ZHCSH46A December   2017  – June 2018 AMC1311

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      简化原理图
  4. 修订历史记录
  5. 器件比较表
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Insulation Characteristics Curves
    12. 7.12 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Analog Input
      2. 8.3.2 Isolation Channel Signal Transmission
      3. 8.3.3 Fail-Safe Output
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Do's and Don'ts
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 接收文档更新通知
      2. 12.1.2 相关文档
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics

minimum and maximum specifications of the AMC1311 apply from TA = –40°C to +125°C, VDD1 = 4.5 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, VIN = –0.1 V to 2 V, and SHTDN = GND1 = 0 V; minimum and maximum specifications of the AMC1311B apply from TA = –55°C to +125°C, VDD1 = 3.0 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, VIN = –0.1 V to 2 V, and SHTDN = GND1 = 0 V; typical specifications are at TA = 25°C, VDD1 = 5 V, and VDD2 = 3.3 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUT
VOS Input offset voltage(1) AMC1311, initial, at TA = 25°C, VIN = GND1 –9.9 ±0.4 9.9 mV
AMC1311B, initial, at TA = 25°C,
VIN = GND1, 4.5 V ≤ VDD1 ≤ 5.5 V
–1.5 ±0.4 1.5
AMC1311B, initial, at TA = 25°C,
VIN = GND1, 3.0 V ≤ VDD1 ≤ 5.5 V(2)
–2.5 –1.1 2.5
TCVOS Input offset drift(1) AMC1311 ±20 µV/°C
AMC1311B –15 ±3 15
CIN Input capacitance(3) fIN = 275 kHz 7 pF
RIN Input resistance(3) 1 GΩ
IIB Input bias current VIN = GND1 –15 3.5 15 nA
TCIIB Input bias current drift ±10 pA/°C
ANALOG OUTPUT
Nominal gain 1
EG Gain error(1) AMC1311, initial, at TA = 25°C –1% 0.4% 1%
AMC1311B, initial, at TA = 25°C –0.3% ±0.05% 0.3%
TCEG Gain error drift(1) AMC1311 ±30 ppm/°C
AMC1311B –45 ±5 45
Nonlinearity(1) –0.04% ±0.01% 0.04%
Nonlinearity drift 1 ppm/°C
THD Total harmonic distortion VIN = 2 V, fIN = 10 kHz, BW = 100 kHz –87 dB
Output noise VIN = GND1, BW = 100 kHz 220 μVRMS
SNR Signal-to-noise ratio VIN = 2 V, fIN = 1 kHz, BW = 10 kHz 79 82.6 dB
VIN = 2 V, fIN = 10 kHz, BW = 100 kHz 70.9
PSRR Power-supply rejection ratio(4) PSRR vs VDD1, at dc –65 dB
PSRR vs VDD1, 100-mV and 10-kHz ripple –65
PSRR vs VDD2, at dc –85
PSRR vs VDD2, 100-mV and 10-kHz ripple –70
VCMout Common-mode output voltage 1.39 1.44 1.49 V
VFAILSAFE Failsafe differential output voltage VOUTP – VOUTN, SHTDN = high,
or VDD1 ≤ VDD1UV, or VDD1 missing
–2.6 –2.5 V
BW Output bandwidth AMC1311 100 220 kHz
AMC1311B 220 275
ROUT Output resistance On VOUTP or VOUTN < 0.2 Ω
Output short-circuit current ±13 mA
CMTI Common-mode transient immunity |GND1 – GND2| = 1 kV, AMC1311 15 30 kV/µs
|GND1 – GND2| = 1 kV, AMC1311B 75 140
DIGITAL INPUT (SHTDN Pin: CMOS Logic Family, CMOS With Schmitt-Trigger)
IIN Input current GND1 ≤ VSHTDN ≤ VDD1 –70 1 µA
CIN Input capacitance 5 pF
VIH High-level input voltage 0.7 × VDD1 VDD1 + 0.3 V
VIL Low-level input voltage –0.3 0.3 × VDD1 V
POWER SUPPLY
VDD1UV VDD1 undervoltage detection threshold voltage VDD1 falling 1.75 2.53 2.7 V
IDD1 High-side supply current AMC1311B only, 3.0 V ≤ VDD1 ≤ 3.6 V, SHTDN = low 6 8.4 mA
4.5 V ≤ VDD1 ≤ 5.5 V, SHTDN = low 7.1 9.7
SHTDN = high 1.3 µA
IDD2 Low-side supply current 3.0 V ≤ VDD2 ≤ 3.6 V 5.3 7.2 mA
4.5 V ≤ VDD2 ≤ 5.5 V 5.9 8.1
The typical value includes one sigma statistical variation.
The typical value is at VDD1 = 3.3 V.
See the Analog Input section for more details.
This parameter is output referred.