ZHCSSZ3H May   2008  – August 2023 ISO15 , ISO35

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics: Driver
    10. 6.10 Electrical Characteristics: Receiver
    11. 6.11 Supply Current
    12. 6.12 Switching Characteristics: Driver
    13. 6.13 Switching Characteristics: Receiver
    14. 6.14 Insulation Characteristics Curves
    15. 6.15 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Device Functional Modes
      1. 8.3.1 Device I/O Schematics
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  11.   Power Supply Recommendations
  12. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  13. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  14. 13Mechanical, Packaging, and Orderable Information

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6.10 Electrical Characteristics: Receiver

All typical specs are at VCC1=3.3V, VCC2=5V, TA=27°C, (Min/Max specs are over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIT+ Positive-going input threshold voltage
IO = –8 mA
 		 –20 mV
VIT– Negative-going input threshold voltage
IO = 8 mA
 		 –200 mV
Vhys Input hysteresis (VIT+ – VIT–) 50 mV
VO Output Voltage VID = 200mV, IO = -8mA 2.4 V
VID = –200mV, IO = 8mA 0.4 V
IOZ Output high-impedance current on the R pin
VI = –7 to 12 V, Other input = 0 V
 		 –1 1 µA

IA or IB
 
Bus input current

-55℃ ≤ TA ≤ 85℃ VA or VB = 12 V 50 100 µA
-55℃ ≤ TA ≤ 85℃ VA or VB = 12 V, VCC = 0 50 100 µA
85℃ ≤ TA ≤ 125℃ VA or VB = 12 V 200 µA
85℃ ≤ TA ≤ 125℃ VA or VB = 12 V, VCC = 0 200 µA
-55℃ ≤ TA ≤ 125℃ VA or VB = –7 V -100 -40 µA
-55℃ ≤ TA ≤ 125℃ VA or VB = –7 V, VCC = 0 -100 -30 µA

IIH
 
High-level input current, RE
VIH = 2 V
 		 -10 µA

IIL
 
Low-level input current, RE
VIL = 0.8 V
 		 -10 µA
RID
Differential input resistance


A, B

48 kohm
CID
Differential input capacitance


VI = 0.4 sin (4E6πt) + 0.5V, DE at 0 V
 		 16 pF