SLUSAD2C November   2010  – April 2015

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Battery Voltage Regulation
      2. 9.3.2  Battery Current Regulation
      3. 9.3.3  Battery Precharge Current Regulation
      4. 9.3.4  Input Current Regulation
      5. 9.3.5  Charge Termination, Recharge, and Safety Timers
      6. 9.3.6  Power Up
      7. 9.3.7  Input Undervoltage Lockout (UVLO)
      8. 9.3.8  Input Overvoltage/Undervoltage Protection
      9. 9.3.9  Enable and Disable Charging
      10. 9.3.10 System Power Selector
      11. 9.3.11 Converter Operation
      12. 9.3.12 Automatic Internal Soft-Start Charger Current
      13. 9.3.13 Charge Overcurrent Protection
      14. 9.3.14 Charge Undercurrent Protection
      15. 9.3.15 Battery Detection
        1. 9.3.15.1 Example
      16. 9.3.16 Battery Short Protection
      17. 9.3.17 Battery Overvoltage Protection
      18. 9.3.18 Temperature Qualification
      19. 9.3.19 MOSFET Short Circuit and Inductor Short Circuit Protection
      20. 9.3.20 Thermal Regulation and Shutdown Protection
      21. 9.3.21 Timer Fault Recovery
      22. 9.3.22 Inductor, Capacitor, and Sense Resistor Selection Guidelines
      23. 9.3.23 Charge Status Outputs
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Inductor Selection
        2. 10.2.2.2 Input Capacitor
        3. 10.2.2.3 Output Capacitor
        4. 10.2.2.4 Input Filter Design
        5. 10.2.2.5 Input ACFET and RBFET Selection
      3. 10.2.3 Application Curve
    3. 10.3 System Examples
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Examples
  13. 13Device and Documentation Support
    1. 13.1 Related Links
    2. 13.2 Trademarks
    3. 13.3 Electrostatic Discharge Caution
    4. 13.4 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8 Specifications

8.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)(2)
MIN MAX UNIT
Voltage (with respect to AGND) PVCC –0.3 20 V
AVCC, ACP, ACN, ACDRV, CMSRC, STAT –0.3 30
BTST –0.3 26
BATDRV, SRP, SRN –0.3 20
SW –2 20
FB (bq24172) –0.3 16
OVPSET, REGN, TS, TTC, CELL (bq24170) –0.3 7
VREF, ISET, ACSET –0.3 3.6
PGND –0.3 0.3
Maximum difference voltage SRP–SRN, ACP-ACN –0.5 0.5 V
Junction temperature, TJ –40 155 °C
Storage temperature, Tstg –55 155 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND if not specified. Currents are positive into, negative out of the specified terminal. Consult packaging section of the data book for thermal limitations and considerations of packages.

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) 1000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) 250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions

MIN MAX UNIT
Input voltage VIN 4.5 17 V
Output voltage VOUT 13.5 V
Output current (RSR 10 mΩ) IOUT 0.6 4 A
Maximum difference voltage ACP – ACN –200 200 mV
SRP – SRN –200 200
Operation free-air temperature, TA –40 85 °C

8.4 Thermal Information

THERMAL METRIC(1) bq2417x UNIT
RGY [VQFN]
24 PINS
RθJA Junction-to-ambient thermal resistance 35.7 °C/W
ψJT Junction-to-top characterization parameter 0.4
ψJB Junction-to-board characterization parameter 31.2
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

