SLUSBE7C March   2013  – January 2016

PRODUCTION DATA.  

  1. 1 Features
  2. 2  Applications
  3. 3  Description
  4. 4 Revision History
  5. 5 Device Options
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics: Supply Current
    6. 7.6  Digital Input and Output DC Characteristics
    7. 7.7  Power-On Reset
    8. 7.8  2.5-V LDO Regulator
    9. 7.9  Internal Clock Oscillators
    10. 7.10 ADC (Temperature and Cell Measurement) Characteristics
    11. 7.11 Integrating ADC (Coulomb Counter) Characteristics
    12. 7.12 Data Flash Memory Characteristics
    13. 7.13 I2C-Compatible Interface Communication Timing Characteristics
    14. 7.14 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Functional Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power Modes
        1. 8.4.1.1 BAT INSERT CHECK Mode
        2. 8.4.1.2 NORMAL Mode
        3. 8.4.1.3 SLEEP Mode
      2. 8.4.2 SLEEP+ Mode
      3. 8.4.3 HIBERNATE Mode
    5. 8.5 Programming
      1. 8.5.1 Data Commands
        1. 8.5.1.1 Standard Data Commands
          1. 8.5.1.1.1 Control(): 0x00/0x01
        2. 8.5.1.2 Charger Data Commands
      2. 8.5.2 Communications
        1. 8.5.2.1 I2C Interface
        2. 8.5.2.2 I2C Time-Out
        3. 8.5.2.3 I2C Command Waiting Time
        4. 8.5.2.4 I2C Clock Stretching
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 BAT Voltage Sense Input
        2. 9.2.2.2 SRP and SRN Current Sense Inputs
        3. 9.2.2.3 Sense Resistor Selection
        4. 9.2.2.4 TS Temperature Sense Input
        5. 9.2.2.5 Thermistor Selection
        6. 9.2.2.6 REGIN Power Supply Input Filtering
        7. 9.2.2.7 VCC LDO Output Filtering
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Power Supply Decoupling
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Sense Resistor Connections
      2. 11.1.2 Thermistor Connections
      3. 11.1.3 High-Current and Low-Current Path Separation
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

12 Device and Documentation Support

12.1 Documentation Support

12.1.1 Related Documentation

To obtain a copy of any of the following TI documents, go to the TI website at www.ti.com.

  • bq27531-G1 Technical Reference Manual User's Guide (SLUUA96)
  • bq27531EVM with bq27531 Battery Management Unit Impedance Track™ Fuel Gauge and bq24192 4.5-A, Switch-Mode Battery Charger for Single-Cell Applications User's Guide (SLUUA90)

12.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

12.3 Trademarks

Impedance Track, NanoFree, E2E are trademarks of Texas Instruments.

All other trademarks are the property of their respective owners.

12.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.