ZHCSCS1D June   2014  – November 2020 DRV8801A-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Dissipation Ratings
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Supervisor
      2. 7.3.2 Bridge Control
        1. 7.3.2.1 MODE 1
        2. 7.3.2.2 MODE 2
      3. 7.3.3 Fast Decay with Synchronous Rectification
      4. 7.3.4 Slow Decay with Synchronous Rectification (Brake Mode)
      5. 7.3.5 Charge Pump
      6. 7.3.6 SENSE
      7. 7.3.7 VPROPI
        1. 7.3.7.1 Connecting VPROPI Output to ADC
      8. 7.3.8 Protection Circuits
        1. 7.3.8.1 VBB Undervoltage Lockout (UVLO)
        2. 7.3.8.2 Overcurrent Protection (OCP)
        3. 7.3.8.3 Overtemperature Warning (OTW)
        4. 7.3.8.4 Overtemperature Shutdown (OTS)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Drive Current
        2. 8.2.2.2 40
        3. 8.2.2.3 Slow-Decay SR (Brake Mode)
      3. 8.2.3 Thermal Considerations
        1. 8.2.3.1 Junction-to-Ambiant Thermal Impedance (ƟJA)
      4. 8.2.4 Pulse-Width Modulating
        1. 8.2.4.1 Pulse-Width Modulating ENABLE
        2. 8.2.4.2 Pulse-Width Modulating PHASE
      5. 8.2.5 Application Curves
    3. 8.3 Parallel Configuration
      1. 8.3.1 Parallel Connections
      2. 8.3.2 Non – Parallel Connections
      3. 8.3.3 Wiring nFAULT as Wired OR
      4. 8.3.4 Electrical Considerations
        1. 8.3.4.1 Device Spacing
        2. 8.3.4.2 Recirculation Current Handling
        3. 8.3.4.3 Sense Resistor Selection
        4. 8.3.4.4 Maximum System Current
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Power Dissipation
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 支持资源
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 静电放电警告
    7. 11.7 术语表
  12. 12Mechanical, Packaging, And Orderable Information

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10.3 Power Dissipation

First-order approximation of power dissipation in the DRV8801A-Q1 device can be calculated by examining the power dissipation in the full-bridge during each of the operation modes. The DRV8801A-Q1 device uses synchronous rectification. During the decay cycle, the body diode is shorted by the low-rDS(on) driver, which in turn reduces power dissipation in the full-bridge. In order to prevent shoot through (high-side and low-side drivers on the same side are ON at the same time), the DRV8801A-Q1 device implements a 500-ns typical crossover delay time. During this period, the body diode in the decay current path conducts the current until the DMOS driver turns on. High-current and high-ambient-temperature applications should take this into consideration. In addition, motor parameters and switching losses can add power dissipation that could affect critical applications.