ZHCSDO7D May   2015  – February 2022 CSD17484F4

PRODUCTION DATA  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YJJ|3
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, IDS = 250 μA30V
IDSSDrain-to-source leakage currentVGS = 0 V, VDS = 24 V100nA
IGSSGate-to-source leakage currentVDS = 0 V, VGS = 12 V50nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = 250 μA0.650.851.10V
RDS(on)Drain-to-source on-resistanceVGS = 1.8 V, IDS = 0.5 A170270mΩ
VGS = 2.5 V, IDS = 0.5 A125160
VGS = 4.5 V, IDS = 0.5 A107128
VGS = 8 V, IDS = 0.5 A99121
gfsTransconductanceVDS = 15 V, IDS = 0.5 A4S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0 V, VDS = 15 V,
ƒ = 1 MHz		150195pF
CossOutput capacitance4457pF
CrssReverse transfer capacitance2.22.9pF
RGSeries gate resistance8Ω
QgGate charge total (4.5 V)VDS = 15 V, IDS = 0.5 A9201200pC
QgGate charge total (8.0 V)15702040pC
QgdGate charge gate-to-drain75pC
QgsGate charge gate-to-source280pC
Qg(th)Gate charge at Vth140pC
QossOutput chargeVDS = 15 V, VGS = 0 V1400pC
td(on)Turnon delay timeVDS = 15 V, VGS = 4.5 V,
IDS = 0.5 A, RG = 2 Ω		3ns
trRise time1ns
td(off)Turnoff delay time11ns
tfFall time4ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = 0.5 A, VGS = 0 V0.730.9V
QrrReverse recovery chargeVDS= 15 V, IF = 0.5 A, di/dt = 300 A/μs1300pC
trrReverse recovery time6.2ns