ZHCSCP6B January   2014  – April 2024 CSD19501KCS

PRODUCTION DATA  

  1.   1
  2. 1特性
  3. 2应用
  4. 3说明
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 第三方产品免责声明
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 接收文档更新通知
    4. 5.4 支持资源
    5. 5.5 Trademarks
    6. 5.6 静电放电警告
    7. 5.7 术语表
  7. 6Revision History
  8. 7Mechanical Data

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • KCS|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

4.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

CSD19501KCS Transient Thermal Impedance
Figure 4-1 Transient Thermal Impedance
CSD19501KCS Saturation Characteristics
Figure 4-2 Saturation Characteristics
CSD19501KCS Transfer Characteristics
Figure 4-3 Transfer Characteristics
CSD19501KCS Gate Charge
Figure 4-4 Gate Charge
CSD19501KCS Threshold Voltage vs Temperature
Figure 4-6 Threshold Voltage vs Temperature
CSD19501KCS Normalized On-State Resistance vs Temperature
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD19501KCS Maximum Safe Operating Area
Figure 4-10 Maximum Safe Operating Area
CSD19501KCS Maximum Drain Current vs Temperature
Figure 4-12 Maximum Drain Current vs Temperature
CSD19501KCS Capacitance
Figure 4-5 Capacitance
CSD19501KCS On-State Resistance vs Gate-to-Source Voltage
Figure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD19501KCS Typical Diode Forward Voltage
Figure 4-9 Typical Diode Forward Voltage
CSD19501KCS Single Pulse Unclamped Inductive Switching
Figure 4-11 Single Pulse Unclamped Inductive Switching