ZHCSFO6A November   2016  – June 2017 ADS8900B , ADS8902B , ADS8904B

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 LDO Module
      2. 7.3.2 Reference Buffer Module
      3. 7.3.3 Converter Module
        1. 7.3.3.1 Sample-and-Hold Circuit
        2. 7.3.3.2 Internal Oscillator
        3. 7.3.3.3 ADC Transfer Function
      4. 7.3.4 Interface Module
    4. 7.4 Device Functional Modes
      1. 7.4.1 RST State
      2. 7.4.2 ACQ State
      3. 7.4.3 CNV State
    5. 7.5 Programming
      1. 7.5.1 Output Data Word
      2. 7.5.2 Data Transfer Frame
      3. 7.5.3 Interleaving Conversion Cycles and Data Transfer Frames
      4. 7.5.4 Data Transfer Protocols
        1. 7.5.4.1 Protocols for Configuring the Device
        2. 7.5.4.2 Protocols for Reading From the Device
          1. 7.5.4.2.1 Legacy, SPI-Compatible (SYS-xy-S) Protocols
          2. 7.5.4.2.2 SPI-Compatible Protocols with Bus Width Options
          3. 7.5.4.2.3 Source-Synchronous (SRC) Protocols
            1. 7.5.4.2.3.1 Output Clock Source Options with SRC Protocols
            2. 7.5.4.2.3.2 Bus Width Options With SRC Protocols
            3. 7.5.4.2.3.3 Output Data Rate Options With SRC Protocols
      5. 7.5.5 Device Setup
        1. 7.5.5.1 Single Device: All multiSPI Options
        2. 7.5.5.2 Single Device: Minimum Pins for a Standard SPI Interface
        3. 7.5.5.3 Multiple Devices: Daisy-Chain Topology
        4. 7.5.5.4 Multiple Devices: Star Topology
    6. 7.6 Register Maps
      1. 7.6.1 Device Configuration and Register Maps
        1. 7.6.1.1 PD_CNTL Register (address = 04h) [reset = 00h]
        2. 7.6.1.2 SDI_CNTL Register (address = 008h) [reset = 00h]
        3. 7.6.1.3 SDO_CNTL Register (address = 0Ch) [reset = 00h]
        4. 7.6.1.4 DATA_CNTL Register (address = 010h) [reset = 00h]
        5. 7.6.1.5 PATN_LSB Register (address = 014h) [reset = 00h]
        6. 7.6.1.6 PATN_MID Register (address = 015h) [reset = 00h]
        7. 7.6.1.7 PATN_MSB Register (address = 016h) [reset = 00h]
        8. 7.6.1.8 OFST_CAL Register (address = 020h) [reset = 00h]
        9. 7.6.1.9 REF_MRG Register (address = 030h) [reset = 00h]
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 ADC Reference Driver
      2. 8.1.2 ADC Input Driver
        1. 8.1.2.1 Charge-Kickback Filter
        2. 8.1.2.2 Input Amplifier Selection
    2. 8.2 Typical Application
      1. 8.2.1 Data Acquisition (DAQ) Circuit for Lowest Distortion and Noise Performance With Differential Input
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 DAQ Circuit With FDA Input Driver and Single-Ended or Differential Input
      3. 8.2.3 Design Requirements
      4. 8.2.4 Detailed Design Procedure
      5. 8.2.5 Application Curves
  9. 9 Power-Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Signal Path
      2. 10.1.2 Grounding and PCB Stack-Up
      3. 10.1.3 Decoupling of Power Supplies
      4. 10.1.4 Reference Decoupling
      5. 10.1.5 Differential Input Decoupling
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 相关链接
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
RVDD to GND –0.3 7 V
DVDD to GND –0.3 7 V
REFIN to REFM –0.3 RVDD + 0.3 V
REFM to GND –0.1 0.1 V
Analog Input (AINP, AINM) to GND –0.3 VREF + 0.3 V
Digital input (RST, CONVST, CS, SCLK, SDI) to GND –0.3 DVDD + 0.3 V
Digital output (READY, SDO-0, SDO-1, SDO-2, SDO-3) to GND –0.3 DVDD + 0.3 V
Analog Input (AINP, AINM) to RVDD and GND –130 130 mA
Operating free-air temperature, TA –40 125 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
RVDD Analog supply voltage (RVDD to AGND) 3 5 5.5 V
DVDD Digital supply voltage (DVDD to AGND) Operating 1.65 3 5.5 V
Specified throughput 2.35 3 5.5
VREF Reference input voltage on REFIN 2.5 RVDD – 0.3 V
CREFBUF External ceramic decoupling capacitor 10 22 µF
RESR External series resistor 0 1 1.3 Ω
TA Specified free-air operating temperature –40 25 125 °C

