ZHCSAB2B 数据表 | 德州仪器 TI.com.cn

ZHCSAB2B September 2012 – March 2024 CSD18503KCS

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

4.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0V, I_D = 250μA	40			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0V, V_DS = 32V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0V, V_GS = 20V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250μA	1.5	1.9	2.3	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5V, I_D = 75A		5.4	6.8	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10V, I_D = 75A		3.6	4.5	mΩ
g_fs	Transconductance	V_DS = 20V, I_D = 75A		98		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0V, V_DS = 20V, ƒ = 1MHz		2500	3150	pF
C_oss	Output Capacitance			480	600	pF
C_rss	Reverse Transfer Capacitance			12	16	pF
R_G	Series Gate Resistance			1.4	2.8	Ω
Q_g	Gate Charge Total (4.5V)	V_DS = 20V, I_D = 75A		15	18	nC
Q_g	Gate Charge Total (10V)			30	36	nC
Q_gd	Gate Charge Gate-to-Drain			4.6		nC
Q_gs	Gate Charge Gate-to-Source			7.7		nC
Q_g(th)	Gate Charge at Vth			4.7		nC
Q_oss	Output Charge	V_DS = 20V, V_GS = 0V		30		nC
t_d(on)	Turn On Delay Time	V_DS = 20V, V_GS = 10V, I_DS = 75A, R_G = 0Ω		5.7		ns
t_r	Rise Time			5.3		ns
t_d(off)	Turn Off Delay Time			14		ns
t_f	Fall Time			6.8		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 75A, V_GS = 0V		0.8	1	V
Q_rr	Reverse Recovery Charge	V_DS= 20V, I_F = 75A, di/dt = 300A/μs		60		nC
t_rr	Reverse Recovery Time	V_DS= 20V, I_F = 75A, di/dt = 300A/μs		37		ns