ZHCSQ40C
January 2023 – September 2023
LM2105
PRODUCTION DATA
1
1
特性
2
应用
3
说明
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Timing Diagrams
6.8
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
功能方框图
7.3
Feature Description
7.3.1
Start-Up and UVLO
7.3.2
Input Stages
7.3.3
Level Shift
7.3.4
Output Stages
7.3.5
SH Transient Voltages Below Ground
7.4
Device Functional Modes
8
Application and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.2.1
Select Bootstrap and GVDD Capacitor
8.2.2.2
Select External Gate Driver Resistor
8.2.2.3
Estimate the Driver Power Loss
8.2.3
Application Curves
9
Power Supply Recommendations
10
Layout
10.1
Layout Guidelines
10.2
Layout Example
11
Device and Documentation Support
11.1
Device Support
11.1.1
第三方产品免责声明
11.2
Documentation Support
11.2.1
Related Documentation
11.3
接收文档更新通知
11.4
支持资源
11.5
Trademarks
11.6
静电放电警告
11.7
术语表
12
Mechanical, Packaging, and Orderable Information
封装选项
机械数据 (封装 | 引脚)
D|8
MSOI002K
DSG|8
MPDS308C
散热焊盘机械数据 (封装 | 引脚)
DSG|8
QFND141I
订购信息
zhcsq40c_oa
zhcsq40c_pm
1
特性
可驱动两个采用半桥配置的 N 沟道 MOSFET
集成式自举二极管
5-V
GVDD 上的典型欠压锁定
BST 上的最大绝对电压为 107V
SH 上的 –19.5V 绝对最大负瞬态电压处理
0.5A/0.8A 峰值拉电流/灌电流
115ns 典型传播延迟