ZHCSR40A March   2023  – March 2024 DLP781TE

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  Storage Conditions
    3. 5.3  ESD Ratings
    4. 5.4  Recommended Operating Conditions
    5.     11
    6. 5.5  Thermal Information
    7. 5.6  Electrical Characteristics
    8. 5.7  Timing Requirements
    9.     15
    10. 5.8  System Mounting Interface Loads
    11.     17
    12. 5.9  Micromirror Array Physical Characteristics
    13.     19
    14. 5.10 Micromirror Array Optical Characteristics
    15.     21
    16. 5.11 Window Characteristics
    17. 5.12 Chipset Component Usage Specification
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Power Interface
      2. 6.3.2 Timing
    4. 6.4 Device Functional Modes
    5. 6.5 Optical Interface and System Image Quality Considerations
      1. 6.5.1 Numerical Aperture and Stray Light Control
      2. 6.5.2 Pupil Match
      3. 6.5.3 Illumination Overfill
    6. 6.6 Micromirror Array Temperature Calculation
    7. 6.7 Micromirror Power Density Calculation
    8. 6.8 Window Aperture Illumination Overfill Calculation
    9. 6.9 Micromirror Landed-On/Landed-Off Duty Cycle
      1. 6.9.1 Definition of Micromirror Landed-On/Landed-Off Duty Cycle
      2. 6.9.2 Landed Duty Cycle and Useful Life of the DMD
      3. 6.9.3 Landed Duty Cycle and Operational DMD Temperature
      4. 6.9.4 Estimating the Long-Term Average Landed Duty Cycle of a Product or Application
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
    3. 7.3 Temperature Sensor Diode
    4. 7.4 Power Supply Recommendations
      1. 7.4.1 DMD Power Supply Requirements
      2. 7.4.2 DMD Power Supply Power-Up Procedure
      3. 7.4.3 DMD Power Supply Power-Down Procedure
    5. 7.5 Layout
      1. 7.5.1 Layout Guidelines
      2. 7.5.2 Layout Example
        1. 7.5.2.1 Layers
        2. 7.5.2.2 Impedance Requirements
        3. 7.5.2.3 Trace Width, Spacing
          1. 7.5.2.3.1 Voltage Signals
  9. 8 Device and Documentation Support
    1. 8.1 第三方产品免责声明
    2. 8.2 Device Support
      1. 8.2.1 Device Nomenclature
      2. 8.2.2 Device Markings
    3. 8.3 Documentation Support
      1. 8.3.1 Related Documentation
    4. 8.4 Trademarks
    5. 8.5 静电放电警告
    6. 8.6 术语表
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Package Option Addendum

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5.3 ESD Ratings

SYMBOL PARAMETER DESCRIPTION VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002(2) ±500 V
V(ESD) Electrostatic discharge (MBRST PINS) Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 ±150 V
(1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.