ZHCSFY5A November   2016  – January 2017 CSD18514Q5A

PRODUCTION DATA.  

  1. 1特性
  2. 2应用范围
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 接收文档更新通知
    2. 6.2 社区资源
    3. 6.3 商标
    4. 6.4 静电放电警告
    5. 6.5 Glossary
  7. 7机械、封装和可订购信息
    1. 7.1 Q5A 封装尺寸
    2. 7.2 建议印刷电路板 (PCB) 布局
    3. 7.3 建议模板开口
    4. 7.4 Q5A 卷带信息

封装选项

机械数据 (封装 | 引脚)
  • DQJ|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

Specifications

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 40 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 32 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.5 1.8 2.4 V
RDS(on) Drain-to-source on resistance VGS = 4.5 V, ID = 14 A 6.0 7.9
VGS = 10 V, ID = 14 A 4.1 4.9
gfs Transconductance VDS = 4 V, ID = 14 A 59 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 20 V, ƒ = 1 MHz 2060 2680 pF
Coss Output capacitance 205 267 pF
Crss Reverse transfer capacitance 106 138 pF
RG Series gate resistance 1.3 2.6 Ω
Qg Gate charge total (4.5 V) VDS = 20 V, ID = 14 A 14 18 nC
Qg Gate charge total (10 V) 29 38 nC
Qgd Gate charge gate-to-drain 5.0 nC
Qgs Gate charge gate-to-source 6.0 nC
Qg(th) Gate charge at Vth 3.4 nC
Qoss Output charge VDS = 20 V, VGS = 0 V 9.2 nC
td(on) Turnon delay time VDS = 20 V, VGS = 10 V,
IDS = 14 A, RG = 0 Ω
13 ns
tr Rise time 22 ns
td(off) Turnoff delay time 14 ns
tf Fall time 6 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 14 A, VGS = 0 V 0.8 1.0 V
Qrr Reverse recovery charge VDS= 20 V, IF = 14 A,
di/dt = 300 A/μs
8.5 nC
trr Reverse recovery time 9 ns

Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-case thermal resistance(1) 1.7 °C/W
RθJA Junction-to-ambient thermal resistance(1)(2) 50
RθJC is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in
(3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
CSD18514Q5A M0137-01_LPS198.gif
Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of
2-oz (0.071-mm) thick Cu.
CSD18514Q5A M0137-02_LPS198.gif
Max RθJA = 125°C/W when mounted on a minimum pad area of
2-oz (0.071-mm) thick Cu.

Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD18514Q5A D001_SLPS625.png
Figure 1. Transient Thermal Impedance
CSD18514Q5A D002_SLPS625.gif
Figure 2. Saturation Characteristics
CSD18514Q5A D004_SLPS625A.gif
ID = 14 A, VDS = 20 V
Figure 4. Gate Charge
CSD18514Q5A D006_SLPS625.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD18514Q5A D008_SLPS625.gif
ID = 14 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD18514Q5A D010_SLPS625.gif
Single pulse, max RθJC= 1.7°C/W
Figure 10. Maximum Safe Operating Area
CSD18514Q5A D012_SLPS625.gif
Max RθJC= 1.7°C/W
Figure 12. Maximum Drain Current vs Temperature
CSD18514Q5A D003_SLPS625.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD18514Q5A D005_SLPS625.gif
Figure 5. Capacitance
CSD18514Q5A D007_SLPS625.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD18514Q5A D009_SLPS625.gif
Figure 9. Typical Diode Forward Voltage
CSD18514Q5A D011_SLPS625.gif
Figure 11. Single Pulse Unclamped Inductive Switching