ZHCSCX8D April   2012  – October 2014 DS90UB925Q-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 DC Electrical Characteristics
    6. 6.6 AC Electrical Characteristics
    7. 6.7 Recommended Timing for the Serial Control Bus
    8. 6.8 Switching Characteristics
    9. 6.9 Typical Charateristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  High Speed Forward Channel Data Transfer
      2. 7.3.2  Low Speed Back Channel Data Transfer
      3. 7.3.3  Backward Compatible Mode
      4. 7.3.4  Common Mode Filter Pin (CMF)
      5. 7.3.5  Video Control Signal Filter
      6. 7.3.6  EMI Reduction Features
        1. 7.3.6.1 Input SSC Tolerance (SSCT)
      7. 7.3.7  LVCMOS VDDIO Option
      8. 7.3.8  Power Down (PDB)
      9. 7.3.9  Remote Auto Power Down Mode
      10. 7.3.10 Input PCLK Loss Detect
      11. 7.3.11 Serial Link Fault Detect
      12. 7.3.12 Pixel Clock Edge Select (RFB)
      13. 7.3.13 Low Frequency Optimization (LFMODE)
      14. 7.3.14 Interrupt Pin — Functional Description And Usage (INTB)
      15. 7.3.15 Internal Pattern Generation
      16. 7.3.16 GPIO[3:0] and GPO_REG[8:4]
        1. 7.3.16.1 GPIO[3:0] Enable Sequence
        2. 7.3.16.2 GPO_REG[8:4] Enable Sequence
      17. 7.3.17 I2S Transmitting
        1. 7.3.17.1 Secondary I2S Channel
      18. 7.3.18 Built In Self Test (BIST)
        1. 7.3.18.1 BIST Configuration and Status
          1. 7.3.18.1.1 Sample BIST Sequence
        2. 7.3.18.2 Forward Channel And Back Channel Error Checking
    4. 7.4 Device Functional Modes
      1. 7.4.1 Configuration Select (MODE_SEL)
      2. 7.4.2 Repeater Application
        1. 7.4.2.1 Repeater Configuration
        2. 7.4.2.2 Repeater Connections
    5. 7.5 Programming
    6. 7.6 Register Maps
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Power Up Requirements and PDB Pin
    2. 9.2 CML Interconnect Guidelines
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档　
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 术语表
  12. 12机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings (1)(2)

MIN MAX UNIT
Supply Voltage – VDD33 -0.3 +4.0 V
Supply Voltage – VDDIO -0.3 +4.0 V
LVCMOS I/O Voltage(3) -0.3 VDDIO + 0.3 V
Serializer Output Voltage -0.3 +2.75 V
Junction Temperature +150 °C
(1) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
(2) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions.
(3) The maximum limit (VDDIO +0.3V) does not apply to the PDB pin during the transition to the power down state (PDB transitioning from HIGH to LOW).

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range -65 +150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) ±8 ±8 kV
Charged device model (CDM), per AEC Q100-011 ±1.25 ±1.25
Machine Model (MM) ±250 ±250 V
ESD Rating (IEC 61000-4-2, powered-up only)
RD= 330Ω, CS = 150pF		 Air Discharge
(DOUT+, DOUT-)		 ±15 ±15 kV
Contact Discharge
(DOUT+, DOUT-)		 ±8 ±8
ESD Rating (ISO 10605)
RD= 330Ω, CS = 150pF/330pF
RD= 2KΩ, CS = 150pF/330pF		 Air Discharge
(DOUT+, DOUT-)		 ±15 ±15
Contact Discharge
(DOUT+, DOUT-)		 ±8 ±8
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
Supply Voltage (VDD33) 3.0 3.3 3.6 V
LVCMOS Supply Voltage (VDDIO) 3.0 3.3 3.6 V
OR
LVCMOS Supply Voltage (VDDIO) 1.71 1.8 1.89 V
Operating Free Air Temperature (TA) −40 +25 +105 °C
PCLK Frequency 5 85 MHz
Supply Noise 100 mVP-P