6.4 Thermal Information

THERMAL METRIC(1) ADS890xB UNITS
RGE (VQFN)
24 PINS
RθJA Junction-to-ambient thermal resistance 31.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 29.9 °C/W
RθJB Junction-to-board thermal resistance 8.9 °C/W
ψJT Junction-to-top characterization parameter 0.3 °C/W
ψJB Junction-to-board characterization parameter 8.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.0 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

At RVDD = 5.5 V, DVDD = 1.65 V to 5.5 V, VREF = 5 V, and maximum throughput (unless otherwise noted).
Minimum and maximum values at TA = –40°C to +125°C; typical values at TA = 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUT
FSR Full-scale input range
(AINP – AINM)		 –VREF VREF V
VIN Absolute input voltage
(AINP and AINM to REFM)		 0 VREF V
VCM Common-mode voltage
(AINP + AINM) / 2		 (VREF / 2) – 0.1 VREF / 2 (VREF / 2) + 0.1 V
CIN Input capacitance Sample mode 60 pF
Hold mode 4 pF
VOLTAGE REFERENCE INPUT (REFIN)
IREF Reference input current VREF = 5 V 0.1 1 µA
CREF Internal capacitance 10 pF
REFERENCE BUFFER OUTPUT (REFBUFOUT)
V(RO) Reference buffer offset voltage
(VREFBUFOUT – VREF)		 With EN_MARG = 0b(1), TA = 25°C(5) –250 250 µV
CREFBUF External ceramic decoupling capacitor 10 22 µF
RESR External series resistor 0 1 1.3 Ω
ISHRT Short-circuit current 30 mA
Margining range With EN_MARG = 1b(1) ±4.5 mV
Margining resolution With EN_MARG = 1b(1) 280 µV
DC ACCURACY(2) (CREFBUF = 22 µF, RESR = 1 Ω)
Resolution 20 Bits
NMC No missing codes 20 Bits
INL Integral nonlinearity(3) TA = 0°C to +60°C -2 ±1 2 ppm(4)
TA = –40°C to +85°C -2.75 ±1 2.75
TA = –40°C to +125°C -3.75 ±1 3.75
DNL Differential nonlinearity(3) -0.5 ±0.2 0.5 ppm(4)
E(IO) Input offset error(3) TA = 25°C(5) -11.5 ±3 11.5 ppm(4)
TA = –40°C to +125°C(5) -60 ±10 60
dVOS/dT Input offset thermal drift(5) 1 μV/°C
GE Gain error(3) EN_MARG = 0b(1)(6) -0.03 ±0.005 0.03 %FSR
dGE/dT Gain error thermal drift EN_MARG = 0b(1)(6) 3.6 ppm/°C
TNS Transition noise 2.3 ppm(4)
First output code deviation for
burst-mode data acquisition		 See Reference Buffer Module –3 3 TNS
CMRR Common-mode rejection ratio dc to 20 kHz 80 dB
SAMPLING DYNAMICS
Aperture delay 4 ns
tj-rms Aperture jitter 2 ps RMS
f3-DB(small) Small-signal bandwidth 23 MHz
AC ACCURACY(2)(7) (CREFBUF = 22 µF, RESR = 1 Ω)
SINAD Signal-to-noise + distortion fIN = 2 kHz, TA = –40°C to +85°C 101.8 103.9 dB
fIN = 2 kHz, TA = –40°C to +125°C 101.3 103.9
SNR Signal-to-noise ratio fIN = 2 kHz, TA = –40°C to +85°C 102 104.5 dB
fIN = 2 kHz, TA = –40°C to +125°C 101.5 104.5
fIN = 100 kHz 99.5
THD Total harmonic distortion fIN = 2 kHz –125 dB
fIN = 100 kHz –110
SFDR Spurious-free dynamic range fIN = 2 kHz 125 dB
LDO OUTPUT (DECAP)
VLDO LDO output voltage
(DECAP pins)		 2.85 V
CLDO External ceramic capacitor on DECAP pins 1 µF
tPU_LDO LDO power-up time CLDO = 1 µF, RVDD > VLDO 1 ms
ISHRT-LDO Short-circuit current 100 mA
DIGITAL INPUTS
VIH High-level input voltage 1.65 V < DVDD < 2.3 V 0.8 DVDD DVDD + 0.3 V
2.3 V < DVDD < 5.5 V 0.7 DVDD DVDD + 0.3
VIL Low-level input voltage 1.65 V < DVDD < 2.3 V –0.3 0.2 DVDD V
2.3 V < DVDD < 5.5 V –0.3 0.3 DVDD
Input current ±0.01 0.1 μA
DIGITAL OUTPUTS
VOH High-level output voltage IOH = 500-µA source 0.8 DVDD DVDD V
VOL Low-level output voltage IOH = 500-µA sink 0 0.2 DVDD V
POWER SUPPLY
IRVDD Analog supply current ADS8900B at RVDD = 5 V, 1-MSPS 4.2 5.8 mA
ADS8902B at RVDD = 5 V, 500-KSPS 3.2 4 mA
ADS8904B at RVDD = 5 V, 250-KSPS 2.8 3.6 mA
Static, no conversion 970 μA
Static, PD_ADC = 1b(8) 900 μA
Static, PD_REFBUF = 1b(8) 120 μA
Static, PD_ADC = 1b and PD_REFBUF = 1b(8) 40 μA
IDVDD Digital supply current DVDD = 3 V, CLOAD = 10 pF, no conversion 1 μA
PRVDD Power dissipation ADS8900B at RVDD = 5 V, 1-MSPS 21 29 mW
ADS8902B at RVDD = 5 V, 500-KSPS 16 20
ADS8904B at RVDD = 5 V, 250-KSPS 14 18
(1) See the REF_MRG Register.
(2) While operating with internal reference buffer and LDO.
(3) See for statistical distribution data for DNL, INL, offset, and gain error parameters.
(4) LSB = least-significant bit. 1 LSB at 20-bit resolution is approximately 0.95 ppm.
(5) For selected VREF, see the OFST_CAL Register.
(6) Includes internal reference buffer errors and drifts.
(7) For VIN = –0.1 dBFS.
(8) See the PD_CNTL Register.

