SLUS763D July   2007  – April 2016

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Down
      2. 7.3.2 Power-On Reset
      3. 7.3.3 Operation
        1. 7.3.3.1 Input Overvoltage Protection
        2. 7.3.3.2 Input Overcurrent Protection
        3. 7.3.3.3 Battery Overvoltage Protection
        4. 7.3.3.4 Thermal Protection
        5. 7.3.3.5 Enable Function
        6. 7.3.3.6 Fault Indication
    4. 7.4 Device Functional Modes
      1. 7.4.1 OPERATION Mode
      2. 7.4.2 POWER-DOWN Mode
      3. 7.4.3 POWER-ON RESET Mode
  8. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Selection of RBAT
        2. 8.2.2.2 Selection of RCE, RFAULT, and RPU
        3. 8.2.2.3 Selection of Input and Output Bypass Capacitors
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Powering Accessories
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Related Links
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DSG|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Input voltage IN (with respect to VSS) –0.3 30 V
OUT (with respect to VSS) –0.3 12
ILIM, FAULT, CE, VBAT (with respect to VSS) –0.3 7
Input current IN 2 A
Output current OUT 2 A
Output sink current FAULT 15 mA
Junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to the network ground terminal unless otherwise noted.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Input voltage 3.3 26 V
IIN Input current, IN pin 1.5 A
IOUT Output current, OUT pin 1.5 A
RILIM OCP programming resistor 15 90 kΩ
TJ Junction temperature 0 125 °C

6.4 Thermal Information

THERMAL METRIC(1) bq24314, bq24316 UNIT
DSG (WSON) DSJ (VSON)
8 PINS 12 PINS
RθJA Junction-to-ambient thermal resistance 58.6 49.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 67.9 60.1 °C/W
RθJB Junction-to-board thermal resistance 29.7 24.9 °C/W
ψJT Junction-to-top characterization parameter 1.2 2.4 °C/W
ψJB Junction-to-board characterization parameter 30.3 24.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 7.6 11.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over junction temperature range –40°C to 125°C and recommended supply voltage (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IN
UVLO Undervoltage lockout, input power detected threshold CE = Low, VIN increasing from 0 V to 3 V 2.6 2.7 2.8 V
VHYS-UVLO Hysteresis on UVLO CE = Low, VIN decreasing from 3 V to 0 V 200 260 300 mV
TDGL(PGOOD) Deglitch time, input power detected status CE = Low. Time measured from VIN 0 V → 5 V,
1-µs rise-time, to output turning ON 		8 ms
IDD Operating current CE = Low, No load on OUT pin,
VIN = 5 V, RILIM = 25 kΩ		 400 600 μA
ISTDBY Standby current CE = High, VIN = 5 V 65 95 μA
INPUT TO OUTPUT CHARACTERISTICS
VDO Drop-out voltage IN to OUT CE = Low, VIN = 5 V, IOUT = 1 A 170 280 mV
INPUT OVERVOLTAGE PROTECTION
VOVP Input overvoltage protection threshold bq24314 CE = Low, VIN increasing from 5 V to 7.5 V 5.71 5.85 6 V
bq24316 6.6 6.8 7 V
VHYS-OVP Hysteresis on OVP CE = Low, VIN decreasing from 7.5 V to 5 V 25 60 110 mV
INPUT OVERCURRENT PROTECTION
IOCP Input overcurrent protection threshold range 300 1500 mA
IOCP Input overcurrent protection threshold CE = Low, RILIM = 25 kΩ, 930 1000 1070 mA
BATTERY OVERVOLTAGE PROTECTION
BVOVP Battery overvoltage protection threshold CE = Low, VIN > 4.4 V 4.30 4.35 4.4 V
VHYS-BOVP Hysteresis on BVOVP CE = Low, VIN > 4.4 V 200 275 320 mV
IVBAT Input bias current on VBAT pin DSG Package VBAT = 4.4 V, TJ = 25°C 10 nA
DSJ Package VBAT = 4.4 V, TJ = 85°C 10
THERMAL PROTECTION
TJ(OFF) Thermal shutdown temperature 140 150 °C
TJ(OFF-HYS) Thermal shutdown hysteresis 20 °C
LOGIC LEVELS ON CE
VIL Low-level input voltage 0 0.4 V
VIH High-level input voltage 1.4 V
IIL Low-level input current VCE = 0 V 1 μA
IIH High-level input current VCE = 1.8 V 15 μA
LOGIC LEVELS ON FAULT
VOL Output low voltage ISINK = 5 mA 0.2 V
IHI-Z Leakage current, FAULT pin HI-Z VFAULT = 5 V 10 μA
(1) Not tested in production. Specified by design.

6.6 Timing Requirements

MIN NOM MAX UNIT
IN
tDGL(PGOOD) Deglitch time, input power detected status CE = Low. Time measured from VIN 0 V → 5 V, 1-μs rise-time,
to output turning ON		 8 ms
INPUT OVERVOLTAGE PROTECTION
tPD(OVP) Input OV propagation delay(1) CE = Low 1 μs
tON(OVP) Recovery time from input overvoltage condition CE = Low, Time measured from
VIN 7.5 V → 5 V, 1-μs fall-time		 8 ms
INPUT OVERCURRENT PROTECTION
tBLANK(OCP) Blanking time, input overcurrent detected 176 μs
tREC(OCP) Recovery time from input overcurrent condition 64 ms
BATTERY OVERVOLTAGE PROTECTION
tDGL(BOVP) Deglitch time, battery overvoltage detected CE = Low, VIN > 4.4 V. Time measured from VVBAT rising from 4.1 V to 4.4 V to FAULT going low. 176 μs

6.7 Typical Characteristics

Test conditions (unless otherwise noted) for typical operating performance: VIN = 5 V, CIN = 1 μF, COUT = 1 μF, RILIM = 25 kΩ, RBAT = 100 kΩ, TA = 25°C, VPU = 3.3 V (see Figure 11 for the Typical Application Circuit)

bq24314 bq24316 vuvlo_ta_lus763.gif Figure 1. Undervoltage Lockout vs Free-Air Temperature
bq24314 bq24316 vovp_ta_lus763.gif Figure 3. Overvoltage Threshold Protection (bq24316) vs Free-Air Temperature
bq24314 bq24316 iocp_rilm_lus763.gif Figure 5. Input Overcurrent Protection vs ILIM Resistance
bq24314 bq24316 bvop_ta_lus763.gif Figure 7. Battery Overvoltage Protection vs Free-Air Temperature
bq24314 bq24316 idd_vin_lus763.gif Figure 9. Supply Current (bq24314) vs Input Voltage
bq24314 bq24316 vdo_ta_lus763.gif Figure 2. Dropout Voltage (IN to OUT) vs Free-Air Temperature
bq24314 bq24316 vovp2_ta_lus763.gif Figure 4. Overvoltage Threshold Protection (bq24314) vs Free-Air Temperature
bq24314 bq24316 iocp_ta_lus763.gif Figure 6. Input Overcurrent Protection vs Free-Air Temperature
bq24314 bq24316 ivbat_ta_lus763.gif Figure 8. Leakage Current (VBAT Pin) vs Free-Air Temperature