ZHCSO55B may   2021  – march 2023 CC2652R7

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
    1. 3.1 功能方框图
  4. Revision History
  5. Device Comparison
  6. Terminal Configuration and Functions
    1. 6.1 Pin Diagram – RGZ Package (Top View)
    2. 6.2 Signal Descriptions – RGZ Package
    3. 6.3 Connections for Unused Pins and Modules
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Power Supply and Modules
    5. 7.5  Power Consumption - Power Modes
    6. 7.6  Power Consumption - Radio Modes
    7. 7.7  Nonvolatile (Flash) Memory Characteristics
    8. 7.8  Thermal Resistance Characteristics
    9. 7.9  RF Frequency Bands
    10. 7.10 Bluetooth Low Energy - Receive (RX)
    11. 7.11 Bluetooth Low Energy - Transmit (TX)
    12. 7.12 Zigbee and Thread - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - RX
    13. 7.13 Zigbee and Thread - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - TX
    14. 7.14 Timing and Switching Characteristics
      1. 7.14.1 Reset Timing
      2. 7.14.2 Wakeup Timing
      3. 7.14.3 Clock Specifications
        1. 7.14.3.1 48 MHz Crystal Oscillator (XOSC_HF)
        2. 7.14.3.2 48 MHz RC Oscillator (RCOSC_HF)
        3. 7.14.3.3 2 MHz RC Oscillator (RCOSC_MF)
        4. 7.14.3.4 32.768 kHz Crystal Oscillator (XOSC_LF)
        5. 7.14.3.5 32 kHz RC Oscillator (RCOSC_LF)
      4. 7.14.4 Synchronous Serial Interface (SSI) Characteristics
        1. 7.14.4.1 Synchronous Serial Interface (SSI) Characteristics
        2.       36
      5. 7.14.5 UART
        1. 7.14.5.1 UART Characteristics
    15. 7.15 Peripheral Characteristics
      1. 7.15.1 ADC
        1. 7.15.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 7.15.2 DAC
        1. 7.15.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 7.15.3 Temperature and Battery Monitor
        1. 7.15.3.1 Temperature Sensor
        2. 7.15.3.2 Battery Monitor
      4. 7.15.4 Comparators
        1. 7.15.4.1 Low-Power Clocked Comparator
        2. 7.15.4.2 Continuous Time Comparator
      5. 7.15.5 Current Source
        1. 7.15.5.1 Programmable Current Source
      6. 7.15.6 GPIO
        1. 7.15.6.1 GPIO DC Characteristics
    16. 7.16 Typical Characteristics
      1. 7.16.1 MCU Current
      2. 7.16.2 RX Current
      3. 7.16.3 TX Current
      4. 7.16.4 RX Performance
      5. 7.16.5 TX Performance
      6. 7.16.6 ADC Performance
  8. Detailed Description
    1. 8.1  Overview
    2. 8.2  System CPU
    3. 8.3  Radio (RF Core)
      1. 8.3.1 Bluetooth 5.2 Low Energy
      2. 8.3.2 802.15.4 (Thread, Zigbee, 6LoWPAN)
    4. 8.4  Memory
    5. 8.5  Sensor Controller
    6. 8.6  Cryptography
    7. 8.7  Timers
    8. 8.8  Serial Peripherals and I/O
    9. 8.9  Battery and Temperature Monitor
    10. 8.10 µDMA
    11. 8.11 Debug
    12. 8.12 Power Management
    13. 8.13 Clock Systems
    14. 8.14 Network Processor
  9. Application, Implementation, and Layout
    1. 9.1 Reference Designs
    2. 9.2 Junction Temperature Calculation
  10. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Tools and Software
      1. 10.2.1 SimpleLink™ Microcontroller Platform
    3. 10.3 Documentation Support
    4. 10.4 支持资源
    5. 10.5 Trademarks
    6. 10.6 静电放电警告
    7. 10.7 术语表
  11. 11Mechanical, Packaging, and Orderable Information

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Junction Temperature Calculation

This section shows the different techniques for calculating the junction temperature under various operating conditions. For more details, see Semiconductor and IC Package Thermal Metrics.

There are three recommended ways to derive the junction temperature from other measured temperatures:

  1. From package temperature:
    Equation 1. T J = ψ JT × P + T case
  2. From board temperature:
    Equation 2. T J = ψ JB × P + T board
  3. From ambient temperature:
    Equation 3. T J = R θJA × P + T A

P is the power dissipated from the device and can be calculated by multiplying current consumption with supply voltage. Thermal resistance coefficients are found in Section 7.8.

Example:

Using Equation 3, the temperature difference between ambient temperature and junction temperature is calculated. In this example, we assume a simple use case where the radio is transmitting continuously at 0dBm output power. Let us assume the ambient temperature is 105 °C and the supply voltage is 3.0 V. To calculate P, we need to look up the current consumption for Tx at 105 °C in Figure 7-8. From the plot, we see that the current consumption is 8.1 mA. This means that P is 3.0 V × 8.1 mA = 194.4 mW.

The junction temperature is then calculated as:

Equation 4. T J = 23.4 ° C W × 194.4 m W + T A = 4.5 ° C + T A

As can be seen from the example, the junction temperature is 4.5 °C higher than the ambient temperature when running continuous Tx at 105 °C and, thus, well within the recommended operating conditions of 115 °C.

For various application use cases current consumption for other modules may have to be added to calculate the appropriate power dissipation. For example, the MCU may be running simultaneously as the radio, peripheral modules may be enabled, etc. Typically, the easiest way to find the peak current consumption, and thus the peak power dissipation in the device, is to measure as described in Measuring CC13xx and CC26xx Current Consumption.