ZHCSQU0 数据表 | 德州仪器 TI.com.cn

ZHCSQU0C November 1998 – July 2022 CD54HC640 , CD54HCT640 , CD74HC640 , CD74HCT640

PRODUCTION DATA

请参考 PDF 数据表获取器件具体的封装图。

5.5 Switching Characteristics⁽²⁾

Input t_t = 6ns. Unless otherwise specified, C_L = 50pF

PARAMETER		V_CC (V)	25°C			-40°C to 85°C		-55°C to 125°C		UNIT
PARAMETER		V_CC (V)	MIN	TYP	MAX	MIN	MAX	MIN	MAX	UNIT
HC TYPES
t_pd	Propagation delay A to B B to A	2			90		115		135	ns
		4.5		7⁽¹⁾	18		23		27
		6			15		20		23
t_pd	Propagation delay Output High-Z To high level, low level	2			150		190		225	ns
		4.5		12⁽¹⁾	30		38		45
		6			26		33		38
t_pd	Propagation delay Output high level Output lowe level to high Z	2			150		190		225	ns
		4.5		12⁽¹⁾	30		38		45
		6			26		33		38
t_t	Output transition time	2			60		75		90	ns
		4.5			12		15		18
		6			10		13		15
C_i	Input Capacitance		10		10		10		10	pF
C_O	Three-state output capacitance				20		20		20	pF
C_pd	Power dissipation capacitance ⁽³⁾⁽⁴⁾	5		38						pF
HCT TYPES
t_pd	Propagation delay A to B B to A	4.5		9⁽¹⁾	22		28		33	ns
t_pd	Propagation delay Output High-Z To high level, low level	4.5		12⁽¹⁾	30		38			ns
t_pd	Propagation delay Output high level Output lowe level to high Z	4.5		12⁽¹⁾	30		38			ns
t_t	Transition times	4.5			12		15			ns
C_i	Input capacitance		10		10		10			pF
C_O	Three-state output capacitance				20		20			pF
C_pd	Power dissipation capacitance ⁽³⁾⁽⁴⁾	5		41						pF

(1) Typical value tested at 5V, C_L = 15pF.

(2) For details on CMOS power calculation see, SCAA053B

(3) CPD is used to determine the dynamic power consumption, per channel

(4) P_D = V_CC² fi (C_PD + C_L) where f_i = Input Frequency, C_L = Output Load Capacitance, V_CC = Supply Voltage.