6.4 Thermal Information

THERMAL METRIC(1) WQFN UNIT
48 PINS
RθJA Junction-to-ambient thermal resistance 35 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 5.2
RθJB Junction-to-board thermal resistance 5.5
ψJT Junction-to-top characterization parameter 0.1
ψJB Junction-to-board characterization parameter 5.5
RθJC(bot) Junction-to-case (bottom) thermal resistance 1.3
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 DC Electrical Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified.(1)(2)(3)
PARAMETER TEST CONDITIONS PIN/FREQ. MIN TYP MAX UNIT
LVCMOS I/O DC SPECIFICATIONS
VIH High Level Input Voltage VDDIO = 3.0 to 3.6V PDB 2.0 VDDIO V
VIL Low Level Input Voltage VDDIO = 3.0 to 3.6V GND 0.8 V
IIN Input Current VIN = 0V or VDDIO = 3.0 to 3.6V −10 ±1 +10 μA
VIH High Level Input Voltage VDDIO = 3.0 to 3.6V DIN[23:0], HS, VS, DE, PCLK, I2S_CLK, I2S_WC, I2S_DA, I2S_DB 2.0 VDDIO V
VDDIO = 1.71 to 1.89V 0.65*
VDDIO		 VDDIO V
VIL Low Level Input Voltage VDDIO = 3.0 to 3.6V GND 0.8 V
VDDIO = 1.71 to 1.89V GND 0.35*
VDDIO		 V
IIN Input Current VIN = 0V or VDDIO VDDIO = 3.0
to 3.6V		 −10 ±1 +10 μA
VDDIO = 1.71
to 1.89V		 −10 ±1 +10 μA
VOH High Level Output Voltage IOH = −4mA VDDIO = 3.0 to 3.6V GPIO[3:0], GPO_REG[8:4] 2.4 VDDIO V
VDDIO = 1.71
to 1.89V		 VDDIO - 0.45 VDDIO V
VOL Low Level Output Voltage IOL = +4mA VDDIO = 3.0 to 3.6V GND 0.4 V
VDDIO = 1.71
to 1.89V		 GND 0.35 V
IOS Output Short Circuit Current VOUT = 0V −50 mA
IOZ TRI-STATE® Output Current VOUT = 0V or VDDIO, PDB = L, −10 +10 μA
FPD-LINK III CML DRIVER DC SPECIFICATIONS
VODp-p Differential Output Voltage
(DOUT+) – (DOUT-)		 RL = 100Ω,
See Figure 1		 DOUT+, DOUT- 1160 1250 1340 mVp-p
ΔVOD Output Voltage Unbalance 1 50 mV
VOS Offset Voltage – Single-ended RL = 100Ω,
See Figure 1		 2.5-0.25*VODp-p (TYP) V
ΔVOS Offset Voltage Unbalance
Single-ended		 1 50 mV
IOS Output Short Circuit Current DOUT+/- = 0V, PDB = L or H
 −38 mA
RT Internal Termination Resistor - Single ended 40 52 62 Ω
SERIAL CONTROL BUS
VIH Input High Level SDA and SCL 0.7*
VDD33		 VDD33 V
VIL Input Low Level Voltage SDA and SCL GND 0.3*
VDD33		 V
VHY Input Hysteresis >50 mV
VOL SDA, IOL = 1.25 mA 0 0.36 V
Iin SDA or SCL, VIN = VDD33 or GND -10 10 µA
Cin Input Capacitance SDA or SCL <5 pF
SUPPLY CURRENT
IDD1 Supply Current
(includes load current)
RL = 100Ω, f = 85MHz		 Checker Board Pattern,
See Figure 2		 VDD33= 3.6V VDD33 148 170 mA
IDDIO1 VDDIO = 3.6V VDDIO 90 180 μA
VDDIO = 1.89V 1 1.6 mA
IDDS1 Supply Current Remote Auto Power Down Mode 0x01[7] = 1, deserializer is powered down VDD33 = 3.6V VDD33 1.2 2.4 mA
IDDIOS1 VDDIO = 3.6V VDDIO 65 150 μA
VDDIO = 1.89V 55 150 μA
IDDS2 Supply Current Power Down PDB = L, All LVCMOS inputs are floating or tied to GND VDD33 = 3.6V VDD33 1 2 mA
IDDIOS2 VDDIO = 3.6V VDDIO 65 150 μA
VDDIO = 1.89V 50 150 μA
(1) The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not ensured.
(2) Typical values represent most likely parametric norms at VDD = 3.3 V, TA = +25 °C, and at the Recommended Operating Conditions at the time of product characterization and are not ensured.
(3) Current into device pins is defined as positive. Current out of a device pin is defined as negative. Voltages are referenced to ground except VOD and ΔVOD, which are differential voltages.
(4) Specification is ensured by characterization and is not tested in production.
(5) Specification is ensured by design and is not tested in production.
(6) Jitter Frequency is specified in conjunction with DS90UB926 PLL bandwidth.