6.6 Timing Requirements

MIN TYP MAX UNIT TIMING DIAGRAM
CONVERSION CYCLE
fcycle Sampling frequency ADS8900B 1000 kHz Figure 1
ADS8902B 500
ADS8904B 250
tcycle ADC cycle-time period ADS8900B 1 µs
ADS8902B 2
ADS8904B 4
twh_CONVST Pulse duration: CONVST high 30 ns
twl_CONVST Pulse duration: CONVST low 30 ns
tacq Acquisition time 300 ns
tqt_acq Quiet acquisition time 30 ns Figure 46, see Data Transfer Protocols
td_cnvcap Quiet aperture time 20 ns
ASYNCHRONOUS RESET, AND LOW POWER MODES
twl_RST Pulse duration: RST low 100 ns Figure 2
SPI-COMPATIBLE SERIAL INTERFACE
fCLK Serial clock frequency 2.35 V ≤ DVDD ≤ 5.5 V,
TA = –40°C to +125°C,
VIH > 0.7 DVDD, VIL < 0.3 DVDD		 70 MHz Figure 3
1.65 V ≤ DVDD < 2.35 V,
TA = –40°C to +125°C,
VIH > 0.8 DVDD, VIL < 0.2 DVDD		 20
1.65 V ≤ DVDD < 2.35 V,
TA = 0°C to +60°C,
VIH > 0.8 DVDD, VIL < 0.2 DVDD		 57
1.65 V ≤ DVDD < 2.35 V,
TA = –40°C to +125°C,
VIH > 0.9 DVDD, VIL < 0.1 DVDD		 68
tCLK Serial clock time period 1/fCLK ns Figure 3
tph_CK SCLK high time 0.45 0.55 tCLK Figure 3
tpl_CK SCLK low time 0.45 0.55 tCLK
tsu_CSCK Setup time: CS falling to the first SCLK capture edge 12 ns
tsu_CKDI Setup time: SDI data valid to the SCLK capture edge 1.5 ns
tht_CKDI Hold time: SCLK capture edge to (previous) data valid on SDI 1 ns
tht_CKCS Delay time: last SCLK falling to CS rising 7 ns
SOURCE-SYNCHRONOUS SERIAL INTERFACE (External Clock)(1)
fCLK Serial clock frequency SDR (DATA_RATE = 0b),
2.35 V ≤ DVDD ≤ 5.5 V		 70 MHz Figure 4, see Data Transfer Protocols
DDR (DATA_RATE = 1b),
2.35 V ≤ DVDD ≤ 5.5 V		 35
tCLK Serial clock time period 1/fCLK ns
(1) The external clock option is not recommended when operating with DVDD < 2.35 V. See Table 9.

