ZHCSEU7A March   2016  – March 2017 CSD18542KTT

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 接收文档更新通知
    2. 6.2 社区资源
    3. 6.3 商标
    4. 6.4 静电放电警告
    5. 6.5 Glossary
  7. 7机械、封装和可订购信息
    1. 7.1 KTT 封装尺寸
    2. 7.2 推荐的 PCB 布局
    3. 7.3 建议模板开口（模板厚度为 0.125mm）

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 60 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.5 1.8 2.2 V
RDS(on) Drain-to-source on resistance VGS = 4.5 V, ID = 100 A 4.0 5.1 mΩ
VGS = 10 V, ID = 100 A 3.3 4.0
gfs Transconductance VDS = 6 V, ID = 100 A 198 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 3900 5070 pF
Coss Output capacitance 570 740 pF
Crss Reverse transfer capacitance 11 14 pF
RG Series gate resistance 1.3 2.6 Ω
Qg Gate charge total (4.5 V) VDS = 30 V, ID = 100 A 21 27 nC
Qg Gate charge total (10 V) 44 57 nC
Qgd Gate charge gate-to-drain 6.9 nC
Qgs Gate charge gate-to-source 10 nC
Qg(th) Gate charge at Vth 7.3 nC
Qoss Output charge VDS = 30 V, VGS = 0 V 63 nC
td(on) Turnon delay time VDS = 30 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω		 6 ns
tr Rise time 5 ns
td(off) Turnoff delay time 18 ns
tf Fall time 21 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 100 A, VGS = 0 V 0.9 1.0 V
Qrr Reverse recovery charge VDS= 30 V, IF = 100 A,
di/dt = 300 A/μs		 148 nC
trr Reverse recovery time 53 ns

5.2 Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-case thermal resistance 0.6 °C/W
RθJA Junction-to-ambient thermal resistance 62 °C/W

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD18542KTT D001_SLPS590.png
Figure 1. Transient Thermal Impedance
CSD18542KTT D002_SLPS590.gif
Figure 2. Saturation Characteristics
CSD18542KTT D003_SLPS590.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD18542KTT D004_SLPS590.gif
ID = 100 A VDS = 30 V
Figure 4. Gate Charge
CSD18542KTT D006_SLPS590.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD18542KTT D008_SLPS590.gif
ID = 100 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD18542KTT D010_SLPS590.gif
Single pulse, max RθJC = 0.6°C/W
Figure 10. Maximum Safe Operating Area
CSD18542KTT D012_SLPS590.gif
Figure 12. Maximum Drain Current vs Temperature
CSD18542KTT D005_SLPS590.gif
Figure 5. Capacitance
CSD18542KTT D007_SLPS590_r2.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD18542KTT D009_SLPS590.gif
Figure 9. Typical Diode Forward Voltage
CSD18542KTT D011_SLPS590.gif
Figure 11. Single Pulse Unclamped Inductive Switching