6.6 AC Electrical Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified.(1)(2)(3)
PARAMETER TEST CONDITIONS PIN/FREQ. MIN TYP MAX UNIT
GPIO BIT RATE
BR Forward Channel Bit Rate See(4)(5) f = 5 – 85 MHz
GPIO[3:0]		 0.25* f Mbps
Back Channel Bit Rate 75 kbps
RECOMMENDED TIMING FOR PCLK
tTCP PCLK Period See(4)(5) PCLK 11.76 T 200 ns
tCIH PCLK Input High Time 0.4*T 0.5*T 0.6*T ns
tCIL PCLK Input Low Time 0.4*T 0.5*T 0.6*T ns
tCLKT PCLK Input Transition Time,
See Figure 3(4)(5)		 f = 5 MHz 4.0 ns
f = 85 MHz 0.5 ns
tIJIT PCLK Input Jitter Tolerance,
Bit Error Rate ≤10–10		 f / 40 < Jitter Freq < f / 20(4)(6)(4) f = 5 – 78MHz 0.4 0.6 UI

6.7 Recommended Timing for the Serial Control Bus

Over 3.3V supply and temperature ranges unless otherwise specified.
MIN TYP MAX UNIT
fSCL SCL Clock Frequency Standard Mode 0 100 kHz
Fast Mode 0 400 kHz
tLOW SCL Low Period Standard Mode 4.7 µs
Fast Mode 1.3 µs
tHIGH SCL High Period Standard Mode 4.0 µs
Fast Mode 0.6 µs
tHD;STA Hold time for a start or a repeated start condition,
See Figure 8		 Standard Mode 4.0 µs
Fast Mode 0.6 µs
tSU:STA Set Up time for a start or a repeated start condition,
See Figure 8		 Standard Mode 4.7 µs
Fast Mode 0.6 µs
tHD;DAT Data Hold Time,
See Figure 8		 Standard Mode 0 0.615 3.45 µs
Fast Mode 0 0.615 0.9 µs
tSU;DAT Data Set Up Time,
See Figure 8		 Standard Mode 250 0.56 ns
Fast Mode 100 0.56 ns
tSU;STO Set Up Time for STOP Condition,
See Figure 8		 Standard Mode 4.0 µs
Fast Mode 0.6 µs
tBUF Bus Free Time
Between STOP and START,
See Figure 8		 Standard Mode 4.7 µs
Fast Mode 1.3 µs
tr SCL and SDA Rise Time,
See Figure 8		 Standard Mode 430 1000 ns
Fast Mode 430 300 ns
tf SCL and SDA Fall Time,
See Figure 8		 Standard Mode 20 300 ns
Fast mode 20 300 ns
tsp input Filter 50 ns
30143362.gifFigure 1. Serializer VOD DC Output
30143346.gifFigure 2. Checkboard Data Pattern
30143330.gifFigure 3. Serializer Input Clock Transition Time
30143347.gifFigure 4. Serializer CML Output Load and Transition Time
30143361.gifFigure 5. Serializer Setup and Hold Times
30143349.gifFigure 6. Serializer Lock Time
30143348.gifFigure 7. Serializer CML Output Jitter
30143336.gifFigure 8. Serial Control Bus Timing Diagram

6.8 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS PIN/FREQ. MIN TYP MAX UNIT
tLHT CML Output Low-to-High Transition Time See Figure 4 DOUT+, DOUT- 80 130 ps
tHLT CML Output High-to-Low Transition Time 80 130 ps
tDIS Data Input Setup to PCLK See Figure 5 R[7:0], G[7:0], B[7:0], HS, VS, DE, PCLK, I2S_CLK, I2S_WC, I2S_DA 2.0 ns
tDIH Data Input Hold from PCLK 2.0 ns
tPLD Serializer PLL Lock Time See Figure 6(1) f = 15 - 45MHz 131*T ns
tSD Delay — Latency f = 15 - 45MHz 145*T ns
tTJIT Output Total Jitter,
Bit Error Rate ≥10-10
Figure 7(2)(3)(4)		 RL = 100Ω
f = 45MHz		 DOUT+, DOUT- 0.25 0.30 UI
(1) tPLD is the time required by the device to obtain lock when exiting power-down state with an active PCLK
(2) Specification is ensured by characterization and is not tested in production.
(3) Specification is ensured by design and is not tested in production.
(4) UI – Unit Interval is equivalent to one serialized data bit width 1UI = 1 / (35*PCLK). The UI scales with PCLK frequency.

6.9 Typical Charateristics

wvfrm01_serial78_snls407.gif
Note: On the rising edge of each clock period, the CML driver outputs a low Stop bit, high Start bit, and 33 DC-scrambled data bits.
Figure 9. Serializer CML Driver Output with 78 MHz TX Pixel Clock
wvfrm02_PCLK78_snls407.gif
Figure 10. Comparison of Deserializer LVCMOS RX PCLK Output Locked to a 78 MHz TX PCLK