ZHCSEF6E December   2014  – September 2016 DRV5033-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Magnetic Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Field Direction Definition
      2. 7.3.2 Device Output
      3. 7.3.3 Power-On Time
      4. 7.3.4 Output Stage
      5. 7.3.5 Protection Circuits
        1. 7.3.5.1 Overcurrent Protection (OCP)
        2. 7.3.5.2 Load Dump Protection
        3. 7.3.5.3 Reverse Supply Protection
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Standard Circuit
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Configuration Example
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Alternative Two-Wire Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
  9. 9 Power Supply Recommendations
  10. 10器件和文档支持
    1. 10.1 器件支持
      1. 10.1.1 器件命名规则
      2. 10.1.2 器件标记
    2. 10.2 社区资源
    3. 10.3 商标
    4. 10.4 静电放电警告
    5. 10.5 Glossary
  11. 11机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

10 器件和文档支持

10.1 器件支持

10.1.1 器件命名规则

Figure 23 显示了读取 DRV5033-Q1 器件完整器件名称的图例。

DRV5033-Q1 device_nomen_lis164.gif Figure 23. 器件命名规则

10.1.2 器件标记

DRV5033-Q1 package_sot_slis150.gif Figure 24. SOT-23 (DBZ) 封装
DRV5033-Q1 package_sip_slis150.gif Figure 25. TO-92 (LPG) 封装
DRV5033-Q1 inline_hall_sensor_slis150.gif 表示霍尔效应传感器（未按比例显示）。霍尔元件置于封装中央位置，容差为 ±100µm。在 DBZ 封装中，霍尔元件与封装底部的距离为 0.7mm ± 50µm；在 LPG 封装中，霍尔元件与封装底部的距离为 0.987mm ± 50µm。

10.2 社区资源

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

10.3 商标

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

10.4 静电放电警告

esds-image

这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损伤。

10.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.