ZHCSQT9D November   1997  – July 2022 CD54HC365 , CD54HC366 , CD54HCT365 , CD74HC365 , CD74HC366 , CD74HCT365

PRODUCTION DATA  

  1. 特性
  2. 说明
  3. Revision History
  4. Pin Configuration and Functions
  5. Specifications
    1. 5.1 Absolute Maximum Ratings (1)
    2. 5.2 Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Electrical Characteristics
    5. 5.5 HCT Input Loading Table
    6. 5.6 Switching Characteristics
  6. Parameter Measurement Information
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Device Functional Modes
  8. Power Supply Recommendations
  9. Layout
    1. 9.1 Layout Guidelines
  10. 10Device and Documentation Support
    1. 10.1 接收文档更新通知
    2. 10.2 支持资源
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • N|16
  • D|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

PARAMETER TEST CONDITIONS VCC (V) 25℃ –40℃ to 85℃ –55℃ to 125℃ UNIT
VI (V) IO (mA) MIN TYP MAX MIN MAX MIN MAX
HC TYPES
VIH High level input voltage 2 1.5 1.5 1.5 V
4.5 3.15 3.15 3.15
6 4.2 4.2 4.2
VIL Low level input voltage 2 0.5 0.5 0.5 V
4.5 1.35 1.35 1.35
6 1.8 1.8 1.8
VOH

High level output voltage CMOS loads

VIH or VIL -0.02 2 1.9 1.9 1.9 V
-0.02 4.5 4.4 4.4 4.4
-0.02 6 5.9 5.9 5.9

High level output voltage TTL loads

-6 4.5 3.98 3.84 3.7
-7.8 6 5.48 5.34 5.2
VOL

Low level output voltage CMOS loads

VIH or VIL 0.02 2 0.1 0.1 0.1 V
0.02 4.5 0.1 0.1 0.1
0.02 6 0.1 0.1 0.1

Low level output voltage TTL loads

VIH or VIL 6 4.5 0.26 0.33 0.4
7.8 6 0.26 0.33 0.4
II Input leakage current VCC or GND 6 ±0.1 ±1 ±1 μA
ICC Quiescent device current VCC or GND 0 6 8 80 160 μA
IOZ Three-state leakage current VIH or VIL VO = VCC or GND 6 ±0.5 ±5 ±10 μA
HCT TYPES
VIH High level input voltage 4.5 to 5.5 2 2 2 V
VIL Low level input voltage 4.5 to 5.5 0.8 0.8 0.8 V
VOH

High level output voltage CMOS loads

VIH or VIL -0.02 4.5 4.4 4.4 4.4 V

High level output voltage TTL loads

-4 4.5 3.98 3.84 3.7
VOL

Low level output voltage CMOS loads

VIH or VIL 0.02 4.5 0.1 0.1 0.1 V

Low level output voltage TTL loads

4 4.5 0.26 0.33 0.4
II Input leakage current VCC or GND 0 5.5 ±0.1 ±1 ±1 μA
ICC Quiescent device current VCC or GND 0 5.5 8 80 160 μA
ΔICC Additional supply current per input pin: 1 Unit Load(1) VCC - 2.1 4.5 to 5.5 100 360 450 490 μA
IOZ Three-state leakage current VIL or VIH VO = VCC or GND 5.5 ±0.5 ±5 ±10 μA
For dual-supply systems theoretical worst case (VI = 2.4 V, VCC = 5.5 V) specification is 1.8 mA