6.7 Switching Characteristics

At RVDD = 5.5 V, DVDD = 1.65 V to 5.5 V, VREF = 5 V, and maximum throughput (unless otherwise noted).
Minimum and maximum values at TA = –40°C to +125°C; typical values at TA = 25°C.
PARAMETER MIN TYP MAX UNIT TIMING DIAGRAM
CONVERSION CYCLE
tconv Conversion time ADS8900B 600 670 ns Figure 1
ADS8902B 1100 1200
ADS8904B 2400 2500
ASYNCHRONOUS RESET, AND LOW POWER MODES
td_rst Delay time: RST rising to RVS rising 3 ms Figure 2
tPU_ADC Power-up time for converter module 1 ms See PD_CNTL Register
tPU_REFBUF Power-up time for internal reference buffer, CREFBUF = 22 µF 10 ms
tPU_Device Power-up time for device CLDO = 1 µF, CREFBUF = 22 µF 10 ms
SPI-COMPATIBLE SERIAL INTERFACE
tden_CSDO Delay time: CS falling to data enable 9 ns Figure 3
tdz_CSDO Delay time: CS rising to SDO going to Hi-Z 10 ns
td_CKDO Delay time: SCLK launch edge to (next) data valid on SDO 13 ns
td_CSRDY_f Delay time: CS falling to RVS falling 12 ns Figure 4
td_CSRDY_r Delay time:
CS rising to RVS rising		 After NOP operation 30 ns Figure 4
After WR or RD operation 120
SOURCE-SYNCHRONOUS SERIAL INTERFACE (External Clock)(1)
td_CKSTR_r Delay time: SCLK launch edge to RVS rising 13 ns Figure 4
td_CKSTR_f Delay time: SCLK launch edge to RVS falling 13 ns
toff_STRDO_f Time offset: RVS falling to (next) data valid on SDO -2 2 ns
toff_STRDO_r Time offset: RVS rising to (next) data valid on SDO -2 2 ns
tph_STR Strobe output high time, 2.35 V ≤ DVDD ≤ 5.5 V 0.45 0.55 tSTR
tpl_STR Strobe output low time, 2.35 V ≤ DVDD ≤ 5.5 V 0.45 0.55 tSTR
SOURCE-SYNCHRONOUS SERIAL INTERFACE (Internal Clock)
td_CSSTR Delay time: CS falling to RVS rising 15 50 ns Figure 5
tSTR Strobe output time period INTCLK option 15 ns
INTCLK / 2 option 30
INTCLK / 4 option 60
tph_STR Strobe output high time 0.45 0.55 tSTR
tpl_STR Strobe output low time 0.45 0.55 tSTR
ADS8900B ADS8902B ADS8904B ai_typ_conv_sbas707.gif Figure 1. Conversion Cycle Timing
ADS8900B ADS8902B ADS8904B tim_reset_sbas707.gif Figure 2. Asynchronous Reset Timing
ADS8900B ADS8902B ADS8904B tim_spi_sbas707.gif
1. The SCLK polarity, launch edge, and capture edge depend on the SPI protocol selected.
Figure 3. SPI-Compatible Serial Interface Timing
ADS8900B ADS8902B ADS8904B tim_srcsync-extclk_sbas707.gif Figure 4. Source-Synchronous Serial Interface Timing (External Clock)
ADS8900B ADS8902B ADS8904B tim_srcsync-intclk_sbas707.gif Figure 5. Source-Synchronous Serial Interface Timing (Internal Clock)