8.5 Electrical Characteristics

4.5 V ≤ V(PVCC, AVCC) ≤ 17 V, –40°C < TJ + 125°C, typical values are at TA = 25°C, with respect to AGND (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OPERATING CONDITIONS
VAVCC_OP AVCC input voltage operating range during charging 4.5 17 V
QUIESCENT CURRENTS
IBAT Battery discharge current (sum of currents into AVCC, PVCC, ACP, ACN) VAVCC > VUVLO, VSRN > VAVCC (SLEEP), TJ = 0°C to 85°C 15 µA
BTST, SW, SRP, SRN, VAVCC > VUVLO, VAVCC > VSRN, ISET < 40 mV, VBAT=12.6 V, Charge disabled 25
BTST, SW, SRP, SRN, VAVCC > VUVLO, VAVCC > VSRN, ISET > 120 mV, VBAT=12.6 V, Charge done 25
IAC Adapter supply current (sum of current into AVCC,ACP, ACN) VAVCC > VUVLO, VAVCC > VSRN, ISET < 40 mV, VBAT=12.6 V, Charge disabled 1.2 1.5 mA
VAVCC > VUVLO, VAVCC > VSRN, ISET > 120 mV, Charge enabled, no switching 2.5 5
VAVCC > VUVLO, VAVCC > VSRN, ISET > 120 mV, Charge enabled, switching 15(2)
CHARGE VOLTAGE REGULATION
VBAT_REG SRN regulation voltage (bq24170) CELL to AGND, 1 cell, measured on SRN 4.2 V
CELL floating, 2 cells, measured on SRN 8.4 V
CELL to VREF, 3 cells, measured on SRN 12.6 V
VFB_REG Feddback regulation voltage (bq24172) Measured on FB 2.1 V
Charge voltage regulation accuracy TJ = 0°C to 85°C –0.5% 0.5%
TJ = –40°C to 125°C –0.7% 0.7%
IFB Leakage current into FB pin (bq24172) VFB = 2.1 V 100 nA
CURRENT REGULATION – FAST CHARGE
VISET ISET Voltage Range RSENSE = 10 mΩ 0.12 0.8 V
KISET Charge Current Set Factor (Amps of Charge Current per Volt on ISET pin) RSENSE = 10 mΩ 5 A/V
Charge Current Regulation Accuracy
(with Schottky diode on SW)		 VSRP-SRN = 40 mV –4% 4%
VSRP-SRN = 20 mV –7% 7%
VSRP-SRN = 5 mV –25% 25%
VISET_CD Charge Disable Threshold ISET falling 40 50 mV
VISET_CE Charge Enable Threshold ISET rising 100 120 mV
IISET Leakage Current into ISET VISET = 2 V 100 nA
INPUT CURRENT REGULATION
KDPM Input DPM Current Set Factor (Amps of Input Current per Volt on ACSET) RSENSE = 10mΩ 5 A/V
Input DPM Current Regulation Accuracy
(with Schottky diode on SW)		 VACP-ACN = 80 mV –4% 4%
VACP-ACN = 40 mV –9% 9%
VACP-ACN = 20 mV –15% 15%
VACP-ACN = 5 mV –20% 20%
VACP-ACN = 2.5 mV -40% 40%
IACSET Leakage Current into ACSET pin VACSET = 2V 100 nA
CURRENT REGULATION – PRECHARGE
KIPRECHG Precharge current set factor Percentage of fast charge current 10%(1)
Precharge current regulation accuracy VSRP-SRN = 4 mV –25% 25%
VSRP-SRN = 2 mV –40% 40%
CHARGE TERMINATION
KTERM Termination current set factor Percentage of fast charge current 10%(1)
Termination current regulation accuracy VSRP-SRN = 4 mV –25% 25%
VSRP-SRN = 2 mV –40% 40%
tTERM_DEG Deglitch time for termination (both edges) 100 ms
tQUAL Termination qualification time VSRN > VRECH and ICHG < ITERM 250 ms
IQUAL Termination qualification current Discharge current once termination is detected 2 mA
INPUT UNDERVOLTAGE LOCKOUT COMPARATOR (UVLO)
VUVLO AC undervoltage rising threshold Measure on AVCC 3.4 3.6 3.8 V
VUVLO_HYS AC undervoltage hysteresis, falling Measure on AVCC 300 mV
SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION)
VSLEEP SLEEP mode threshold VAVCC – VSRN falling 50 90 150 mV
VSLEEP_HYS SLEEP mode hysteresis VAVCC – VSRN rising 200 mV
tSLEEP_FALL_CD SLEEP deglitch to disable charge VAVCC – VSRN falling 1 ms
tSLEEP_FALL_FETOFF SLEEP deglitch to turn off input FETs VAVCC – VSRN falling 5 ms
tSLEEP_FALL Deglitch to enter SLEEP mode, disable VREF and enter low quiescent mode VAVCC – VSRN falling 100 ms
tSLEEP_PWRUP Deglitch to exit SLEEP mode, and enable VREF VAVCC – VSRN rising 30 ms
ACN-SRN COMPARATOR
VACN-SRN Threshold to turn on BATFET VACN-SRN falling 150 220 300 mV
VACN-SRN_HYS Hysteresis to turn off BATFET VACN-SRN rising 100 mV
