ZHCSGQ9 数据表 | 德州仪器 TI.com.cn

ZHCSGQ9 September 2017 CSD87503Q3E

PRODUCTION DATA.

T_A = 25°C (unless otherwise stated)

Figure 1. Transient Thermal Impedance


Note: Measurement taken with both gates tied together

Figure 2. Saturation Characteristics

I_D1D2 = 6 A

V_D1D2 = 15 V

Figure 4. Gate Charge

I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D1D2 = 6 A	V_D1D2 = 15 V
Note: Measurement taken with both gates tied together

Figure 8. Normalized On-State Resistance vs Temperature

	Single pulse, max R_θJC = 8°C/W

Figure 10. Maximum Safe Operating Area

Figure 12. Maximum Drain Current vs Temperature

	V_D1D2 = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching