SNVS405G Data sheet | 德州仪器 TI.com.cn

SNVS405G December 2005 – April 2015 LM3674

PRODUCTION DATA.

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DBV|5
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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽²⁾

	MIN	MAX	UNIT
V_IN pin: voltage to GND	−0.2	6	V
EN, FB, and SW pins	GND − 0.2	V_IN + 0.2	V
Continuous power dissipation⁽³⁾	Internally Limited
Junction temperature (T_J-MAX)		125	°C
Maximum lead temperature (soldering, 10 seconds)		260	°C
Storage temperature, T_stg	–65		°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military- or Aerospace-specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.

(3) In applications where high power dissipation and/or poor package resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (T_A-MAX) is dependent on the maximum operating junction temperature (T_J-MAX), the maximum power dissipation of the device in the application (P_D-MAX) and the junction-to-ambient thermal resistance of the package (R_θJA) in the application, as given by the following equation: T_A-MAX = T_J-MAX – (R_θJA× P_D-MAX). See Dissipation Ratings for P_D-MAX values at different ambient temperatures.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	±200	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
Input voltage⁽²⁾	2.7	5.5	V
Recommended load current	0	600	mA
Junction temperature, T_J	–30	125	°C
Ambient temperature,T_A	–30	85	°C

(1) All voltages are with respect to the potential at the GND pin.

(2) Input voltage range recommended for ideal applications performance for the specified output voltages are given below:
V_IN = 2.7 V to 5.5 V for 1 V ≤ V_OUT< 1.8 V
V_IN = (V_OUT + V_{DROP OUT}) to 5.5 V for 1.8 ≤ V_OUT ≤ 3.3 V, where V_{DROP OUT} = I_LOAD × (R_{DSON (P)} + R_INDUCTOR)

6.4 Thermal Information

THERMAL METRIC⁽¹⁾			LM3674	UNIT
			DBV (SOT-23)
			5 PINS
R_θJA	Junction-to-ambient thermal resistance	4-layer board	130	°C/W
R_θJA	Junction-to-ambient thermal resistance	2-layer board	250	°C/W

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Dissipation Ratings

over operating free-air temperature range (unless otherwise noted)

R_θJA	T_A ≤ 25°C (POWER RATING)	T_A = 60°C (POWER RATING)	T_A = 85°C (POWER RATING)
250°C/W (2-layer board)	400 mW	260 mW	160 mW
130°C/W (4-layer board)	770 mW	500 mW	310 mW

6.6 Electrical Characteristics

Typical limits are T_A = 25°C; unless otherwise noted, specifications apply to the LM3674 with V_IN = EN = 3.6 V⁽¹⁾⁽²⁾⁽³⁾

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_FB	Feedback voltage⁽⁴⁾⁽⁵⁾	I_O = 10 mA, −30°C ≤ T_J ≤ 125°C	–4%		4%
	Line regulation	2.7 V ≤ V_IN ≤ 5.5 V, I_O = 100 mA		0.083		%/V
	Load regulation	100 mA ≤ I_O ≤ 600 mA, V_IN = 3.6 V		0.0010		%/mA
V_REF	Internal reference voltage	See⁽⁶⁾		0.5		V
I_SHDN	Shutdown supply current	EN = 0 V		0.01		µA
I_SHDN	Shutdown supply current	EN = 0 V, –30°C ≤ T_J ≤ 125°C			1	µA
I_Q	DC bias current into V_IN	No load, device is not switching (FB = 0 V)		300		µA
I_Q	DC bias current into V_IN	No load, device is not switching (FB = 0 V) –30°C ≤ T_J ≤ 125°C			600	µA
R_{DSON (P)}	Pin-to-pin resistance for PFET	I_SW= 200 mA		380	500	mΩ
R_{DSON (N)}	Pin-to-pin resistance for NFET	I_SW= 200 mA		250	400	mΩ
I_LIM	Switch peak current limit	Open loop⁽⁷⁾		1020		mA
I_LIM	Switch peak current limit	Open loop⁽⁷⁾, –30°C ≤ T_J ≤ 125°C	830		1200	mA
V_IH	Logic high input	–30°C ≤ T_J ≤ 125°C	1			V
V_IL	Logic low input	–30°C ≤ T_J ≤ 125°C			0.4	V
I_EN	Enable (EN) input current			0.01		µA
I_EN	Enable (EN) input current	–30°C ≤ T_J ≤ 125°C			1	µA
F_OSC	Internal oscillator frequency	PWM mode		2		MHz
F_OSC	Internal oscillator frequency	PWM mode, −30°C ≤ T_J ≤ 125°C	1.6		2.6	MHz

(1) All voltages are with respect to the potential at the GND pin.

(2) Minimum and maximum limits are specified by design, test, or statistical analysis. Typical numbers represent the most likely values.

(3) The parameters in the Electrical Characteristics are tested at V_IN = 3.6 V unless otherwise specified. For performance curves over the input voltage range, see Typical Characteristics.

(4) ADJ configured to 1.5-V output.

(5) For V_OUT < 2.5 V, V_IN = 3.6 V; for V_OUT ≥ 2.5 V, V_IN = V_OUT + 1.

(6) For the ADJ version the resistor dividers should be selected such that at the desired output voltage, the voltage at the FB pin is 0.5 V.

(7) See Typical Characteristics for closed loop data and its variation with regards to supply voltage and temperature. Electrical Characteristics reflect open loop data (FB = 0 V and current drawn from the SW pin ramped up until cycle-by-cycle current limit is activated). Closed-loop current limit is the peak inductor current measured in the application circuit by increasing output current until output voltage drops by 10%.