tBATFETOFF_DEG Deglitch to turn on BATFET VACN-SRN falling 2 ms
tBATFETON_DEG Deglitch to turn off BATFET VACN-SRN rising 50 µs
BAT LOWV COMPARATOR
VLOWV Precharge to fast charge transition bq24170, CELL to AGND, 1 cell, measure on SRN 2.87 2.9 2.93 V
bq24170, CELL floating, 2 cells, measure on SRN 5.74 5.8 5.86
bq24170, CELL to VREF, 3 cells, measure on SRN 8.61 8.7 8.79
bq24172, measure on FB 1.43 1.45 1.47
VLOWV_HYS Fast charge to precharge hysteresis bq24170, CELL to AGND, 1 cell, measure on SRN 200 mV
bq24170, CELL floating, 2 cells, measure on SRN 400
bq24170, CELL to VREF, 3 cells, measure on SRN 600
bq24172, measure on FB 100
tpre2fas VLOWV rising deglitch Delay to start fast charge current 25 ms
tfast2pre VLOWV falling deglitch Delay to start precharge current 25 ms
RECHARGE COMPARATOR
VRECHG Recharge Threshold, below regulation voltage limit, VBAT_REG-VSRN (bq24170), or VFB_REG-VFB (bq24172) bq24170, CELL to AGND, 1 cell, measure on SRN 70 100 130 mV
bq24170, CELL floating, 2 cells, measure on SRN 140 200 260
bq24170, CELL to VREF, 3 cells, measure on SRN 210 300 390
bq24172, measure on FB 35 50 65
tRECH_RISE_DEG VRECHG rising deglitch VFB decreasing below VRECHG 10 ms
tRECH_FALL_DEG VRECHG falling deglitch VFB increasing above VRECHG 10 ms
BAT OVERVOLTAGE COMPARATOR
VOV_RISE Overvoltage rising threshold As percentage of VBAT_REG (bq24170) or VFB_REG (bq24172) 104%
VOV_FALL Overvoltage falling threshold As percentage of VSRN (bq24170) or VFB_REG (bq24172) 102%
INPUT OVERVOLTAGE COMPARATOR (ACOV)
VACOV AC Overvoltage Rising Threshold to turn off ACFET OVPSET rising 1.57 1.6 1.63 V
VACOV_HYS AC overvoltage falling hysteresis OVPSET falling 50 mV
tACOV_RISE_DEG AC Overvoltage Rising Deglitch to turn off ACFET and Disable Charge OVPSET rising 1 µs
tACOV_FALL_DEG AC Overvoltage Falling Deglitch to turn on ACFET OVPSET falling 30 ms
INPUT UNDERVOLTAGE COMPARATOR (ACUV)
VACUV AC Undervoltage Falling Threshold to turn off ACFET OVPSET falling 0.487 0.497 0.507 V
VACUV_HYS AC Undervoltage Rising Hysteresis OVPSET rising 100 mV
tACOV_FALL_DEG AC Undervoltage Falling Deglitch to turn off ACFET and Disable Charge OVPSET falling 1 µs
tACOV_RISE_DEG AC Undervoltage Rising Deglitch to turn on ACFET OVPSET rising 30 ms
THERMAL REGULATION
TJ_REG Junction Temperature Regulation Accuracy ISET > 120 mV, Charging 120 °C
THERMAL SHUTDOWN COMPARATOR
TSHUT Thermal shutdown rising temperature Temperature rising 150 °C
TSHUT_HYS Thermal shutdown hysteresis Temperature falling 20 °C
tSHUT_RISE_DEG Thermal shutdown rising deglitch Temperature rising 100 µs
tSHUT_FALL_DEG Thermal shutdown falling deglitch Temperature falling 10 ms
THERMISTOR COMPARATOR
VLTF Cold Temperature Threshold, TS pin Voltage Rising Threshold Charger suspends charge. As percentage to VVREF 72.5% 73.5% 74.5%
VLTF_HYS Cold Temperature Hysteresis, TS pin Voltage Falling As percentage to VVREF 0.2% 0.4% 0.6%
VHTF Hot Temperature TS pin voltage rising Threshold As percentage to VVREF 46.6% 47.2% 48.8%
VTCO Cut-off Temperature TS pin voltage falling Threshold As percentage to VVREF 44.2% 44.7% 45.2%
tTS_CHG_SUS Deglitch time for Temperature Out of Range Detection VTS > VLTF, or VTS < VTCO, or
VTS < VHTF		 20 ms
tTS_CHG_RESUME Deglitch time for Temperature in Valid Range Detection VTS < VLTF – VLTF_HYS or VTS >VTCO, or VTS > VHTF 400 ms
CHARGE OVERCURRENT COMPARATOR (CYCLE-BY-CYCLE)
VOCP_CHRG Charge Overcurrent Rising Threshold, VSRP > 2.2 V Current as percentage of fast charge current 160%
VOCP_MIN Charge Overcurrent Limit Min, VSRP < 2.2 V Measure VSRP-SRN 45 mV
VOCP_MAX Charge Overcurrent Limit Max, VSRP > 2.2 V Measure VSRP-SRN 75 mV
HSFET OVERCURRENT COMPARATOR (CYCLE-BY-CYCLE)
