUTA and OUTB 2 6 Ω
ISHTCKT Short Circuit Current Limit 1.47 1.67 A
TSD Thermal Shutdown Threshold 170 °C
tDIAG Diagnostic Time 58 ms
(1) Datasheet min/max specification limits are specified by test or statistical analysis.
(2) Typical Values are given for TA = 25°C.

6.6 Electrical Characteristics for VDD = 5 V at Extended Temperature Limits

Programmable Gain = 0 dB, RL = 8 Ω, f = 1 kHz, unless otherwise specified. Limits apply for TA = –40°C to 105°C, unless otherwise specified.
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX UNIT
IDD Quiescent Power Supply Current VIN = 0 V, Both channels active RL = 8 Ω 4.4 10.8 mA
RL = ∞ 4.2 7.9
IDD Diagnostic Mode Quiescent Power Supply Current Diagnostic Mode Enabled, RL = ∞ 12.5 mA
ISD Shutdown Current Shutdown Enabled 0.01 µA
VOS Differential Output Offset Voltage VIN = 0 V, RL = 8 Ω 8.8 75 mV
TWU Wake-Up Time Time from shutdown to audio available 11.6 ms
AV Gain Minimum Gain Setting –56 –54 –52 dB
Maximum Gain Setting 17 18 19
Mute Mute Attenuation –80 –74 dB
RIN Input Resistance AV = 18 dB 12.5 kΩ
AV = –54 dB 89 110 130
PO Output Power RL = 8 Ω, f = 1 kHz THD+N = 10% 1.6 W
THD+N = 1% 0.96 1.3
THD+N Total Harmonic Distortion + Noise PO = 850 mW, f = 1 kHz, RL = 8 Ω 0.04%
PSRR Power Supply Rejection Ratio VRIPPLE = 200 mVP-P Sine, Inputs AC GND, CIN_= 1 μF, Input Referred, CBIAS = 2.2 μF f = 217 Hz 63 79 dB
f = 1 kHz 74
SNR Signal-to-Noise-Ratio POUT = 450 mW, f = 1 kHz 104 dB
∈OS Output Noise AV = 0 dB, A-weighted Filter 12 μV
IOUT(FAULT) FAULT Output Current FAULT = 0, VOUT(FAULT)= 0.4 V 3 mA
RFAULT Output to Supply Short Circuit Detection Threshold Short between either OUTA to VDD or GND, or OUTB to VDD or GND Short Circuit 3 kΩ
Open Circuit 7.5
ISHTCKT Short Circuit Current Limit 1.47 2 A
TSD Thermal Shutdown Threshold 170 °C
tDIAG Diagnostic Time 58 ms
(1) Datasheet min/max specification limits are specified by test or statistical analysis.
(2) Typical Values are given for TA = 25°C.

6.7 Electrical Characteristics for VDD = 3.6 V

Programmable Gain = 0 dB, RL = 8 Ω, f = 1 kHz, unless otherwise specified. Limits apply for TA = 25°C, unless otherwise specified.
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX UNIT
IDD Quiescent Power Supply Current VIN = 0 V, Both channels active RL = 8 Ω 3.8 8.5 mA
RL = ∞ 3.6 5
IDD Diagnostic Mode Quiescent Power Supply Current Diagnostic Mode Enabled, RL = ∞ 11.7 14.5 mA
ISD Shutdown Current Shutdown Enabled 0.01 1 µA
VOS Differential Output Offset Voltage VIN = 0 V, RL = 8 Ω 8.8 50 mV
TWU Wake-Up Time Time from shutdown to audio available 11.5 50 ms
AV Gain Minimum Gain Setting –55 –54 –53 dB
Maximum Gain Setting 17 18 19
Mute Mute Attenuation –79 –77 dB
RIN Input Resistance AV = 18 dB 11.5 12.5 13.5 kΩ
AV = –54 dB 98 110 120
PO Output Power RL = 8 Ω, f = 1 kHz THD+N = 10% 820 mW
THD+N = 1% 480 660
THD+N Total Harmonic Distortion + Noise PO = 400 mW, f = 1 kHz, RL = 8 Ω 0.04%
PSRR Power Supply Rejection Ratio VRIPPLE = 200 mVP-P Sine, Inputs AC GND, CIN_= 1 μF, Input Referred, CBIAS = 2.2 μF f = 217 Hz 66 78 dB
f = 1 kHz 75
SNR Signal-to-Noise-Ratio POUT = 780 mW, f = 1 kHz 106 dB
∈OS Output Noise AV = 0 dB, A-weighted Filter 12.5 μV
IOUT(FAULT) FAULT Output Current FAULT = 0, VOUT(FAULT)= 0.4 V 3 mA
RFAULT Output to Supply Short Circuit Detection Threshold Short between either OUTA to VDD or GND, or OUTB to VDD or GND Short Circuit 3 kΩ
Open Circuit 7.5
RFAULT Output to Supply Short Circuit Detection Threshold Short between both OUTA and
OUTB to VDD or GND 		Short Circuit 6 kΩ
Open Circuit 15
ROPEN Open Circuit Detection Threshold Open circuit between OUTA and OUTB 100 200 Ω
RSHT Output to Output Short Circuit Detection Threshold Short circuit between OUTA and OUTB 2 6 Ω
ISHTCKT Short Circuit Current Limit 1.43 A
TSD Thermal Shutdown Threshold 170 °C
tDIAG Diagnostic Time 63 ms
(1) Datasheet min/max specification limits are specified by test or statistical analysis.
(2) Typical Values are given for TA = 25°C.

6.8 Electrical Characteristics for VDD = 3.6 V at Extended Temperature Limits

Programmable Gain = 0 dB, RL = 8 Ω, f = 1 kHz, unless otherwise specified. Limits apply for TA = –40°C to 105°C, unless otherwise specified.
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX UNIT
IDD Quiescent Power Supply Current VIN = 0 V, Both channels active RL = 8 Ω 3.8 10.8 mA
RL = ∞ 3.6 7
IDD Diagnostic Mode Quiescent Power Supply Current Diagnostic Mode Enabled, RL = ∞ 11.7 mA
ISD Shutdown Current Shutdown Enabled 0.01 µA
VOS Differential Output Offset Voltage VIN = 0 V, RL = 8 Ω 8.8 76 mV
TWU Wake-Up Time Time from shutdown to audio available 11.5 ms
AV Gain Minimum Gain Setting –54 dB
Maximum Gain Setting 18
Mute Mute Attenuation –79 dB
RIN Input Resistance AV = 18 dB 12.5 kΩ
AV = –54 dB 89 110 135
PO Output Power RL = 8 Ω, f = 1 kHz THD+N = 10% 820 mW
THD+N = 1% 660
THD+N Total Harmonic Distortion + Noise PO = 400 mW, f = 1 kHz, RL = 8 Ω 0.04%
PSRR Power Supply Rejection Ratio VRIPPLE = 200 mVP-P Sine, Inputs AC GND, CIN_= 1 μF, Input Referred, CBIAS = 2.2 μF f = 217 Hz 60 78 dB
f = 1 kHz 75
SNR Signal-to-Noise-Ratio POUT = 780 mW, f = 1 kHz 106 dB
∈OS Output Noise AV = 0 dB, A-weighted Filter 12.5 μV
IOUT(FAULT) FAULT Output Current FAULT = 0, VOUT(FAULT)= 0.4 V 3 mA
ISHTCKT Short Circuit Current Limit 1.43 A
TSD Thermal Shutdown Threshold 170 °C
tDIAG Diagnostic Time 63 ms
(1) Datasheet min/max specification limits are specified by test or statistical analysis.
(2) Typical Values are given for TA = 25°C.

6.9 I2C Interface Characteristics for VDD = 5 V, 2.2 V ≤ I2C VDD ≤ 5.5 V

AV = 0 dB, RL = 8 Ω, f = 1 kHz, unless otherwise specified. Limits apply for TA = 25 °C, unless otherwise specified.
PARAMETER TEST CONDITIONS MIN(1) MAX UNIT
t1 SCL Period 2.5 µs
t2 SDA Setup Time 100 ns
t3 SDA Stable Time 0 ns
t4 Start Condition Time 100 ns
t5 Stop Condition Time 100 ns
t6 SDA Data Hold Time 100 ns
VIH Logic High Input Threshold 0.7 x I2CVDD V
VIL Logic Low Input Threshold 0.3 x I2CVDD V
(1) Datasheet min/max specification limits are specified by test or statistical analysis.

6.10 I2C Interface Characteristics for VDD = 5 V, 1.8 V ≤ I2C VDD ≤ 2.2 V

AV = 0 dB, RL = 8 Ω, f = 1 kHz, unless otherwise specified. Limits apply for TA = 25 °C, unless otherwise specified.
PARAMETER TEST CONDITIONS MIN(1) MAX UNIT
t1 SCL Period 2.5 µs
t2 SDA Setup Time 250 ns
t3 SDA Stable Time 0 ns
t4 Start Condition Time 250 ns
t5 Stop Condition Time 250 ns
t6 SDA Data Hold Time 250 ns
VIH Logic High Input Threshold 0.7 x I2CVDD V
VIL Logic Low Input Threshold 0.3 x I2CVDD V
(1) Datasheet min/max specification limits are specified by test or statistical analysis.

6.11 Typical Characteristics

LM48100Q-Q1 30075804.gif
VDD = 3.6 V POUT = 600 mW RL = 4 Ω
Figure 1. THD+N vs Frequency
LM48100Q-Q1 30075805.gif
VDD = 5 V POUT = 1.2 W RL = 4 Ω
Figure 3. THD+N vs Frequency
LM48100Q-Q1 30075802.gif
f = 1 kHz RL = 4 Ω
Figure 5. THD+N vs Output Power
LM48100Q-Q1 30075808.gif
f = 1 kHz RL = 4 Ω
Figure 7. Power Dissipation vs Output Power
LM48100Q-Q1 30075810.gif
f = 1 kHz RL = 4 Ω
Figure 9. Output Power vs Supply Voltage
LM48100Q-Q1 30075812.gif
VDD = 3.6 V VRIPPLE = 200 mVP-P RL = 8 Ω
Figure 11. PSRR vs Frequency
LM48100Q-Q1 30075806.gif
VDD = 3.6 V POUT = 400 mW RL = 8 Ω
Figure 2. THD+N vs Frequency
LM48100Q-Q1 30075807.gif
VDD = 5 V POUT = 850 mW RL = 8 Ω
Figure 4. THD+N vs Frequency
LM48100Q-Q1 30075803.gif
f = 1 kHz RL = 8 Ω
Figure 6. THD+N vs Output Power
LM48100Q-Q1 30075809.gif
f = 1 kHz RL = 8 Ω
Figure 8. Power Dissipation vs Output Power
LM48100Q-Q1 30075811.gif
f = 1 kHz RL = 8 Ω
Figure 10. Output Power vs Supply Voltage