ZHCSDN5A July   2014  – April 2024 CSD18535KCS

PRODUCTION DATA  

  1.   1
  2. 1特性
  3. 2应用
  4. 3说明
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 第三方产品免责声明
    2. 5.2 接收文档更新通知
    3. 5.3 支持资源
    4. 5.4 Trademarks
    5. 5.5 静电放电警告
    6. 5.6 术语表
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • KCS|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

4.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0V, ID = 250μA60V
IDSSDrain-to-Source Leakage CurrentVGS = 0V, VDS = 48V1μA
IGSSGate-to-Source Leakage CurrentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, ID = 250μA1.41.92.4V
RDS(on)Drain-to-Source On-ResistanceVGS = 4.5V, ID = 100A2.32.9mΩ
VGS = 10V, ID = 100A1.62.0mΩ
gfsTransconductanceVDS = 6V, ID = 100A263S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0V, VDS = 30V, ƒ = 1MHz50906620pF
CossOutput Capacitance8901150pF
CrssReverse Transfer Capacitance2431pF
RGSeries Gate Resistance0.81.6Ω
QgGate Charge Total (10V)VDS = 30V, ID = 100A6381nC
QgdGate Charge Gate-to-Drain10.4nC
QgsGate Charge Gate-to-Source15.7nC
Qg(th)Gate Charge at Vth9.4nC
QossOutput ChargeVDS = 30V, VGS = 0V140nC
td(on)Turn On Delay TimeVDS = 30V, VGS = 10V,
IDS = 100A, RG = 0Ω		9ns
trRise Time3ns
td(off)Turn Off Delay Time19ns
tfFall Time3ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = 100A, VGS = 0V0.91.0V
QrrReverse Recovery ChargeVDS= 30V, IF = 100A,
di/dt = 300A/μs		214nC
trrReverse Recovery Time63ns