IOCP_HSFET Current limit on HSFET Measure on HSFET 8 11.5 A
CHARGE UNDERCURRENT COMPARATOR (CYCLE-BY-CYCLE)
VUCP Charge undercurrent falling threshold Measure on V(SRP-SRN) 1 5 9 mV
BAT SHORT COMPARATOR
VBATSHT Battery short falling threshold Measure on SRN 2 V
VBATSHT_HYS Battery short rising hysteresis Measure on SRN 200 mV
tBATSHT_DEG Deglitch on both edges 1 µs
VBATSHT Charge Current during BATSHORT Percentage of fast charge current 10%(1)
VREF REGULATOR
VVREF_REG VREF regulator voltage VAVCC > VUVLO, No load 3.267 3.3 3.333 V
IVREF_LIM VREF current limit VVREF = 0 V, VAVCC > VUVLO 35 90 mA
REGN REGULATOR
VREGN_REG REGN regulator voltage VAVCC > 10 V, ISET > 120 mV 5.7 6 6.3 V
IREGN_LIM REGN current limit VREGN = 0 V, VAVCC > 10 v, ISET > 120 mV 40 120 mA
TTC INPUT
tprechrg Precharge Safety Timer Precharge time before fault occurs 1620 1800 1980 s
tfastchrg Fast Charge Timer Range Tchg = CTTC*KTTC 1 10 hr
Fast Charge Timer Accuracy –10% 10%
KTTC Timer Multiplier 5.6 min/nF
VTTC_LOW TTC Low Threshold TTC falling 0.4 V
ITTC TTC Source/Sink Current 45 50 55 µA
VTTC_OSC_HI TTC oscillator high threshold 1.5 V
VTTC_OSC_LO TTC oscillator low threshold 1 V
BATTERY SWITCH (BATFET) DRIVER
RDS_BAT_OFF BATFET Turnoff Resistance VAVCC > 5 V 100 Ω
RDS_BAT_ON BATFET Turnon Resistance VAVCC > 5 V 20 kΩ
VBATDRV_REG BATFET Drive Voltage VBATDRV_REG =VACN - VBATDRV when VAVCC > 5 V and BATFET is on 4.2 7 V
tBATFET_DEG BATFET Power-up Delay to turn off BATFET after adapter is detected 30 ms
AC SWITCH (ACFET) DRIVER
IACFET ACDRV Charge Pump Current Limit VACDRV - VCMSRC = 5 V 60 µA
VACDRV_REG Gate Drive Voltage on ACFET VACDRV - VCMSRC when VAVCC > VUVLO 4.2 6 V
RACDRV_LOAD Maximum load between ACDRV and CMSRC 500 kΩ
AC/BAT SWITCH DRIVER TIMING
tDRV_DEAD Driver Dead Time Dead Time when switching between ACFET and BATFET 10 µs
BATTERY DETECTION
tWAKE Wake timer Max time charge is enabled 500 ms
IWAKE Wake current RSENSE = 10 mΩ 50 125 200 mA
tDISCHARGE Discharge timer Max time discharge current is applied 1 s
IDISCHARGE Discharge current 8 mA
IFAULT Fault current after a time-out fault 2 mA
VWAKE Wake threshold with respect to VREG To detect battery absent during WAKE Measure on SRN (bq24170) 100 mV/cell
Measure on FB (bq24172) 50 mV
VDISCH Discharge Threshold to detect battery absent during discharge Measure on SRN (bq24170) 2.9 V/cell
Measure on VFB (bq24172) 1.45 V
INTERNAL PWM
fsw PWM Switching Frequency 1360 1600 1840 kHz
tSW_DEAD Driver Dead Time(2) Dead time when switching between LSFET and HSFET no load 30 ns
RDS_HI High-Side MOSFET ON-Resistance VBTST – VSW = 4.5 V 25 45 mΩ
RDS_LO Low-Side MOSFET ON-Resistance 60 110 mΩ
VBTST_REFRESH Bootstrap Refresh Comparator Threshold Voltage VBTST – VSW when low-side refresh pulse is requested, VAVCC = 4.5 V 3 V
VBTST – VSW when low-side refresh pulse is requested, VAVCC > 6 V 4
INTERNAL SOFT START (8 steps to regulation current ICHG)
SS_STEP Soft start steps 8 step
TSS_STEP Soft start step time 1.6 3 ms
CHARGER SECTION POWER-UP SEQUENCING
tCE_DELAY Delay from ISET above 120 mV to start charging battery 1.5 s
INTEGRATED BTST DIODE
VF Forward Bias Voltage IF = 120 mA at 25°C 0.85 V
VR Reverse breakdown voltage IR = 2 µA at 25°C 20 V
LOGIC IO PIN CHARACTERISTICS (STAT1, STAT2, TERM_EN)
VOUT_LO STAT Output Low Saturation Voltage Sink Current = 5 mA 0.5 V
VCELL_LO CELL pin input low threshold, 1 cell (bq24170) CELL pin voltage falling edge 0.5 V
VCELL_MID CELL pin input mid threshold, 2 cells (bq24170) CELL pin voltage rising for MIN, falling for MAX 0.8 1.8 V
VCELL_HI CELL pin input high threshold, 3 cells (bq24170) CELL pin voltage rising edge 2.5 V
(1) The minimum current is 120 mA on 10-mΩ sense resistor.
(2) Specified by design.

