ZHCSBO3F October   2013  – January 2022 CSD25483F4

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 术语表
  7. 7Mechanical Data
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD25483F4 Embossed Carrier Tape Dimensions

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YJC|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

4 Revision History

Changes from Revision E (October 2021) to Revision F (January 2022)

  • 将特性 中的最大高度从“0.35mm”更改为“0.36mm”Go
  • 将典型器件尺寸 的高度尺寸从“0.35mm”更改为“0.36mm”Go
  • Changed maximum height dimension from "0.35 mm" to "0.36 mm" in Mechanical Dimensions Go

Changes from Revision D (October 2014) to Revision E (October 2021)

  • 更新了整个文档中的表格、图和交叉参考的编号格式Go
  • Added footnote with link to support documentGo

Changes from Revision C (July 2014) to Revision D (October 2014)

  • Corrected timing VDS to read –10 V Go

Changes from Revision B (February 2014) to Revision C (July 2014)

Changes from Revision A (December 2013) to Revision B (February 2014)

  • 更新了特性中的“无铅且无卤素”Go
  • 添加了 IG 参数Go
  • Lowered IDSS limitGo
  • Lowered IGSS limitGo

Changes from Revision * (October 2013) to Revision A (December 2013)

  • 更正了电阻值的拼写错误Go