6.8 Typical Characteristics

at TA = 25°C, RVDD = 5.5 V, DVDD = 3 V, VREF = 5 V, and maximum-rated throughput (unless otherwise noted)
ADS8900B ADS8902B ADS8904B D001_SBAS728.gif
Typical DNL = ±0.2 ppm
Figure 6. Typical DNL
ADS8900B ADS8902B ADS8904B D007_SBAS728.gif
3250 devices
Figure 8. Typical DNL Distribution (LSB)
ADS8900B ADS8902B ADS8904B D003_SBAS728.gif
Figure 10. DNL vs Temperature
ADS8900B ADS8902B ADS8904B D005_SBAS728.gif
Figure 12. DNL vs Reference Voltage
ADS8900B ADS8902B ADS8904B D019_SBAS728.gif
3250 devices
Figure 14. Typical Offset Distribution (LSB)
ADS8900B ADS8902B ADS8904B D020_SBAS728.gif
REF_SEL[2:0] = 000b
Figure 16. Offset vs Temperature
ADS8900B ADS8902B ADS8904B D023_SBAS728.gif
EN_MARG = 0b
Figure 18. Gain Error vs Temperature
ADS8900B ADS8902B ADS8904B D009_SBAS728.gif
Standard Deviation = 2 ppm
Figure 20. DC Input Histogram
ADS8900B ADS8902B ADS8904B D029_SBAS728.gif
fIN = 2 kHz SNR = 104.5 dB THD = –125 dB
Figure 22. Typical FFT - ADS8902B
ADS8900B ADS8902B ADS8904B D013_SBAS728.gif
fIN = 2 kHz
Figure 24. Noise Performance vs Temperature
ADS8900B ADS8902B ADS8904B D015_SBAS728.gif
fIN = 2 kHz
Figure 26. Noise Performance vs Reference Voltage
ADS8900B ADS8902B ADS8904B D017_SBAS728.gif
Figure 28. Noise Performance vs Input Frequency
ADS8900B ADS8902B ADS8904B D026_SBAS728.gif
Figure 30. Analog Supply Current vs Supply Voltage
ADS8900B ADS8902B ADS8904B D002_SBAS728.gif
Typical INL = ±0.75 ppm
Figure 7. Typical INL
ADS8900B ADS8902B ADS8904B D008_SBAS728.gif
3250 devices
Figure 9. Typical INL Distribution (LSB)
ADS8900B ADS8902B ADS8904B D004_SBAS728.gif
Figure 11. INL vs Temperature
ADS8900B ADS8902B ADS8904B D006_SBAS728.gif
Figure 13. INL vs Reference Voltage
ADS8900B ADS8902B ADS8904B D022_SBAS728.gif
3250 devices
Figure 15. Typical Gain Error Distribution (%FS)
ADS8900B ADS8902B ADS8904B D021_SBAS728.gif
With appropriate REF_SEL[2:0], see OFST_CAL
Figure 17. Offset vs Reference Voltage
ADS8900B ADS8902B ADS8904B D024_SBAS728.gif
EN_MARG = 0b
Figure 19. Gain Error vs Reference Voltage
ADS8900B ADS8902B ADS8904B D011_SBAS728.gif
fIN = 2 kHz SNR = 104.5 dB THD = –125 dB
Figure 21. Typical FFT - ADS8900B
ADS8900B ADS8902B ADS8904B D030_SBAS728.gif
fIN = 2 kHz SNR = 104.5 dB THD = –125 dB
Figure 23. Typical FFT - ADS8904B
ADS8900B ADS8902B ADS8904B D014_SBAS728.gif
fIN = 2 kHz
Figure 25. Distortion Performance vs Temperature
ADS8900B ADS8902B ADS8904B D016_SBAS728.gif
fIN = 2 kHz
Figure 27. Distortion Performance vs Reference Voltage
ADS8900B ADS8902B ADS8904B D018_SBAS728.gif
Figure 29. Distortion Performance vs Input Frequency
ADS8900B ADS8902B ADS8904B D028_SBAS728.gif
RVDD = 5 V
Figure 31. Analog Supply Current vs Temperature