适用于 SiC 和 IGBT 晶体管及电源模块的驱动和保护评估板

(正在供货) UCC21750QDWEVM-025

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Important Note

UCC21750QDWEVM-025 is a prototype evaluation module and is available in limited quantities.

UCC21750 full data sheet, EVM user's guide, and PSpice model are available. Request now

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描述

The UCC21750QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, desat feature based protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation drivers UCC21750 in SOIC-16DW package with 8.0 mm creepage and clearance. The EVM includes SN6505B based isolated DC-DC transformer bias supplies.

特性
  • 10-A peak, split output drive current with programmable drive voltages
  • Two 5.7-kVrms reinforced isolated channels to support up to 1700 V input rail
  • Short circuit protection using desat signal with soft turn OFF and Miller clamp with internal FET
  • Robust noise-immune solution with CMTI > 100 V/ns

包含项目

  • Power modules not included

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器件型号 从德州仪器 (TI) 或第三方购买 状态

UCC21750QDWEVM-025:
Driving and protection evaluation board for SiC and IGBT transistors and power modules

$99.00(USD)


ACTIVE

TI's Standard Terms and Conditions for Evaluation Modules apply.

相关产品

TI 器件 (5)

器件型号 名称 产品系列
SN6505B  SN6505x 用于隔离电源的低噪声 1A 变压器驱动器  隔离 
SN74AHC1G08-Q1  汽车类单路 2 输入正与门  门 
TPS3700  具有 18V 高电源(Vcc 时)的过压和欠压监控电路  电源管理 
TPS709  具有使能端的 150-mA 超低 Iq LDO  电源管理 
UCC21750  适用于 SiC/IGBT 且具有高级保护功能和高 CMTI 的单通道隔离式栅极驱动器  门驱动器 

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