8.6 Typical Characteristics

Table 1. Table of Graphs(1)

FIGURE DESCRIPTION
Figure 1 AVCC, VREF, ACDRV and STAT Power Up (ISET=0)
Figure 2 Charge Enable by ISET
Figure 3 Current Soft Start
Figure 4 Charge Disable by ISET
Figure 5 Continuous Conduction Mode Switching
Figure 6 Discontinuous Conduction Mode Switching
Figure 7 BATFET to ACFET Transition during Power Up
Figure 8 System Load Transient (Input Current DPM)
Figure 9 Battery Insertion and Removal
Figure 10 Battery to Ground Short Protection
Figure 11 Battery to Ground Short Transition
Figure 12 Efficiency vs Output Current (VIN = 15 V)
Figure 13 Efficiency vs Output Current (VOUT = 3.8 V)
(1) All waveforms and data are measured on HPA610 and HPA706 EVMs.
bq24170 bq24172 tc1_lusad2.gif
Figure 1. Power Up (ISET = 0)
bq24170 bq24172 tc3_lusad2.gif
Figure 3. Current Soft Start
bq24170 bq24172 tc5_lusad2.gif
Figure 5. Continuous Conduction Mode Switching
bq24170 bq24172 tc7_lusad2.gif
Figure 7. BATFET to ACFET Transition During Power Up
bq24170 bq24172 tc9_lusad2.gif
Figure 9. Battery Insertion and Removal
bq24170 bq24172 tc11_lusad2.gif
Figure 11. Battery-to-Ground Short Transition
bq24170 bq24172 tc13_lusad2.gif
Figure 13. Efficiency vs Output Current (VOUT = 3.8 V)
bq24170 bq24172 tc2_lusad2.gif
Figure 2. Charge Enable by ISET
bq24170 bq24172 tc4_lusad2.gif
Figure 4. Charge Disable by ISET
bq24170 bq24172 tc6_lusad2.gif
Figure 6. Discontinuous Conduction Mode Switching
bq24170 bq24172 tc8_lusad2.gif
Figure 8. System Load Transient (Input Current DPM)
bq24170 bq24172 tc10_lusad2.gif
Figure 10. Battery-to-Ground Short Protection
bq24170 bq24172 tc12_lusad2.gif
Figure 12. Efficiency vs Output Current (VIN = 15 V)